Tuning the magnetic coupling across ultrathin antiferromagnetic films by controlling atomic-scale roughness
TL;DR: Atomic-level control of the interface morphology is achieved by systematically varying the thicknesses of the bottom ferromagnetic and the antiferromagnetic layer, and it is found that the magnetic coupling across the interface is mediated by step edges of single-atom height, whereas atomically flat areas do not contribute.
Abstract: Characterization and control of the interface structure and morphology at the atomic level is an important issue in understanding the magnetic interaction between an antiferromagnetic material and an adjacent ferromagnet in detail, because the atomic spins in an antiferromagnet change direction on the length scale of nearest atomic distances. Despite its technological importance for the development of advanced magnetic data-storage devices and extensive studies, the details of the magnetic interface coupling between antiferromagnets and ferromagnets have remained concealed. Here we present the results of magneto-optical Kerr-effect measurements and layer-resolved spectro-microscopic magnetic domain imaging of single-crystalline ferromagnet-antiferromagnet- ferromagnet trilayers. Atomic-level control of the interface morphology is achieved by systematically varying the thicknesses of the bottom ferromagnetic and the antiferromagnetic layer. We find that the magnetic coupling across the interface is mediated by step edges of single-atom height, whereas atomically flat areas do not contribute.
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TL;DR: In this paper, it was shown that the (0001) surface of magnetoelectric Cr(2)O(3) has a roughness-insensitive, electrically switchable magnetization.
Abstract: Voltage-controlled spin electronics is crucial for continued progress in information technology. It aims at reduced power consumption, increased integration density and enhanced functionality where non-volatile memory is combined with high-speed logical processing. Promising spintronic device concepts use the electric control of interface and surface magnetization. From the combination of magnetometry, spin-polarized photoemission spectroscopy, symmetry arguments and first-principles calculations, we show that the (0001) surface of magnetoelectric Cr(2)O(3) has a roughness-insensitive, electrically switchable magnetization. Using a ferromagnetic Pd/Co multilayer deposited on the (0001) surface of a Cr(2)O(3) single crystal, we achieve reversible, room-temperature isothermal switching of the exchange-bias field between positive and negative values by reversing the electric field while maintaining a permanent magnetic field. This effect reflects the switching of the bulk antiferromagnetic domain state and the interface magnetization coupled to it. The switchable exchange bias sets in exactly at the bulk Neel temperature.
507 citations
TL;DR: In this paper, the authors showed that the roughness-insensitive and electrically controllable magnetization at the (0001) surface of antiferromagnetic chromia can be explained by the interplay of surface termination and magnetic ordering.
Abstract: Roughness-insensitive and electrically controllable magnetization at the (0001) surface of antiferromagnetic chromia is observed using magnetometry and spin-resolved photoemission measurements and explained by the interplay of surface termination and magnetic ordering. Further, this surface in placed in proximity with a ferromagnetic Co/Pd multilayer film. Exchange coupling across the interface between chromia and Co/Pd induces an electrically controllable exchange bias in the Co/Pd film, which enables a reversible isothermal (at room temperature) shift of the global magnetic hysteresis loop of the Co/Pd film along the magnetic field axis between negative and positive values. These results reveal the potential of magnetoelectric chromia for spintronic applications requiring non-volatile electric control of magnetization.
394 citations
Journal Article•
TL;DR: It is shown that the (0001) surface of magnetoelectric Cr(2)O(3) has a roughness-insensitive, electrically switchable magnetization, which reflects the switching of the bulk antiferromagnetic domain state and the interface magnetization coupled to it.
Abstract: Voltage-controlled spin electronics is crucial for continued progress in information technology. It aims at reduced power consumption, increased integration density and enhanced functionality where non-volatile memory is combined with high-speed logical processing. Promising spintronic device concepts use the electric control of interface and surface magnetization. From the combination of magnetometry, spin-polarized photoemission spectroscopy, symmetry arguments and first-principles calculations, we show that the (0001) surface of magnetoelectric Cr(2)O(3) has a roughness-insensitive, electrically switchable magnetization. Using a ferromagnetic Pd/Co multilayer deposited on the (0001) surface of a Cr(2)O(3) single crystal, we achieve reversible, room-temperature isothermal switching of the exchange-bias field between positive and negative values by reversing the electric field while maintaining a permanent magnetic field. This effect reflects the switching of the bulk antiferromagnetic domain state and the interface magnetization coupled to it. The switchable exchange bias sets in exactly at the bulk Néel temperature.
