Thickness and Annealing Effects on the Thermoelectric Properties of P-type Bi 0.5 Sb 1.5 Te 3 Thin Films
01 Jan 2004-Korean Journal of Materials Research (The Materials Research Society of Korea)-Vol. 14, Iss: 1, pp 41-45
About: This article is published in Korean Journal of Materials Research.The article was published on 2004-01-01 and is currently open access. It has received None citations till now. The article focuses on the topics: Thermoelectric effect & Annealing (metallurgy).
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TL;DR: In this article, thermally grown SiO2 overlayers (SiO2/Si substrates) with flash evaporation on silicon wafers were determined in the temperature range from 80 to 400 K. Their transport properties, i.e., electrical conductivity, Hall coefficient, magnetoresistance coefficient, Hall mobility, Seebeck coefficient, thermal conductivity and thermoelectric figure of merit, were determined.
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TL;DR: In this article, a thin film thermoelectric cooling device based on the Peltier effect was fabricated using a p-Sb2Te3−n-Bi2Te-3 thin-film thermocouple, and the observed values of maximum temperature difference (T ) between the hot (Th) and cold end (Tc) for a single-stage device is about 13 K, whereas that for a two-stage cascade arrangement is about 19 K.
Abstract: Thin film thermoelectric cooling devices based on the Peltier effect are fabricated using a p-Sb2Te3−n-Bi2Te3 thin film thermocouple. The observed values of maximum temperature difference ( ‡T ) between the hot (Th) and cold end (Tc) for a single-stage device is about 13 K, whereas that for a two-stage cascade arrangement is about 19 K. The figure of merit of these thermocouples is calculated and the implications are discussed.
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TL;DR: In this article, the size dependence of thermoelectric power and electrical resistivity have been analyzed by the effective mean free path model of size effect, and it is found that both the thermoeellectric powers and the electrical resistivities are linear functions of the reciprocal of thickness of the films.
Abstract: Crystalline Sb2Te3 thin films of different thicknesses have been prepared by subsequent annealing (at 500 K) of vacuum deposited, as‐grown, amorphous thin films of Sb2Te3 prepared on glass substrates at room temperature. Thermoelectric power and electrical resistivity of these annealed (crystalline) films have been determined as a function of temperature. The size dependence of thermoelectric power and electrical resistivity have been analyzed by the effective mean free path model of size effect. It is found that both the thermoelectric power and the electrical resistivity are linear functions of the reciprocal of thickness of the films. The data from the analyses of thermoelectric power and electrical resistivity have been combined to evaluate important material parameters such as carrier concentration, their mean free path, Fermi energy, and effective mass. The values of some of these are compared with the previous available values from literature.
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