Journal ArticleDOI
Transparent thin film transistors using ZnO as an active channel layer and their electrical properties
Satoshi Masuda,Ken Kitamura,Yoshihiro Okumura,Shigehiro Miyatake,Hitoshi Tabata,Tomoji Kawai +5 more
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TLDR
In this paper, a bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TFT) have been constructed using pulsed laser deposition at 450 °C at an oxygen pressure of 3 m Torr, and the material that was formed had a background carrier concentration of less than 5×1016 cm−3.Abstract:
Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO–TFT) have been constructed. The ZnO layers were deposited using pulsed laser deposition at 450 °C at an oxygen pressure of 3 m Torr, and the material that was formed had a background carrier concentration of less than 5×1016 cm−3. A double layer gate insulator consisting of SiO2 and SiNx was effective in suppressing leakage current and enabling the ZnO–TFT to operate successfully. The Ion/Ioff ratio of ZnO–TFTs fabricated on Si wafers was more than 105 and the optical transmittance of ZnO–TFTs fabricated on glass was more than 80%. These results show that it is possible to fabricate a transparent TFT that can even be operated in the presence of visible light.read more
Citations
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A comprehensive review of zno materials and devices
Ümit Özgür,Ya. I. Alivov,C. Liu,A. Teke,Michael A. Reshchikov,Seydi Doğan,Vitaliy Avrutin,Sang-Jun Cho,Hadis Morkoç +8 more
TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Journal ArticleDOI
The surface and materials science of tin oxide
Matthias Batzill,Ulrike Diebold +1 more
TL;DR: A review of surface science studies of single crystal surfaces, but selected studies on powder and polycrystalline films are also incorporated in order to provide connecting points between surface sciences studies with the broader field of materials science of tin oxide as discussed by the authors.
Patent
Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Journal ArticleDOI
Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
Elvira Fortunato,Pedro Barquinha,Ana Pimentel,Alexandra Gonçalves,António Marques,Rodrigo Martins,Luís Pereira +6 more
TL;DR: In this paper, the authors reported high performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration.
References
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Optically pumped lasing of ZnO at room temperature
TL;DR: In this paper, the authors reported the observation of optically pumped lasing in ZnO at room temperature using a plasma-enhanced molecular beam epitaxy on sapphire substrates.
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Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films
TL;DR: In this article, room-temperature ultraviolet (UV) laser emission of ZnO microcrystallite thin films is reported, which represents an important step towards the development of nanometer photoelectronics.
Journal ArticleDOI
Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition
TL;DR: In this paper, the growth of p-type ZnO film was realized for the first time by the simultaneous addition of NH3 in carrier hydrogen and excess Zn in source Zn O powder.
Journal ArticleDOI
p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping.
TL;DR: In this paper, the p-type behavior in ZnO thin films, which are prepared by codoping method using Ga (donor) and N (acceptor) as the dopants, was realized.
Journal ArticleDOI
Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices
R. D. Vispute,V. Talyansky,Supab Choopun,R. P. Sharma,Thirumalai Venkatesan,Maoqi He,Xiaohui Tang,Joshua B. Halpern,Michael G. Spencer,Y. X. Li,Lourdes Salamanca-Riba,Agis A. Iliadis,Kenneth A. Jones +12 more
TL;DR: In this paper, high-resolution transmission electron microscopy studies revealed high-quality epitaxial growth of ZnO on GaN with an atomically sharp interface and lattice matched epitaxy.