Journal ArticleDOI
Thin-layer black phosphorus/GaAs heterojunction p-n diodes
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TLDR
In this article, the p-n heterojunction diodes with thin black phosphorus layers are interfaced with an underlying, highly n-doped GaAs substrate, and the observed maximum open circuit voltage of 0.6 V is consistent with the band gap estimated for a black phosphorus sheet with a thickness on the order of 10nm.Abstract:
Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorus emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction diodes wherein thin black phosphorus layers are interfaced with an underlying, highly n-doped GaAs substrate. The p-n heterojunctions exhibit close-to-ideal diode behavior at low bias, while under illumination they display a photoresponse that is evenly distributed over the entire junction area, with an external quantum efficiency of up to 10% at zero bias. Moreover, the observed maximum open circuit voltage of 0.6 V is consistent with the band gap estimated for a black phosphorus sheet with a thickness on the order of 10 nm. Further analysis reveals that the device performance is limited by the structural quality of the black phosphorus surface.read more
Citations
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Black Phosphorus: Narrow Gap, Wide Applications
TL;DR: The recent isolation of atomically thin black phosphorus by mechanical exfoliation of bulk layered crystals has triggered an unprecedented interest, even higher than that raised by the first works on graphene and other two-dimensionals, in the nanoscience and nanotechnology community.
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Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene
TL;DR: A comprehensive review on the applications of 2D-layered semiconductors as photodetectors, including photoconductors, phototransistors, and photodiodes, reported in the past five years is presented in this paper.
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2D phosphorene as a water splitting photocatalyst: fundamentals to applications
TL;DR: In this article, the fundamental electronic, optical and chemical properties of 2D phosphorene and its suitability as a metal-free water splitting photocatalyst are assessed and compared against claims from environmental antagonists.
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van der Waals Layered Materials: Opportunities and Challenges
TL;DR: The vdW materials library, technology relevance, and specialties of vdw materials covering the vdD interaction, strong Coulomb interaction, layer dependence, dielectric screening engineering, work function modulation, phase engineering, heterostructures, stability, growth issues, and the remaining challenges are reviewed.
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Black phosphorus nanostructures: recent advances in hybridization, doping and functionalization
TL;DR: This tutorial review summarizes the recent advances of BP nanostructures and outlines the future challenges and opportunities.
References
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TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
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TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
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A roadmap for graphene
Kostya S. Novoselov,Vladimir I. Fal'ko,Luigi Colombo,Paul Gellert,M. G. Schwab,Kyoung-Soo Kim +5 more
TL;DR: This work reviews recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.
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Black phosphorus field-effect transistors
Likai Li,Yijun Yu,Guo Jun Ye,Q. Q. Ge,Xuedong Ou,Hua Wu,Donglai Feng,Xianhui Chen,Yuanbo Zhang +8 more
TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
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Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.