Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects
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TLDR
Finite element simulation results of the transient stress response of an AlGaN/GaN high electron mobility transistor (HEMT) suggest transient failure mechanisms may differ from those previously studied under DC operation due to large amount of cyclic loading of a device around the gate structure.About:
This article is published in Microelectronics Reliability.The article was published on 2015-12-01 and is currently open access. It has received 34 citations till now. The article focuses on the topics: Stress (mechanics) & High-electron-mobility transistor.read more
Citations
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Journal ArticleDOI
The Effects of Gate-Connected Field Plates on Hotspot Temperatures of AlGaN/GaN HEMTs
TL;DR: In this paper, an electrothermal simulation is performed on devices with and without gate field plates having different thicknesses of Si3N4 surface passivation at two different biasing conditions.
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Monitoring the Joule heating profile of GaN/SiC high electron mobility transistors via cross-sectional thermal imaging
TL;DR: In this paper, the authors proposed a new cross-sectional imaging technique to map the vertical temperature distribution in gallium nitride (HEMTs) by combining advanced cross-sectioning processing with the recently developed near bandgap transient thermoreflectance imaging technique.
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Nanocrack formation due to inverse piezoelectric effect in AlGaN/GaN HEMT
TL;DR: In this paper, the Griffith's Equation and inverse piezo electric effect were used to show how physical degradation affects electrical properties of the device and also how cracks are generated in AlGaN epitaxial layer.
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Bonding GaN on high thermal conductivity graphite composite with adequate interfacial thermal conductance for high power electronics applications
TL;DR: In this article, the authors demonstrate an efficient heat transport hybrid structure by means of bonding GaN on a high thermal conductivity graphite composite (GC), and the thermal boundary conductance (TBC) across the GaN/GC interface is accurately estimated to be approximately 67MW/m2K, based on the measured TBC between Ti and GC, in excellent agreement with the prediction using the corrected diffuse mismatch model.
Journal ArticleDOI
Mechanical stress effects on electrical breakdown of freestanding GaN thin films
TL;DR: It is hypothesized that stress-generated defects climb to the free surfaces, creating localized leakage current instability or 'ringing' effects in GaN devices or in designing harsh environment sensors.
References
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Journal ArticleDOI
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Oliver Ambacher,B. E. Foutz,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,A. J. Sierakowski,William J. Schaff,L.F. Eastman,Roman Dimitrov,A. Mitchell,Martin Stutzmann +12 more
TL;DR: In this paper, a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance-voltage profiling measurements is used to calculate the polarization induced sheet charge bound at the AlGaN/GaN interfaces.
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Uniaxial-process-induced strained-Si: extending the CMOS roadmap
TL;DR: In this article, a more complete data set of n-and p-channel MOSFET piezoresistance and strain-altered gate tunneling is presented along with new insight into the physical mechanisms responsible for hole mobility enhancement.
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Elastic constants of gallium nitride
TL;DR: The elastic constants of GaN have been determined using Brillouin scattering; in GPa they are: C11=390, C33=398, C44=105, C66=123, C12=145, and C13=106.
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Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
Gaudenzio Meneghesso,Giovanni Verzellesi,F. Danesin,Fabiana Rampazzo,Franco Zanon,Augusto Tazzoli,Matteo Meneghini,Enrico Zanoni +7 more
TL;DR: In this article, failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed, and data from three de-accelerated tests are presented, which demonstrate a close correlation between failure mode and bias point.
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GaN HEMT reliability
J.A. del Alamo,Jungwoo Joh +1 more
TL;DR: This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress and suggests several paths to enhance the electrical reliability of GaN HEMTs.