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Journal ArticleDOI

The quantum spin Hall effect and topological insulators

01 Jan 2010-Physics Today (American Institute of Physics)-Vol. 63, Iss: 1, pp 33-38
TL;DR: In topological insulators, spin-orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties as mentioned in this paper, which is called spin−orbit coupling.
Abstract: In topological insulators, spin–orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties.
Citations
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Journal ArticleDOI
TL;DR: Topological superconductors are new states of quantum matter which cannot be adiabatically connected to conventional insulators and semiconductors and are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time reversal symmetry.
Abstract: Topological insulators are new states of quantum matter which cannot be adiabatically connected to conventional insulators and semiconductors. They are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time-reversal symmetry. These topological materials have been theoretically predicted and experimentally observed in a variety of systems, including HgTe quantum wells, BiSb alloys, and Bi2Te3 and Bi2Se3 crystals. Theoretical models, materials properties, and experimental results on two-dimensional and three-dimensional topological insulators are reviewed, and both the topological band theory and the topological field theory are discussed. Topological superconductors have a full pairing gap in the bulk and gapless surface states consisting of Majorana fermions. The theory of topological superconductors is reviewed, in close analogy to the theory of topological insulators.

11,092 citations


Cites background from "The quantum spin Hall effect and to..."

  • ...Adapted from Qi and Zhang, 2010....

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  • ...Adapted from Qi and Zhang, 2010. logical state of quantum matter....

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  • ...These pioneering theoretical and experimental works opened up the exciting field of topological insulators, and the field is now expanding at a rapid pace (Hasan and Kane, 2010; Kane, 2008; Königet al., 2008; Moore, 2009; Qi and Zhang, 2010; Zhang, 2008)....

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  • ...There are a number of excellent reviews on this subject (Hasan and Kane, 2010; Königet al., 2008; Moore, 2009; Qi and Zhang, 2010)....

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Journal ArticleDOI

3,711 citations

Journal ArticleDOI
TL;DR: In this article, a study of the topological insulating Bi2Se3 thin films finds that a gap in these gapless surface states opens up in films below a certain thickness, which suggests that in thicker films, gapless states exist on both upper and lower surfaces.
Abstract: The gapless surface states of topological insulators could enable quantitatively different types of electronic device. A study of the topological insulating Bi2Se3 thin films finds that a gap in these states opens up in films below a certain thickness. This in turn suggests that in thicker films, gapless states exist on both upper and lower surfaces.

1,201 citations


Cites background or methods from "The quantum spin Hall effect and to..."

  • ...The ARPES spectra of 2QL can be well fitted by equation (1)....

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  • ...Table 1 | Parameters of equations (1) and (2) used to fit the bands in Fig....

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  • ...The splitting cannot be obtained with equation (1), and neither by previous first-principles calculation16....

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  • ...The pink dashed lines in b represent the fitted curves using equation (1)....

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  • ...If Ṽ ′ = 0, equation (2) degenerates into equation (1), which corresponds to the 2QL case discussed above....

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Journal ArticleDOI
TL;DR: In this article, the authors derived the low energy effective Hamiltonian involving spin-orbit coupling (SOC) for silicene, which is the analog to the graphene quantum spin Hall effect (QSHE) Hamiltonian.
Abstract: Starting from symmetry considerations and the tight-binding method in combination with first-principles calculation, we systematically derive the low-energy effective Hamiltonian involving spin-orbit coupling (SOC) for silicene. This Hamiltonian is very general because it applies not only to silicene itself but also to the low-buckled counterparts of graphene for the other group-IVA elements Ge and Sn, as well as to graphene when the structure returns to the planar geometry. The effective Hamitonian is the analog to the graphene quantum spin Hall effect (QSHE) Hamiltonian. As in the graphene model, the effective SOC in low-buckled geometry opens a gap at the Dirac points and establishes the QSHE. The effective SOC actually contains the first order in the atomic intrinsic SOC strength ${\ensuremath{\xi}}_{0}$, while this leading-order contribution of SOC vanishes in the planar structure. Therefore, silicene, as well as the low-buckled counterparts of graphene for the other group-IVA elements Ge and Sn, has a much larger gap opened by the effective SOC at the Dirac points than graphene, due to the low-buckled geometry and larger atomic intrinsic SOC strength. Further, the more buckled is the structure, the greater is the gap. Therefore, the QSHE can be observed in low-buckled Si, Ge, and Sn systems in an experimentally accessible temperature regime. In addition, the Rashba SOC in silicene is intrinsic due to its own low-buckled geometry, which vanishes at the Dirac point $K$, while it has a nonzero value with deviation of $\stackrel{P\vec}{k}$ from the $K$ point. Therefore, the QSHE in silicene is robust against the intrinsic Rashba SOC.

