Transport and infrared photoresponse properties of InN nanorods/Si heterojunction.
Mahesh Kumar,Mahesh Kumar,Thirumaleshwara N. Bhat,Mohana K. Rajpalke,Basanta Roul,Basanta Roul,A. T. Kalghatgi,S. B. Krupanidhi +7 more
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TLDR
The faster rise and decay time indicate that the InN NRs/n-Si heterojunction is highly sensitive to IR light.Abstract:
The present work explores the electrical transport and infrared (IR) photoresponse properties of InN nanorods (NRs)/n-Si heterojunction grown by plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN NRs is verified by the X-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN NRs have sharp peaks E
2(high) at 490.2 cm-1 and A
1(LO) at 591 cm-1. The current transport mechanism of the NRs is limited by three types of mechanisms depending on applied bias voltages. The electrical transport properties of the device were studied in the range of 80 to 450 K. The faster rise and decay time indicate that the InN NRs/n-Si heterojunction is highly sensitive to IR light.read more
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Binary group III-nitride based heterostructures: band offsets and transport properties
Basanta Roul,Basanta Roul,Mahesh Kumar,Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,S. B. Krupanidhi +6 more
TL;DR: In this paper, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nodes-based opto-electronic devices.
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High-Performance p-BP/n-PdSe2 Near-Infrared Photodiodes with a Fast and Gate-Tunable Photoresponse.
Amir Muhammad Afzal,Ghulam Dastgeer,Muhammad Zahir Iqbal,Praveen Gautam,Mian Muhammad Faisal +4 more
TL;DR: A novel van der Waals (vdW) TMDs heterojunction photo-diode composed of black phosphorus (p-BP) and palladium diselenide (n-PdSe2) which establish a high and tunable rectification and photoresponsivity and demonstrates extraordinary values of detectivity and external quantum efficiency.
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Tunneling-based rectification and photoresponsivity in black phosphorus/hexagonal boron nitride/rhenium diselenide van der Waals heterojunction diode
Amir Muhammad Afzal,Amir Muhammad Afzal,Yasir Javed,Naveed Akhtar Shad,Muhammad Zahir Iqbal,Ghulam Dastgeer,M. Munir Sajid,Sohail Mumtaz +7 more
TL;DR: These findings provide a new paragon to use the TMD-based vdW heterostructure in electronic and optoelectronic applications, such as multi-valued logic.
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Black Phosphorus-IGZO van der Waals Diode with Low-Resistivity Metal Contacts.
Ghulam Dastgeer,Muhammad Farooq Khan,Janghwan Cha,Amir Muhammad Afzal,Keun Hong Min,Byung Min Ko,Hailiang Liu,Suklyun Hong,Jonghwa Eom +8 more
TL;DR: A van der Waals heterojunction composed of p-type black phosphorus (p-BP) and n-type indium-gallium-zinc oxide (n-IGZO) films with low-resistivity metal contacts is reported, and it demonstrates high rectification.
Journal ArticleDOI
Single n + -i-n + InP nanowires for highly sensitive terahertz detection
Kun Peng,Patrick Parkinson,Qian Gao,Jessica L. Boland,Ziyuan Li,Fan Wang,Sudha Mokkapati,Lan Fu,Michael B. Johnston,Hark Hoe Tan,Chennupati Jagadish +10 more
TL;DR: The axial doping profile of the n+-i-n+ InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated.
References
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Journal ArticleDOI
Unusual properties of the fundamental band gap of InN
Junqiao Wu,Wladek Walukiewicz,Kin Man Yu,Joel W. Ager,Eugene E. Haller,Hai Lu,William J. Schaff,Yoshiki Saito,Yasushi Nanishi +8 more
TL;DR: The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques as discussed by the authors.
Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
Journal ArticleDOI
Indium nitride (InN): A review on growth, characterization, and properties
TL;DR: In this paper, the authors reviewed the development of indium nitride (InN) semiconductors from its evolution to the present day and discussed the most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy.
Journal ArticleDOI
ZnO nanobelt/nanowire Schottky diodes formed by dielectrophoresis alignment across au electrodes.
TL;DR: Rectifying diodes of single nanobelt/nanowire-based devices have been fabricated by aligning single ZnO nanobelts/ nanowires across paired Au electrodes using dielectrophoresis to form the Schottky diode.
Journal ArticleDOI
Ensemble Monte Carlo study of electron transport in wurtzite InN
TL;DR: In this paper, the first five conduction bands derived from the pseudopotential method and a numerically calculated impact ionization transition rate using a wave-vector-dependent dielectric function were studied using an ensemble Monte Carlo method.