The Motion of Slow Electrons in a Polar Crystal
TL;DR: In this paper, a variational technique was developed to investigate the low-lying energy levels of a conduction electron in a polar crystal, which is equivalent to a simple canonical transformation, and the use of this transformation enables us to obtain the wave functions and energy levels quite simply.
Abstract: A variational technique is developed to investigate the low-lying energy levels of a conduction electron in a polar crystal. Because of the strong interaction between the electron and the longitudinal optical mode of the lattice vibrations, perturbation-theoretic methods are inapplicable. Our variational technique, which is closely related to the "intermediate coupling" method introduced by Tomonaga, is equivalent to a simple canonical transformation. The use of this transformation enables us to obtain the wave functions and energy levels quite simply. Because the recoil of the electron introduces a correlation between the emission of successive virtual phonons by the electron, our approximation, in which this correlation is neglected, breaks down for very strong electron-phonon coupling. The validity of our approximation is investigated and corrections are found to be small for coupling strengths occurring in typical polar crystals.
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TL;DR: In this paper, the authors provide numerical and graphical information about many physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material, including properties of the material itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage.
Abstract: This review provides numerical and graphical information about many (but by no means all) of the physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material. The emphasis is on properties of GaAs itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage. The geometry of the sphalerite lattice and of the first Brillouin zone of reciprocal space are used to pave the way for material concerning elastic moduli, speeds of sound, and phonon dispersion curves. A section on thermal properties includes material on the phase diagram and liquidus curve, thermal expansion coefficient as a function of temperature, specific heat and equivalent Debye temperature behavior, and thermal conduction. The discussion of optical properties focusses on dispersion of the dielectric constant from low frequencies [κ0(300)=12.85] through the reststrahlen range to the intrinsic edge, and on the ass...
2,115 citations
1,446 citations
TL;DR: The electron-phonon interaction in solids is important for many interesting properties of solids, among them the critical temperature of phonon-mediated superconductors, the effective electron mass in metals and semiconductors, and the carrier dynamics in semiconductor devices as discussed by the authors.
Abstract: The electron-phonon interaction in solids is important for many interesting properties of solids, among them the critical temperature of phonon-mediated superconductors, the effective electron mass in metals and semiconductors, and the carrier dynamics in semiconductors. Modern density-functional techniques have made it possible to perform $a\phantom{\rule{0}{0ex}}b$ $i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}o$ calculations of the electron-phonon interaction. This review explains these techniques and discusses their applications.
969 citations
678 citations
TL;DR: In this article, an attempt is made to establish the nature of free charge carriers and of charge carriers bound to centres in p-type NiO, CoO, and MnO and in n-type MnO, α-Fe2O3.
Abstract: In this paper an attempt is made to establish the nature of free charge carriers and of charge carriers bound to centres in p-type NiO, CoO and MnO and in n-type MnO and α-Fe2O3. For free charge carriers, d.c. conductivity, Seebeck coefficient and Hall effect are considered. Effects arising from inhomogeneous conduction and impurity conduction are discussed. Impurity conduction appears to have a strong influence on transport properties in the case of α-Fe2O3, less so in NiO, whereas no influence of this effect has been found in CoO and MnO. It is shown that NiO and CoO do not exhibit the features characteristic of small-polaron conductors but rather can be consistently conceived of as large-polaron band semiconductors. It is suggested that magnetic resistance due to exchange coupling between charge-carrier spin and cation spins plays an important role. The anomalous behaviour of the Hall effect in NiO and α-Fe2O3 is extensively discussed. In contradistinction to NiO, CoO and n-type MnO, free char...
544 citations