Theory of continuously distributed trap states at Si‐SiO2 interfaces
01 Apr 1981-Journal of Applied Physics (American Institute of Physics)-Vol. 52, Iss: 4, pp 2889-2896
TL;DR: In this article, a method to calculate the energy level of trap states between amorphous SiO2 and the Si substrate with (111) orientation was proposed. But the method was not applied to the case of SiO 2 interfaces with or without microstructural defects.
Abstract: A calculation method to treat the electronic structures of crystalline Si‐amorphous SiO2 interfaces with or without microstructural defects is developed based on semiempirical tight‐binding Hamiltonians and the Green’s function formulation, and applied for calculation of the energy level of the trap states between amorphous SiO2 and the Si substrate with (111) orientation. The major results are (i) the perfect interface does not have any states in the forbidden gap of Si although the Si‐O‐Si bonding angle at the interface is varied in the range between 120° and 180°, and neither does the interface with oxygen dangling bonds have any; (ii) trap states due to a Si dangling bond appear at about the middle of the Si band gap; and (iii) O‐vacancy and Si‐Si weak bonds at the interface produce trap states at the energy range higher than the midgap, whereas Si‐O weak bonds at the interface produces trap states at the energy range lower than the midgap. The energy level of these trap states varies with changing bo...
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TL;DR: In this article, a characteristic interface trap was observed in a hole trapping experiment when electrons were captured by trapped holes injected by an avalanche in the silicon, which could be explained by the generation of new electronic states through relaxation of strained bonds which were proposed to be the origin of hole traps.
Abstract: A characteristic interface trap was observed in a hole trapping experiment when electrons were captured by trapped holes injected by an avalanche in the silicon. The observations could be explained by the generation of new electronic states through relaxation of strained bonds which were proposed to be the origin of hole traps. The result is either a weak bond in the network or two dangling bonds with no net charge. The weak bond or dangling bonds give rise to neutral traps in the bulk and interface traps at the interface of the oxide. The presence of interface traps for such defects at the interface is predicted by theoretical calculations.
454 citations
TL;DR: In this article, the effect of postoxide-growth fluorine incorporation in gate dielectrics is reported, and it is explained by a model wherein fluorine bonds to silicon, and the displaced oxygen grows the additional oxide.
Abstract: The effect of post-oxide-growth fluorine incorporation in gate dielectrics is reported. Fluorine was introduced through ion implantation into polysilicon and diffused into the gate oxide, as indicated by SIMS measurements. No great decrease in the breakdown field was observed, although a decrease in charge-to-breakdown was seen. Interface characteristics also improved with medium to high doses of fluoride. High doses were found to grow additional oxide. NMOS FETs showed increased immunity to hot-electron-induced stress. These results are explained by a model wherein fluorine bonds to silicon, and the displaced oxygen grows the additional oxide. >
262 citations
Book•
24 Jul 2007
TL;DR: Low-frequency noise in advanced CMOS devices is discussed in this paper, where the authors describe the fundamental noise sources and basic circuit analysis, and give useful practical advice for low frequency noise.
Abstract: Low-Frequency Noise in Advanced CMOS Devices begins with an introduction to noise, describing the fundamental noise sources and basic circuit analysis. The characterization of low-frequency noise is discussed in detail and useful practical advice is given. The various theoretical and compact low-frequency (1/f) noise models in MOS transistors are treated extensively providing an in-depth understanding of the low-frequency noise mechanisms and the potential sources of the noise in MOS transistors. Advanced CMOS technology including nanometer scaled devices, strained Si, SiGe, SOI, high-k gate dielectrics, multiple gates and metal gates are discussed from a low-frequency noise point of view. Some of the most recent publications and conference presentations are included in order to give the very latest view on the topics. The book ends with an introduction to noise in analog/RF circuits and describes how the low-frequency noise can affect these circuits.
217 citations
Cites background from "Theory of continuously distributed ..."
...The effective electric field is increased by a reverse substrate bias (and increasing gate voltage overdrive), which results in a decrease in the ( ) i d Si eff Q η Q ε E + = 1 (3-66)...
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...(3-59) and increases markedly at large inversion carrier densities....
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...(3-63) somewhat and assume that the Hooge parameter is proportional to the overall phonon scattering rate....
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...10 N f L NOIA I kT S ef eff eff W D wi (3-73)...
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...(3-72) ensures continuity between the 1/ noise equations in the two regions of operation....
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TL;DR: In this article, the authors present the present status and historical development of electron spin resonance (ESR) application to the Si/SiO 2 system, and include a background of relevant ESR research on other materials systems.