1,107 citations

Journal ArticleDOI
06 Aug 2010-Science
TL;DR: In this article, the authors introduced magnetic dopants into the three-dimensional topological insulator dibismuth triselenide (Bi2Se3) to break the time reversal symmetry and further position the Fermi energy inside the gaps by simultaneous magnetic and charge doping.
Abstract: In addition to a bulk energy gap, topological insulators accommodate a conducting, linearly dispersed Dirac surface state. This state is predicted to become massive if time reversal symmetry is broken, and to become insulating if the Fermi energy is positioned inside both the surface and bulk gaps. We introduced magnetic dopants into the three-dimensional topological insulator dibismuth triselenide (Bi2Se3) to break the time reversal symmetry and further position the Fermi energy inside the gaps by simultaneous magnetic and charge doping. The resulting insulating massive Dirac fermion state, which we observed by angle-resolved photoemission, paves the way for studying a range of topological phenomena relevant to both condensed matter and particle physics.

1,000 citations

References
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Journal ArticleDOI
TL;DR: Graphene is converted from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator and the spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.
Abstract: We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts graphene from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator. This novel electronic state of matter is gapped in the bulk and supports the transport of spin and charge in gapless edge states that propagate at the sample boundaries. The edge states are nonchiral, but they are insensitive to disorder because their directionality is correlated with spin. The spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.

6,058 citations

Journal ArticleDOI
TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
Abstract: Measurements of the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field-effect transistor, show that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device. Preliminary data are reported.

5,619 citations

Journal ArticleDOI
15 Dec 2006-Science
TL;DR: In this article, the quantum spin Hall (QSH) effect can be realized in mercury-cadmium telluride semiconductor quantum wells, a state of matter with topological properties distinct from those of conventional insulators.
Abstract: We show that the quantum spin Hall (QSH) effect, a state of matter with topological properties distinct from those of conventional insulators, can be realized in mercury telluride–cadmium telluride semiconductor quantum wells. When the thickness of the quantum well is varied, the electronic state changes from a normal to an “inverted” type at a critical thickness d c . We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss methods for experimental detection of the QSH effect.

5,187 citations

Journal ArticleDOI
TL;DR: The Z2 order of the QSH phase is established in the two band model of graphene and a generalization of the formalism applicable to multiband and interacting systems is proposed.
Abstract: The quantum spin Hall (QSH) phase is a time reversal invariant electronic state with a bulk electronic band gap that supports the transport of charge and spin in gapless edge states. We show that this phase is associated with a novel Z2 topological invariant, which distinguishes it from an ordinary insulator. The Z2 classification, which is defined for time reversal invariant Hamiltonians, is analogous to the Chern number classification of the quantum Hall effect. We establish the Z2 order of the QSH phase in the two band model of graphene and propose a generalization of the formalism applicable to multiband and interacting systems.

4,973 citations

Journal ArticleDOI
TL;DR: In this article, the authors describe the mathematical underpinnings of topological quantum computation and the physics of the subject are addressed, using the ''ensuremath{ u}=5∕2$ fractional quantum Hall state as the archetype of a non-Abelian topological state enabling fault-tolerant quantum computation.
Abstract: Topological quantum computation has emerged as one of the most exciting approaches to constructing a fault-tolerant quantum computer. The proposal relies on the existence of topological states of matter whose quasiparticle excitations are neither bosons nor fermions, but are particles known as non-Abelian anyons, meaning that they obey non-Abelian braiding statistics. Quantum information is stored in states with multiple quasiparticles, which have a topological degeneracy. The unitary gate operations that are necessary for quantum computation are carried out by braiding quasiparticles and then measuring the multiquasiparticle states. The fault tolerance of a topological quantum computer arises from the nonlocal encoding of the quasiparticle states, which makes them immune to errors caused by local perturbations. To date, the only such topological states thought to have been found in nature are fractional quantum Hall states, most prominently the $\ensuremath{ u}=5∕2$ state, although several other prospective candidates have been proposed in systems as disparate as ultracold atoms in optical lattices and thin-film superconductors. In this review article, current research in this field is described, focusing on the general theoretical concepts of non-Abelian statistics as it relates to topological quantum computation, on understanding non-Abelian quantum Hall states, on proposed experiments to detect non-Abelian anyons, and on proposed architectures for a topological quantum computer. Both the mathematical underpinnings of topological quantum computation and the physics of the subject are addressed, using the $\ensuremath{ u}=5∕2$ fractional quantum Hall state as the archetype of a non-Abelian topological state enabling fault-tolerant quantum computation.

4,457 citations