TIPS-Pentacene:PS Blend Organic Field-Effect Transistors with Hybrid Gate Dielectric on Paper Substrate
01 Apr 2019-
TL;DR: In this paper, a bottom gate top contact organic field effect transistors with hybrid gate dielectric and TIPS-Pentacene:PS blend as active layer on PowerCoat™ HD 230 paper substrate is reported.
Abstract: We report on the fabrication of bottom gate top contact organic field effect transistors with hybrid gate dielectric and TIPS-Pentacene:PS blend as active layer on PowerCoat™ HD 230 paper substrate. The hybrid dielectric layer leads the devices operated at relatively low voltage of −10 V with avg. and maximum field effect mobility of $0.52(\pm 0.16)$ and 0.78 cm2 V−1 S−1 respectively, with near zero threshold voltage and on-off current ratio approaching ~104. The devices have shown excellent operational stability when tested with DC bias stress of $\mathrm{V}_{\mathrm{DS}}=\mathrm{V}_{\mathrm{GS}}=-10\ \mathrm{V}$ for 1 h and minuscule changes in electrical characteristics were observed with continuous multiple transfer cycle scans. In addition, we have demonstrated a resistive load inverter circuit with varying the load resistance with these paper OFETs.
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TL;DR: In this paper , a review summarizes the deposition principles and control parameters of each deposition method for pentacene and its derivatives, and also provides a comparison of each method to provide recommendations for specific device applications.
Abstract: Pentacene is a well-known conjugated organic molecule with high mobility and a sensitive photo response. It is widely used in electronic devices, such as in organic thin-film transistors (OTFTs), organic light-emitting diodes (OLEDs), photodetectors, and smart sensors. With the development of flexible and wearable electronics, the deposition of good-quality pentacene films in large-scale organic electronics at the industrial level has drawn more research attention. Several methods are used to deposit pentacene thin films. The thermal evaporation technique is the most frequently used method for depositing thin films, as it has low contamination rates and a well-controlled deposition rate. Solution-processable methods such as spin coating, dip coating, and inkjet printing have also been widely studied because they enable large-scale deposition and low-cost fabrication of devices. This review summarizes the deposition principles and control parameters of each deposition method for pentacene and its derivatives. Each method is discussed in terms of experimentation and theory. Based on film quality and device performance, the review also provides a comparison of each method to provide recommendations for specific device applications.
7 citations
References
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TL;DR: This study of electro-mechanical properties suggests that solution-processable organic semiconductors are suitable for applications in flexible electronics, provided that integration with other important technological advances, such as device scalability and low-voltage operation, is achieved in the future.
Abstract: Organic electronic materials are promising candidates for applications in which flexible electronic devices are required. Yi et al. demonstrate a high-performance, flexible organic transistor based on solution-processed small molecules that can be fabricated with a simple, low-cost process.
270 citations
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TL;DR: In this article, the first flexible, even rollable, quarter video graphics array (QVGA) active matrix displays based on organic semiconductors have been reported, which are used in the field of large-area electronics where numerous devices are integrated on low-cost substrates such as plastics.
Abstract: Progress in environmental stability and processability, and the increase of the field-effect mobility of organic semiconductors has triggered their use as the active element in microelectronic devices. The advantages of their application are the easy processing, for example, spin-coating and ink-jet printing, without a temperature hierarchy, and their mechanical flexibility. Applications are foreseen in the field of large-area electronics where numerous devices are integrated on low-cost substrates such as plastics. The first flexible, even rollable, quarter video graphics array (QVGA) active matrix displays based on organic semiconductors have already been reported.[1]
211 citations
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TL;DR: In this paper, a solution processed n-channel organic field effect transistors based on [6,6]-phenyl C61 butyric acid methyl ester with high mobility and low contact resistance are reported.
