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Open AccessJournal ArticleDOI

Theory of the field-effect mobility in amorphous organic transistors

M. C. J. M. Vissenberg, +2 more
- 15 May 1998 - 
- Vol. 57, Iss: 20, pp 12964-12967
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TLDR
In this paper, the field effect mobility in an organic thin-film transistor was studied theoretically. And the authors applied the theory to describe the experiments by Brown et al. on solution-processed amorphous organic transistors, made from polythienylene vinylene and from a small molecule (pentacene).
Abstract
The field-effect mobility in an organic thin-film transistor is studied theoretically. From a percolation model of hopping between localized states and a transistor model an analytic expression for the field-effect mobility is obtained. The theory is applied to describe the experiments by Brown et al. [Synth. Met. 88, 37 (1997)] on solution-processed amorphous organic transistors, made from a polymer (polythienylene vinylene) and from a small molecule (pentacene). Good agreement is obtained, with respect to both the gate voltage and the temperature dependence of the mobility.

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Citations
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Journal ArticleDOI

Device Physics of Solution‐Processed Organic Field‐Effect Transistors

TL;DR: In this article, the materials, charge-transport, and device physics of solution-processed organic field-effect transistors are reviewed, focusing in particular on the physics of the active semiconductor/dielectric interface.
Journal ArticleDOI

Highly efficient organic devices based on electrically doped transport layers.

TL;DR: Most present-day semiconductor devices use inorganic crystalline materials, with single-crystalline silicon dominating other materials like GaAs by about a factor of 1000, but organic semiconductors have recently gained much attention and are already broadly applied as photoconductors for copiers and laser printers.
Journal ArticleDOI

Organic thin-film transistors.

TL;DR: A critical review provides a short summary of several important aspects of organic transistors, including materials, microstructure, carrier transport, manufacturing, electrical properties, and performance limitations.
PatentDOI

Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates

TL;DR: In this paper, a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, is used to provide a semiconductor channel exhibiting improved electronic properties relative to conventional nanotube-based electronic systems.
References
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Book

Electronic processes in non-crystalline materials

TL;DR: The Fermi Glass and the Anderson Transition as discussed by the authorsermi glass and Anderson transition have been studied in the context of non-crystalline Semiconductors, such as tetrahedrally-bonded semiconductors.
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