Transfer-field methods for electronic noise in submicron semiconductor structures
01 Sep 2001-Rivista Del Nuovo Cimento (Springer Science and Business Media LLC)-Vol. 24, Iss: 9, pp 1-72
About: This article is published in Rivista Del Nuovo Cimento.The article was published on 2001-09-01. It has received 40 citations till now. The article focuses on the topics: Semiconductor.
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University of Minnesota1, University of Michigan2, Florida State University3, University of Twente4, Queen's University Belfast5, University of California, Berkeley6, University of Belgrade7, University of Bristol8, University of Padua9, University of York10, Osaka University11, Loughborough University12, Leibniz Association13, Brno University of Technology14, Academy of Sciences of the Czech Republic15, Comenius University in Bratislava16, École Polytechnique17, Ulster University18, Clarkson University19, Michigan Technological University20, University of Antwerp21, Lublin University of Technology22, University of Montpellier23, Eindhoven University of Technology24, Max Planck Society25, University of Alberta26, Durham University27, Lawrence Berkeley National Laboratory28, National Institute of Advanced Industrial Science and Technology29, Saint Petersburg State University30
TL;DR: A review of the state-of-the-art of this multidisciplinary area and identifying the key research challenges is provided in this paper, where the developments in diagnostics, modeling and further extensions of cross section and reaction rate databases are discussed.
Abstract: Plasma–liquid interactions represent a growing interdisciplinary area of research involving plasma science, fluid dynamics, heat and mass transfer, photolysis, multiphase chemistry and aerosol science. This review provides an assessment of the state-of-the-art of this multidisciplinary area and identifies the key research challenges. The developments in diagnostics, modeling and further extensions of cross section and reaction rate databases that are necessary to address these challenges are discussed. The review focusses on non-equilibrium plasmas.
1,078 citations
TL;DR: In this paper, the authors discuss resonance and threshold phenomena in low-energy electron collisions with molecules and clusters, and the theoretical description of electron-molecule collisions generally requires an adequate description of electronic, vibrational and rotational degrees of freedom.
Abstract: Publisher Summary This chapter discusses resonance and threshold phenomena in low-energy electron collisions with molecules and clusters. Low-energy collisions of electrons with atoms and molecules are among the most important elementary processes in gaseous environments such as discharges, arcs, gas lasers, gaseous dielectrics and the earth's atmosphere. The dynamics behavior of low-energy electron-molecule collisions is discussed. The dynamical behavior of slow electrons traversing gases is to a large extent determined by two effects: the energy dependent evolution of the scattering phases for the relevant partial waves and the influence of temporary negative ion states (resonances). Some aspects of resonance and threshold phenomena are discussed. The theoretical description of electron-molecule collisions generally requires an adequate description of electronic, vibrational and rotational degrees of freedom. However, if the typical collision time is short compared to the rotational period, the molecule can be treated as having a fixed orientation during the collision process, and the result for the cross-section can be averaged over orientations. Treatment of vibrational dynamics is usually more important and more challenging to the theory. In the electron energy region important for applications, many inelastic processes such as vibrational excitation and dissociative electron attachment are driven by negative-ion resonances. The theoretical description of vibrational dynamics in these cases is usually based on the nonlocal complex potential describing the nuclear motion in the intermediate negative-ion state.
262 citations
TL;DR: In this article, the current status of the physics of charged particle swarms, mainly electrons, having plasma modelling in mind, is discussed and the need for reinitiating the swarm experiments and where and how those would be useful.
