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Journal ArticleDOI

Thickness and temperature dependence of electrical properties of semiconducting (Bi0.75Sb0.25)2Te3 thin films

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TLDR
In this paper, the thickness dependence of electrical resistivity has been analyzed using the effective mean free path model and important material constants like the mean free-path and the electron concentration have been evaluated.
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This article is published in Solid State Communications.The article was published on 1998-05-01. It has received 7 citations till now. The article focuses on the topics: Electrical resistivity and conductivity & Atmospheric temperature range.

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Journal ArticleDOI

Comparative study of the electrochemical preparation of Bi2Te3, Sb2Te3, and (BixSb1−x)2Te3 films

TL;DR: In this article, the processes associated with the electrodeposition of bismuth antimony telluride thermoelectric films, were reported along with an analysis of the composition and crystallinity of the resulting films.
Journal ArticleDOI

Thermal Analysis by Electrical Resistivity Measurement

TL;DR: In this article, the authors present a review of thermal analysis in the form of electrical resistivity measurement for phase transitions and electrical conduction mechanisms, where the resistivity can be the volume resistivity or the contact resistivity.
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Influence of direct current plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper films

TL;DR: In this article, the influence of direct current (DC) plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper (Cu) thin films coated on silicon substrates was investigated by means of surface profilometer, four point probe and atomic force microscopy.
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Electrical Conductivity Enhancement of PTFE (Teflon) Induced by Homogeneous Low Voltage Electron Beam Irradiation (HLEBI)

TL;DR: In this paper, a homogeneous low potential electron beam irradiation (HLEBI) was used to increase the electrical conductivity of PTFE (Teflon) by more than two orders of magnitude.
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Large grain size dependence of resistance of polycrystalline films

Abstract: A qualitative behavior of grain size dependent resistance of polycrystalline films has been worked out by extending the earlier model (Volger's model) for polycrystalline films. Growth of grain size is considered to be accompanied with a decrease in the number of grains present. The variation of the number of grains is restricted along one direction at a time, assuming it to be constant along the other two directions, to simplify the problem. Combining the results along film thickness and film length, the calculated resistance versus grain size shows a family of curves. These curves can be used to know the growth direction by comparing the measured grain size dependence of the resistance.
References
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Book

Elements of X-ray diffraction

TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI

Thermoelectric properties of (BixSb1−x)2Te3 single crystal solid solutions grown by the T.H.M. method

TL;DR: In this article, single crystal solid solutions with compositions Bi 8 Sb 32 Te 60, Bi 9 Sb 31 Te 60 and Bi 10 Sb 30 Te 60 were grown using the Traveling Heater Method (T.H.M.).
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