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Journal ArticleDOI

Theoretical analysis of planar bulk-acoustic-wave response

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TLDR
The theory is used to optimize one of these devices by varying the thickness and interdigital transducer (IDT) separation so as to give minimum insertion loss, and also to find a new BAW device with low insertion loss.
Abstract
A detailed theoretical analysis for planar bulk-acoustic-wave (BAW) devices that results in a method for computing the bulk-acoustic-wave response for any orientation of any piezoelectric substrate is presented. The BAW responses for four devices is computed and are found to be in excellent agreement with published experimental results. The theory is used to optimize one of these devices by varying the thickness and interdigital transducer (IDT) separation so as to give minimum insertion loss. A similar optimization can be performed for other devices. The theory is also used to find a new BAW device with low insertion loss. >

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Proceedings ArticleDOI

Reducing AC impedance measurement errors caused by the DC voltage dependence of broadband high-voltage bias-tees

TL;DR: A bias-tee has been developed with a voltage-independent capacitor, suitable for DC voltages up to 500 V showing excellent performance up to several gigahertz, and a calibration technique with applied bias significantly improves the measurement accuracy.
References
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Proceedings ArticleDOI

Spurious Bulk Wave Signals in Acoustic Surface Wave Devices

R.F. Mitchell
TL;DR: A review of the available theoretical and experimental data on bulk wave radiation from surface wave devices and some of the techniques available for controlling or reducing its effect on device performance is given in this article.
Proceedings ArticleDOI

New Low Loss High Coupling Mode Up to 1 GHz on LiNbO 3

TL;DR: In this paper, a low-loss, high-coupling mode whose insertion loss is less than the Rayleigh-type surface acoustic wave was found, and the experimentally determined coupling (v/v) for this mode is almost a factor of three times that of the SAW.
Journal ArticleDOI

Residual Bulk Mode Levels in (YXl)128° LiNbO 3

TL;DR: In this article, the authors describe a transport d'energetic en mode de volume entre transducteurs interdigiteux sur un parallelepipede de LiNbO 3.
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