Abstract: In this review paper, we discuss the current status of the physics of charged particle swarms, mainly electrons, having plasma modelling in mind. The measurements of the swarm coefficients and the availability of the data are briefly discussed. We try to give a summary of the past ten years and cite the main reviews and databases, which store the majority of the earlier work. The need for reinitiating the swarm experiments and where and how those would be useful is pointed out. We also add some guidance on how to find information on ions and fast neutrals. Most space is devoted to interpretation of transport data, analysis of kinetic phenomena, and accuracy of calculation and proper use of transport data in plasma models. We have tried to show which aspects of kinetic theory developed for swarm physics and which segments of data would be important for further improvement of plasma models. Finally, several examples are given where actual models are mostly based on the physics of swarms and those include Townsend discharges, afterglows, breakdown and some atmospheric phenomena. Finally we stress that, while complex, some of the results from the kinetic theory of swarms and the related phenomenology must be used either to test the plasma models or even to bring in new physics or higher accuracy and reliability to the models. (Some figures in this article are in colour only in the electronic version)
217 citations
TL;DR: In this article, a Monte Carlo model was developed to study the degradation of ≤1000 eV electrons in an atmosphere of CO2, which is one of the most abundant species in Mars' and Venus's atmospheres.
Abstract: [1] A Monte Carlo model has been developed to study the degradation of ≤1000 eV electrons in an atmosphere of CO2, which is one of the most abundant species in Mars' and Venus's atmospheres. The e-CO2 cross sections are presented in an assembled set along with their analytical representations. Monte Carlo simulations are carried out at several energies to calculate the “yield spectra,” which embodied all the information related to the electron degradation process and can be used to calculate “yield” (or population) for any inelastic process. The numerical yield spectra have been fitted analytically, resulting in an analytical yield spectra. We have calculated the mean energy per ion pair and efficiencies for various inelastic processes, including the double and dissociative double ionization of CO2 and negative ion formation. The energy distribution of the secondary electrons produced per incident electron is also presented at few incident energies. The mean energy per ion pair for CO2 is 37.5 (35.8) eV at 200 (1000) eV, compared to the experimental value 32.7 eV at high energies. Ionization is the dominant loss process at energies above 50 eV with a contribution of ∼50%. Among the excitation processes, 13.6 eV and 12.4 eV states are the dominant loss processes consuming ∼28% energy above 200 eV. Around and below ionization threshold, 13.6 eV, 12.4 eV, and 11.1 eV, followed by 8.6 eV and 9.3 eV, excitation states are important loss processes, while below 10 eV, vibrational excitation dominates.
43 citations
TL;DR: In this paper, an interaction model at the molecular level for electrons in CH 4 is developed in the form of a Monte Carlo simulation, which is used to calculate the stopping power of methane and compare it with tabulated data provided by the NIST database.
37 citations
References
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TL;DR: In this paper, the authors derived transport equations for particles, momentum, and energy of electrons in a semiconductor with two distinct valleys in the conduction band, such as GaAs.
Abstract: Transport equations are derived for particles, momentum, and energy of electrons in a semiconductor with two distinct valleys in the conduction band, such as GaAs. Care is taken to state and discuss the assumptions which are made in the derivation. The collision processes are expressed in terms of relaxation times. The accuracy is improved by considering these to depend on the average kinetic energy rather than the electron temperature. Other transport equations used in the literature are discussed, and shown to be incomplete and inaccurate in many cases. In particular, the usual assumption that the mobility and diffusion constant depend locally on the electric field strength is shown to be incorrect. Rather, these quantities should be taken as functions of the local average velocity of electrons in the lower valley.
765 citations
458 citations
IBM1
TL;DR: In this paper, the authors investigated the effect of particle diffusion and heat flux on the velocity vs distance curve in MOSFETs and found that diffusion, usually neglected in previous studies, plays a major role and considerably modifies the features of the velocity versus distance curve, leading to an increase of the carrier drift velocity in the low-field region.
Abstract: Electron dynamics in silicon is investigated by means of improved momentum- and energy-balance equations including particle diffusion and heat flux. The resulting system of partial differential equations is numerically solved in a variety of field configurations including strong discontinuities, in order to enhance velocity overshoot effects. It is found that diffusion, usually neglected in previous studies, plays a major role, and considerably modifies the features of the velocity vs distance curve, leading to an increase of the carrier drift velocity in the low-field region, i.e. before experiencing the effect of the strong field. In addition, it is found that, in order to take full advantage of velocity overshoot effects in MOSFET's, a structure must be designed having the strongest possible field at the source-end of the channel, where carrier density is controlled by the gate.
361 citations
242 citations