Journal ArticleDOI
Transport equations for electrons in two-valley semiconductors
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In this paper, the authors derived transport equations for particles, momentum, and energy of electrons in a semiconductor with two distinct valleys in the conduction band, such as GaAs.Abstract:
Transport equations are derived for particles, momentum, and energy of electrons in a semiconductor with two distinct valleys in the conduction band, such as GaAs. Care is taken to state and discuss the assumptions which are made in the derivation. The collision processes are expressed in terms of relaxation times. The accuracy is improved by considering these to depend on the average kinetic energy rather than the electron temperature. Other transport equations used in the literature are discussed, and shown to be incomplete and inaccurate in many cases. In particular, the usual assumption that the mobility and diffusion constant depend locally on the electric field strength is shown to be incorrect. Rather, these quantities should be taken as functions of the local average velocity of electrons in the lower valley.read more
Citations
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Journal ArticleDOI
An investigation of steady-state velocity overshoot in silicon
G. Baccarani,M.R. Wordeman +1 more
TL;DR: In this paper, the authors investigated the effect of particle diffusion and heat flux on the velocity vs distance curve in MOSFETs and found that diffusion, usually neglected in previous studies, plays a major role and considerably modifies the features of the velocity versus distance curve, leading to an increase of the carrier drift velocity in the low-field region.
Book
Transport Equations for Semiconductors
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Transient Simulation of Silicon Devices and Circuits
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A review of hydrodynamic and energy-transport models for semiconductor device simulation
TL;DR: A detailed review of various transport models proposed which account for the average carrier energy or temperature, highlighting the differences and similarities between the models, and shed some light on the critical issues associated with higher order transport models.
Journal ArticleDOI
On a hierarchy of macroscopic models for semiconductors
N. Ben Abdallah,Pierre Degond +1 more
TL;DR: In this article, the diffusion limit of the semiconductor Boltzmann equation towards the spherical harmonic expansion model was investigated under the assumption of dominant elastic scattering. And the diffusion model can be connected to the energy-transport model or to a periodic spherical harmonization model through diffusion approximation, respectively making electron or phonon scattering large.
References
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Journal ArticleDOI
Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductors
D.E. McCumber,A.G. Chynoweth +1 more
TL;DR: In this paper, a theory of negativeconductance amplification and Gunn effect oscillation for two-valley semiconductors such as GaAs and InP is presented. Butler et al. proposed a conduction-band model in which the relative populations of two valleys of vastly different mobility are determined by the average electron temperature.
Journal ArticleDOI
High-Field Transport in n- Type GaAs
E. M. Conwell,M. O. Vassell +1 more
TL;DR: In this article, the electron distributions were solved for the coupled Boltzmann equations of the GaAs under a set of approximations that are fair for fields around the beginning of the negative-differential-resistance region, but should be quite good at higher fields.
Journal ArticleDOI
High-field distribution function in GaAs
E.M. Conwell,M.O. Vassell +1 more
TL;DR: In this article, it was shown that intervalley scattering is more important than polar optical scattering for high-energy electrons in either the central or the outer valleys, and the number of electrons per unit energy range, calculated from the solution of the Boltzmann equation, was given for electrons in both valleys for a field of 2.4 × 103volts/cm.
Journal ArticleDOI
The intervalley transfer mechanism of negative resistivity in bulk semiconductors
P N Butcher,W Fawcett +1 more
TL;DR: In this article, a theoretical study of hot-electron transfer from the light-mass central valley to the surrounding heavy-mass satellite valleys in n-type GaAs, InP and CdTe was made.
Journal ArticleDOI
Effect of Nonuniform Conductivity on the Behavior of Gunn Effect Samples
TL;DR: In this paper, the behavior of n+−n−n+n+ GaAs samples biased at voltages below the threshold for the onset of the Gunn effect is derived.