The structural and luminescence properties of porous silicon
TL;DR: A large amount of work world wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si as mentioned in this paper, and the key importance of crystalline Si nanostructures in determining the behaviour of porous si is highlighted.
Abstract: A large amount of work world-wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si. Much progress has been made following the demonstration in 1990 that highly porous material could emit very efficient visible photoluminescence at room temperature. Since that time, all features of the structural, optical and electronic properties of the material have been subjected to in-depth scrutiny. It is the purpose of the present review to survey the work which has been carried out and to detail the level of understanding which has been attained. The key importance of crystalline Si nanostructures in determining the behaviour of porous Si is highlighted. The fabrication of solid-state electroluminescent devices is a prominent goal of many studies and the impressive progress in this area is described.
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TL;DR: In this article, the authors present methods of severe plastic deformation and formation of nanostructures, including Torsion straining under high pressure, ECA pressing, and multiple forging.
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1,762 citations
TL;DR: The current status of the use of nanoparticles for photothermal treatments is reviewed in detail, paying special attention to the physical mechanisms at the root of the light-to-heat conversion processes.
Abstract: The current status of the use of nanoparticles for photothermal treatments is reviewed in detail. The different families of heating nanoparticles are described paying special attention to the physical mechanisms at the root of the light-to-heat conversion processes. The heating efficiencies and spectral working ranges are listed and compared. The most important results obtained in both in vivo and in vitro nanoparticle assisted photothermal treatments are summarized. The advantages and disadvantages of the different heating nanoparticles are discussed.
1,441 citations
TL;DR: The photoluminescence properties of porous silicon have attracted considerable research interest since their discovery in 1990 as discussed by the authors, which is due to excitonic recombination quantum confined in Si nanocrystals which remain after the partial electrochemical dissolution of silicon.
1,261 citations
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TL;DR: Proton beam (p-beam) writing as discussed by the authors is a direct writing process that uses a focused beam of MeV protons to pattern resist material at nanodimensions, which is similar in many ways to direct writing using electrons.
1,074 citations
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TL;DR: In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract: Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.
7,393 citations
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01 Jan 1971TL;DR: Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)
Abstract: Optical processes in semiconductors , Optical processes in semiconductors , مرکز فناوری اطلاعات و اطلاع رسانی کشاورزی
4,630 citations
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01 Jun 1977
TL;DR: Hirsch et al. as mentioned in this paper described further experiments on the preparation of thin film sections of embedded Backscatter Kikuchi diffraction in the SEM for identification of crystallographic thin films by electron microscopy.
Abstract: In continuation of an earlier publication (Hoppe et al., 1968), further experiments are described here on the preparation of thin film sections of embedded Backscatter Kikuchi diffraction in the SEM for identification of crystallographic thin films by electron microscopy Peter B. Hirsch, Electron Works by Peter B. Hirsch: Electron Microscopy of Thin Crystals Peter B. Hirsch Author of Electron Microscopy of Thin Crystals
4,077 citations