Journal ArticleDOI
The Physics of Ferroelectric Memories
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In this article, the authors describe a scenario where they are in the last stages of typing their thesis, the year is 1980, and it's a hot, hazy summer afternoon, a thunderstorm brews on the horizon.Abstract:
Imagine you are in the last stages of typing your thesis, the year is 1980, and it's a hot, hazy summer afternoon, a thunderstorm brews on the horizon. Tense and tired, you have forgotten to save the document on your hard disk. Suddenly, lightning strikes! Your computer shuts down. Your final chapter is lost.read more
Citations
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Journal ArticleDOI
Ferroelectric ceramics : History and technology
TL;DR: Ferroelectric ceramics have been the heart and soul of several multibillion dollar industries, ranging from high-dielectric-constant capacitors to later developments in piezoelectric transducers, positive temperature coefficient devices, and electrooptic light valves as mentioned in this paper.
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Lanthanum-substituted bismuth titanate for use in non-volatile memories
TL;DR: In this paper, the authors show that lanthanum-substituted bismuth titanate (SBT) thin films provide a promising alternative for FRAM applications, since they are fatigue-free on metal electrodes, they can be deposited at temperatures of ∼650°C and their values of Pr are larger than those of the SBT films.
Journal ArticleDOI
Crystal Engineering: from Structure to Function
TL;DR: In this paper, the authors focus on the molecular recognition events during nucleation and growth of a crystal and discover new ways of controlling the internal structure and symmetry of crystals and of producing materials with useful chemical and physical properties.
Journal ArticleDOI
Ferroelectricity in ultrathin perovskite films.
Dillon D. Fong,G. Brian Stephenson,Stephen K. Streiffer,Jeffrey A. Eastman,Orlando Auciello,Paul H. Fuoss,Carol Thompson +6 more
TL;DR: In this paper, a synchrotron x-ray study of lead titanate as a function of temperature and film thickness for films as thin as a single unit cell was performed.
Journal ArticleDOI
The origin of ferroelectricity in magnetoelectric YMnO3.
TL;DR: This work identifies the nature of the ferroelectric phase transition in the hexagonal manganite, YMnO3, using a combination of single-crystal X-ray diffraction, thorough structure analysis and first-principles density-functional calculations, and suggests an avenue for designing novel magnetic ferroelectrics.
References
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Journal ArticleDOI
Domain Formation and Domain Wall Motions in Ferroelectric BaTi O 3 Single Crystals
TL;DR: In this paper, the nucleation and growth of ferroelectric domains in barium titanate have been studied as a function of applied electric field and temperature, and experiments were made on thin single-crystal plates normal to $c$ the polar direction.
Journal ArticleDOI
Fatigue and switching in ferroelectric memories: Theory and experiment
H. M. Duiker,Paul D. Beale,James F. Scott,C. A. Paz De Araujo,B. M. Melnick,J. D. Cuchiaro,Larry D. Mcmillan +6 more
TL;DR: In this article, a theoretical model of fatigue in ferroelectric thin-film memories based upon impact ionization (e.g., Ti+4 to Ti+3 conversion in PbZr1−xTixO3), resulting in dendritic growth of oxygen-deficient filaments, is presented.
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NANO-phase SBT-family ferroelectric memories
TL;DR: In this paper, a review is presented of deposition, switching, and leakage current in these devices, which are small enough to permit 1 Gbit memories on a standard Si chip.
Journal ArticleDOI
High-Permittivity Perovskite Thin Films for Dynamic Random-Access Memories
TL;DR: An important application of ferroelectric films is their incorporation into dynamic random-access memories (DRAMs) as the storage node capacitor dielectric as discussed by the authors, and the steady trend toward higher density has placed severe demands on the device designs.
Journal ArticleDOI
Nanoscale imaging of domain dynamics and retention in ferroelectric thin films
Alexei Gruverman,H. Tokumoto,A. S. Prakash,Sanjeev Aggarwal,Bao Yang,Manfred Wuttig,Ramamoorthy Ramesh,Orlando Auciello,Thirumalai Venkatesan +8 more
TL;DR: In this article, it was shown that polarization reversal occurs under no external field (i.e., loss of remanent polarization) via a dispersive continuous-time random walk process, identified by a stretched exponential decay of the remanent polarities.