Journal ArticleDOI
The physics of Schottky barriers
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A review of the physical processes which determine the height of the barrier and the current-voltage relationship in a metal-semiconductor Schottky barrier is given in this article.Abstract:
A review is given of the physical processes which determine the height of the barrier and the current-voltage relationship in a metal-semiconductor Schottky barrier.read more
Citations
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Journal ArticleDOI
Electrically-Transduced Chemical Sensors Based on Two-Dimensional Nanomaterials
TL;DR: Key advances in the application of 2D materials, from both a historical and analytical perspective, are summarized for four different groups of analytes: gases, volatile compounds, ions, and biomolecules.
Journal ArticleDOI
Solar cell contact resistance—A review
Dieter K. Schroder,D.L. Meier +1 more
TL;DR: An overview of metal-semiconductor contacts on solar cells is presented in this article, including the Schottky approach, Fermi level pinning by surface states, and the mechanisms of thermionic emission, thermionic/field emission, and tunneling for current transport.
Journal ArticleDOI
Schottky-quantum dot photovoltaics for efficient infrared power conversion
Keith Johnston,Andras G. Pattantyus-Abraham,Jason Paul Clifford,S. Myrskog,Dean D. MacNeil,Larissa Levina,Edward H. Sargent +6 more
TL;DR: In this paper, a planar Schottky photovoltaic device was constructed from solution-processed PbS nanocrystal quantum dot films with aluminum and indium tin oxide contacts.
Journal ArticleDOI
Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination
H.C. Card,E.S. Yang +1 more
TL;DR: The dependence of minority carrier lifetime (τ) on the doping concentration N d, grain size d and interface state density N is at the grain boundaries in polycrystalline semiconductors has been calculated analytically as discussed by the authors.
Journal ArticleDOI
Interpreting the nonideal reverse bias c-v characteristics and importance of the dependence of schottky-barrier height on applied voltage
TL;DR: In this paper, an attempt related to the charging behavior of interface states to the nonideal forward bias currentvoltage (I-V) and the reverse bias capacitance-voltage characteristics of AlnSi Schottky barrier diodes was made.
References
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Journal ArticleDOI
The theory of p-n junctions in semiconductors and p-n junction transistors
TL;DR: The theory of potential distribution and rectification for p-n junctions is developed with emphasis on germanium, resulting in an admittance for a simple case varying as (1 + iωτ p )1/2 where τ p is the lifetime of a hole in the n-region.
Journal ArticleDOI
Surface States and Rectification at a Metal Semi-Conductor Contact
TL;DR: In this article, it was shown that if contact is made with a metal, the difference in work function between metal semi-conductor is compensated by surface states charge, rather than by a space charge as is independent of the metal.
Journal ArticleDOI
Surface States and Barrier Height of Metal‐Semiconductor Systems
A. M. Cowley,S. M. Sze +1 more
TL;DR: In this paper, the dependence of the barrier height of metal-semiconductor systems upon the metal work function is derived based on the following assumptions: (1) the contact between the metal and the semiconductor has an interfacial layer of the order of atomic dimensions; it is further assumed that this layer is transparent to electrons with energy greater than the potential barrier but can withstand potential across it.
Journal ArticleDOI
Current transport in metal-semiconductor barriers
C.R. Crowell,S.M. Sze +1 more
TL;DR: In this paper, a theory for calculating the magnitude of majority carrier current flow in metal-semiconductor barriers is developed which incorporates Schottky's diffusion (D) theory and Bethe's thermionic emission (T) theory into a single T-D emission theory, and which includes the effects of the image force.
Journal ArticleDOI
Metal-semiconductor surface barriers
TL;DR: A semi-empirical approach for predicting the type of contact to be expected at an arbitrary metal-semiconductor interface is presented in this paper, where the physical principles underlying the metal-semiconductor barrier are discussed in the light of recent experimental results.