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Third-generation infrared photodetector arrays
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TLDR
In this paper, fundamental and technological issues associated with the development and exploitation of third-generation IR photon detectors are discussed, and the most recently developed focal plane arrays based on type-II strained-layer superlattices and quantum dot IR photodetectors are considered.Abstract:
Hitherto, two distinct families of multielement detector arrays have been used for infrared (IR) imaging system applications: linear arrays for scanning systems (first generation) and two-dimensional arrays for staring systems (second generation). Nowadays, third-generation IR systems are being developed which, in the common understanding, provide enhanced capabilities such as larger numbers of pixels, higher frame rates, better thermal resolution, multicolor functionality, and/or other on-chip signal-processing functions. In this paper, fundamental and technological issues associated with the development and exploitation of third-generation IR photon detectors are discussed. In this class of detectors the two main competitors, HgCdTe photodiodes and quantum-well photoconductors, are considered. This is followed by discussions focused on the most recently developed focal plane arrays based on type-II strained-layer superlattices and quantum dot IR photodetectors. The main challenges facing multicolor devi...read more
Citations
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High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm.
Xiong Gong,Minghong Tong,Yangjun Xia,Wanzhu Cai,Ji Sun Moon,Yong Cao,Gang Yu,Chan-Long Shieh,Boo Nilsson,Alan J. Heeger +9 more
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Single-photon detectors for optical quantum information applications
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References
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Journal ArticleDOI
Multidimensional quantum well laser and temperature dependence of its threshold current
Yasuhiko Arakawa,H. Sakaki +1 more
TL;DR: In this paper, a new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D), and the effects of such confinements on the lasing characteristics are analyzed.
Journal ArticleDOI
Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
TL;DR: In this paper, the 2D-3D growth mode transition during the initial stages of growth of highly strained InGaAs on GaAs is used to obtain quantum-sized dot structures.
Journal ArticleDOI
Quantum‐well infrared photodetectors
TL;DR: The literature on quantum-well infrared photodetectors (QWIPs) is reviewed in this paper, where a detailed discussion is given on the device physics of the intersubband absorption and hot-carrier transport processes for individual detectors, as well as the high performance which has been achieved for large staring arrays.
Journal ArticleDOI
HgCdTe infrared detector material: history, status and outlook
TL;DR: A review of the history, the present status and possible future developments of HgCdTe ternary alloy for infrared (IR) detector applications is presented in this article.