167 citations
TL;DR: In this article, the authors compared the generation of radiation-induced Pb (trivalent silicon) centers at the Si/SiO2 interface with the radiationinduced buildup of interface states.
Abstract: We have compared the generation of radiation‐induced Pb (‘‘trivalent silicon’’) centers at the Si/SiO2 interface with the radiation‐induced buildup of interface states. We observe a strong correlation between the density of Pb centers and radiation‐induced interface state density (Dit) and similar annealing behavior of radiation‐induced Pb and Dit. Furthermore, the Pb resonance intensity is strongly bias dependent; this indicates that the charge state of the Pb defect is bias dependent. We conclude that Pb defects account for a very large portion of radiation‐induced interface states.
163 citations
References
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TL;DR: In this article, the selfconsistent field function for atoms with 2 to 36 electrons is computed with a minimal basis set of Slater-type orbitals, and the orbital exponent of the atomic orbitals are optimized as to ensure the energy minimum.
Abstract: The self‐consistent‐field function for atoms with 2 to 36 electrons are computed with a minimal basis set of Slater‐type orbitals. The orbital exponent of the atomic orbitals are optimized as to ensure the energy minimum. The analysis of the optimized orbital exponents allows us to obtain simple and accurate rules for the 1s, 2s, 3s, 4s, 2p, 3p, 4p, and 3d electronic screening constants. These rules are compared with those proposed by Slater and reveal the need of accounting for the screening due to the outside electrons. The analysis of the screening constants (and orbital exponents) is extended to the excited states of the groundstate configuration and to the positive ions.
2,135 citations
TL;DR: In this paper, a new study of the structure of vitreous silica has been made under greatly improved conditions, using Rh Kα radiation with the method of fluorescence excitation, reliable intensity values were measured to 4π sinθ/λ = 20.
Abstract: A new study of the structure of vitreous silica has been made under greatly improved conditions. Using Rh Kα radiation with the method of fluorescence excitation, reliable intensity values were measured to 4π sinθ/λ = 20. The interpretation was in terms of pair functions, thereby eliminating the approximations in earlier work. Each silicon is tetrahedrally surrounded by 4 oxygen atoms, with a Si–O distance which is closely 1.62 A. Each oxygen atom is bonded to 2 silicon atoms. The Si–O–Si bond angle α shows a distribution V(α) extending all the way from 120° to 180°, with a maximum at α = 144°. This wide variation in α is an important distinction between the vitreous and the crystalline forms of silica, and it furnishes an important criterion for any proposed model of vitreous silica. Good agreement with the measured pair function distribution curve was obtained by assuming a random orientation about the Si–O bond directions. The interpretation leads to the familiar random network model, but with the new results the model is more precise.
1,147 citations
PARC1
TL;DR: In this article, the electronic structures of C, Si, Ge, $\ensuremath{\alpha}\ensure-math{-}\mathrm{Sn}$, GaP, GaAs, GaSb, InP, InAs, InSb and ZnSe are studied using a tight-binding approach which includes spin-orbit interactions.
Abstract: The electronic structures of C, Si, Ge, $\ensuremath{\alpha}\ensuremath{-}\mathrm{Sn}$, GaP, GaAs, GaSb, InP, InAs, InSb, and ZnSe are studied using a tight-binding approach which includes spin-orbit interactions. The spin-orbit splittings ${\mathrm{\ensuremath{\Delta}}}_{0}$ and ${\mathrm{\ensuremath{\Delta}}}_{1}$ are related to atomic spin-orbit splittings and optical gaps. The variation of ${\mathrm{\ensuremath{\Delta}}}_{0}$ as a function of chemical composition is studied for a number of alloy systems. It is shown that the nonlinear dependence of ${\mathrm{\ensuremath{\Delta}}}_{0}$ on alloy composition is a disorder-induced effect. The bowing parameter is calculated in terms of tight-binding parameters and band gaps.
375 citations
TL;DR: In this article, Valence Orbital Ionization Potentials (VOIPs) for the elements H through Kr in various configurations and for many states of ionization were reported, for the lighter elements the isoelectronic series were fitted to a quadratic equation, VOIP (q)=Aq2 + Bq+C.
Abstract: Average Energy of Configuration. Valence Orbital Ionization Potentials (VOIPs) are reported for the elements H through Kr in various configurations and for many states of ionization. For the lighter elements the isoelectronic series are fitted to a quadratic equation, VOIP (q)=Aq
2 + Bq+C. The significance of the A, B, and C parameters is discussed.
298 citations
TL;DR: RefReflectance data for crystalline and fused quartz are presented and analyzed for the energy range to 26 eV. The curves are very similar for each form of SiO2 suggesting the importance of localized effects in determining these optical properties as mentioned in this paper.
159 citations