Transverse Magnetoresistance of n‐Type Germanium for High Electric Fields Applied in the 〈111〉 Direction
01 May 1966-Journal of Applied Physics (American Institute of Physics)-Vol. 37, Iss: 6, pp 2319-2320
TL;DR: The transverse magnetoresistance of 5-Ω·cm n-type germanium at different magnetic fields for an electric field applied in the 〈111〉 direction up to 5 kV/cm has been measured as mentioned in this paper.
Abstract: The transverse magnetoresistance of 5‐Ω·cm n‐type germanium at different magnetic fields for an electric field applied in the 〈111〉 direction up to 5 kV/cm has been measured. It has been found that (i) magnetoresistance at a particular electric field decreases with increase of magnetic fields, (ii) at small magnetic fields magnetoresistance decreases with increase of electric field, and (iii) the ratio of the square root of magnetoresistance and the conductivity mobility is independent of electric fields up to 5 kV/cm.
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TL;DR: In this paper, a first-principles theory of carrier distribution in the presence of an electric field of arbitrary strength, which takes into account the quantum-mechanical field-broadening, is described under conditions that the acoustic-phonon scattering is the dominant mechanism of scattering.
Abstract: A first-principles theory of carrier distribution in the presence of an electric field of arbitrary strength, which takes into account the quantum-mechanical field-broadening, is described under conditions that the acoustic-phonon scattering is the dominant mechanism of scattering. The general expression of the mobility so obtained reduces to its Ohmic value for vanishing small electric fields, is a quadratic function of electric field in the warm-electron regime, and varies inversely with the electric field at sufficiently high electric fields (hot-electron regime). A saturation current is obtained in the high-field limit, when electron mobility is limited solely by the field-broadening effect; the saturation velocity being comparable to the thermal velocity of an electron. The hot-electron temperature, defined in terms of average energy of an electron, is equal to the lattice temperature in the Ohmic regime, rises quadratically with the increasing electric field in the warm-electron regime, and rises linearly in the hot-electron regime. These results are in agreement with those of experiments on n-Germanium.
72 citations
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TL;DR: In this paper, the experimental results on the conduction and anisotropy characteristics have been collected from different sources and compared to determine the consistency of the data, and the principles and basic assumptions on which the theories of hot carrier conduction have been developed are outlined.
Abstract: Hot carrier d.c. conduction characteristics of the elemental semiconductors, germanium and silicon, are reviewed. The experimental results on the conduction and anisotropy characteristics have been collected from different sources and compared to determine the consistency of the data. The general features of the results are then described. The principles and basic assumptions on which the theories of hot carrier conduction have been developed are outlined. The experimental results are then examined in the light of the theories and the agreements and discrepancies are pointed out. Some studies which are required for the clarification and the elucidation of the results are also suggested.
14 citations
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TL;DR: In this article, the longitudinal magnetoresistance and Hall mobility of 5-Ω·cm n-type germanium have been measured for electric fields applied in the (111) direction up to 4 kV/cm.
Abstract: The longitudinal magnetoresistance and Hall mobility of 5‐Ω·cm n‐type germanium have been measured for electric fields applied in the (111) direction up to 4 kV/cm. It has been found that (i) longitudinal magnetoresistance at a particular electric field decreases with an increase in the magnetic field, (ii) for small magnetic fields the longitudinal magnetoresistance decreases with an increase in the electric field, and (iii) the Hall mobility and the ratio of Hall mobility to the conductivity mobility decrease with an increase in the electric field.The experimental value for fields above 1 kV/cm are found to agree with the theoretical values calculated with the assumptions that (i) the scattering is due to the acoustic, optical, and intervalley phonons, (ii) the average energy of the electrons is much larger than that of the optical phonons, (iii) the intervalley phonons affect only the carrier repopulation in the different valleys, and (iv) the value of the optical‐phonon deformation potential constant ...
6 citations
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01 Jun 1967
TL;DR: In this article, hot carrier galvanomagnetic characteristics of n-type germanium of intermediate carrier concentration were studied theoretically, where the range of carrier concentration considered ensures that the intercarrier collisions enforce a Maxwellian distribution on the carriers, and the momentum loss of the carriers occurs mainly through scattering by the lattice vibrations.
Abstract: Hot carrier galvanomagnetic characteristics of n-type germanium of intermediate carrier concentration are studied theoretically. The range of carrier concentration considered ensures that the intercarrier collisions enforce a Maxwellian distribution on the carriers, and the momentum loss of the carriers occurs mainly through scattering by the lattice vibrations. Numerical values of Hall mobility obtained from the present analysis are found to be in agreement with the earlier published results for low and high carrier concentrations. Values of magnetoresistance, however, while agreeing with the low concentration case, are found to be different from those for the case of high carrier concentration. The physical origin of this difference is discussed and a comparison between the available experimental data and the values calculated in this paper is also made
2 citations
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TL;DR: In this article, experimental results on longitudinal magnetoresistance, transverse and Hall mobility of a 5 ohm-cm n-type germanium sample for high electric field applied along the 〈100〉 direction are reported.
Abstract: Experimental results on longitudinal magnetoresistance, transverse magnetoresistance and Hall mobility of a 5 ohm-cm n-type germanium sample for high electric field applied along the 〈100〉 direction are reported. The results are found to show good agreement with the theory developed considering scattering due to acoustic, optical and inter-valley phonons.
1 citations
References
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TL;DR: In this article, the authors investigated the non-ohmic current in a many-valley semiconductor by considering scattering by acoustic and optical modes of vibrations and intervalley scatterings, and determined the intensity of these interactions from observed data for the temperature-dependence of the ohmic current, and the acoustoelectric effect.
Abstract: The non-ohmic current in a many-valley semiconductor has been investigated by considering scattering by acoustic and optical modes of vibrations and intervalley scatterings. The intensity of these interactions has been determined from observed data for the temperature-dependence of the ohmic current, and the acousto-electric effect. The theoretical result for the drift velocity is in good quantitative agreement with the observations of Gunn and of Ryder over a wide range of the applied field. The anisotropy in the hot-electron current observed by Sasaki et al. is also discussed.
41 citations
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01 Aug 1965
TL;DR: An expression for the magnetoresistance of many-valley semiconductors valid in the hot-carrier region is derived from the distribution of carriers obtained by solving Boltzmann's equation as mentioned in this paper.
Abstract: An expression for the magnetoresistance of many-valley semiconductors valid in the hot-carrier region is derived from the distribution of carriers obtained by solving Boltzmann's equation. Numerical results for small magnetic fields calculated with the parameter values of n-type germanium are also presented. The results indicate that the magnetoresistance coefficient increases with the strength of the electric field.
6 citations
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