Abstract: Solution processed n-channel organic field-effect transistors based on [6,6]-phenyl C61 butyric acid methyl ester with high mobility and low contact resistance are reported. Ca, Au, or Ca capped with Au (Ca/Au) was used as the top source/drain electrodes. The devices with Ca electrodes exhibit excellent n-channel behavior with electron mobility values of 0.12 cm2/V s, low threshold voltages (∼2.2 V), high current on/off ratios (105–106) and subthreshold slopes of 0.7 V/decade. By varying the channel lengths (25–200 μm) in devices with different metal/semiconductor interfaces, the effect of channel length scaling on mobility is studied and the contact resistance is extracted. The width-normalized contact resistance (RCW) for Au (12 kΩ cm) is high in comparison to Ca (7.2 kΩ cm) or Ca/Au (7.5 kΩ cm) electrodes at low gate voltage (VGS=10 V). However, in the strong accumulation regime at high gate voltage (VGS=30 V), its value is nearly independent of the choice of metal electrodes and in a range of 2.2–2.6 kΩ cm. These devices show stable electrical behavior under multiple scans and low threshold voltage instability under electrical bias stress (VDS=VGS=30 V, 1 h) in N2 atmosphere.
40 citations
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TL;DR: Flexible organic field effect transistors (OFETs) with TIPS-pentacene: polystyrene (PS) blend are demonstrated to exhibit enhanced mobility and significantly improved electrical stability compared to neat TIPS pentacene on poly(4-vinylphenol) (PVP) dielectric (bi-layer OFETs), along with high mechanical stability.
Abstract: Flexible organic field-effect transistors (OFETs) with TIPS-pentacene: polystyrene (PS) blend are demonstrated to exhibit enhanced mobility and significantly improved electrical stability compared to neat TIPS-pentacene on poly(4-vinylphenol) (PVP) dielectric (bi-layer OFETs), along with high mechanical stability. Due to merit of high quality dielectric-semiconductor interface, pristine TIPS-pentacene: PS blend OFETs exhibited maximum mobility of 0.93 cm2 V−1 s−1 with average of 0.44(±0.25) cm2 V−1 s−1 compared to 0.14(±0.10) cm2 V−1 s−1 for bi-layer OFETs with high current on-off ratios on the order 105 for both. Both types of devices exhibited high electrical stability upon bending with increasing magnitude of strain or its duration up to 5 days. However, significant differences in electrical stability of devices were observed upon applying constant bias-stress for 40 min to 1 h. Pristine blend devices exhibited outstanding electrical stability with very low drain current decay of
32 citations
"TIPS-Pentacene:PS Blend Organic Fie..." refers background or result in this paper
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TL;DR: It has been demonstrated that the low processing temperature of amorphous STO makes it the most suitable gate dielectric for flexible and transparent organic devices to operate under low voltage.
Abstract: We report that the pervoskite material, strontium titanate (STO) can be used as a gate dielectric layer of flexible and low voltage organic field effect transistor (OFET). The crystallinity, dielectric constant, and surface morphology of STO films can be controlled by the engineering of the growth condition. Under optimized growth condition, amorphous films of STO show a much better gate dielectric compared to other gate dielectrics used to date, with very small leakage current density for flexible and low voltage (<5 V) OFETs. The amorphous STO film decreases the interface trap density at organic/dielectric interface substantially. Pentacene transistors with amorphous STO gate dielectric show high mobility of 2 cm(2)/(V s), on/off ratio of 10(6), subthreshold swing of 0.3 V/dec and low interface trap density. Similarly excellent performance has been obtained in copper phthalocyanine (CuPc) based OFETs with on/off ratio ∼10(5) and carrier mobility ∼5.9 × 10(-2) cm(2)/(V s). Moreover, the operating voltage (∼5 V) has been reduced by more than one order of magnitude. It has been demonstrated that the low processing temperature of amorphous STO makes it the most suitable gate dielectric for flexible and transparent organic devices to operate under low voltage.
25 citations
"TIPS-Pentacene:PS Blend Organic Fie..." refers background in this paper
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