315 citations
TL;DR: In this paper, a family of Heusler alloys with a compensated ferrimagnetic state was designed and a giant exchange bias of more than 3 T and a large coercivity were established.
Abstract: Rational material design can accelerate the discovery of materials with improved functionalities. This approach can be implemented in Heusler compounds with tunable magnetic sublattices to demonstrate unprecedented magnetic properties. Here, we have designed a family of Heusler alloys with a compensated ferrimagnetic state. In the vicinity of the compensation composition in Mn-Pt-Ga, a giant exchange bias (EB) of more than 3 T and a large coercivity are established. The large exchange anisotropy originates from the exchange interaction between the compensated host and ferrimagnetic clusters that arise from intrinsic anti-site disorder. Our design approach is also demonstrated on a second material with a magnetic transition above room temperature, Mn-Fe-Ga, exemplifying the universality of the concept and the feasibility of room-temperature applications. These findings may lead to the development of magneto-electronic devices and rare-earth-free exchange-biased hard magnets, where the second quadrant magnetization can be stabilized by the exchange bias.
235 citations
TL;DR: In this article, the most important models for the exchange bias effect are reviewed and the most recent experiments in the light of the presented models are discussed, as well as recent experimental results.
Abstract: The exchange bias effect, discovered more than fifty years ago, is a fundamental interfacial property, which occurs between ferromagnetic and antiferromagnetic materials. After intensive experimental and theoretical research over the last ten years, a much clearer picture has emerged about this effect, which is of immense technical importance for magneto-electronic device applications. In this review we start with the discussion of numerical and analytical results of those models which are based on the assumption of coherent rotation of the magnetization. The behavior of the ferromagnetic and antiferromagnetic spins during the magnetization reversal, as well as the dependence of the critical fields on characteristic parameters such as exchange stiffness, magnetic anisotropy, interface disorder etc. are analyzed in detail and the most important models for exchange bias are reviewed. Finally recent experiments in the light of the presented models are discussed.
234 citations
References
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TL;DR: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron, which has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices.
Abstract: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.
9,917 citations
Book•
01 Jan 1997
TL;DR: Magnetic properties of magnetism have been studied in a wide range of applications, including magnetism of amorphous materials, magnetism and magnetostriction as mentioned in this paper, spin distribution and domain walls.
Abstract: 1. Magnetostatic phenomena 2. Magnetic measurements 3. Atomic magnetic moments 4. Macroscopic experimental techniques 5. Magnetic disorder 6. Ferromagnetism 7. Antiferromagnetism and ferrimagnetism 8. Magnetism of metals and alloys 9. Magnetism of ferromagnetic oxides 10. Magnetism of compounds 11. Magnetism of amorphous materials 12. Magnetocrystalline anisotrophy 13. Induced magnetic anisotropy 14. Magnetostriction 15. Observation of domain structures 16. Spin distribution and domain walls 17. Magnetic domain structure 18. Technical magnetization 19. Spin phase transition 20. Dynamic magnetization 21. Various phenomena association with magnetization 22. Engineering applications of magnetic materials
1,486 citations
TL;DR: It is shown that magnetic exchange coupling induced at the interface between ferromagnetic and antiferromagnetic systems can provide an extra source of anisotropy, leading to magnetization stability.
Abstract: Interest in magnetic nanoparticles has increased in the past few years by virtue of their potential for applications in fields such as ultrahigh-density recording and medicine. Most applications rely on the magnetic order of the nanoparticles being stable with time. However, with decreasing particle size the magnetic anisotropy energy per particle responsible for holding the magnetic moment along certain directions becomes comparable to the thermal energy. When this happens, the thermal fluctuations induce random flipping of the magnetic moment with time, and the nanoparticles lose their stable magnetic order and become superparamagnetic. Thus, the demand for further miniaturization comes into conflict with the superparamagnetism caused by the reduction of the anisotropy energy per particle: this constitutes the so-called 'superparamagnetic limit' in recording media. Here we show that magnetic exchange coupling induced at the interface between ferromagnetic and antiferromagnetic systems can provide an extra source of anisotropy, leading to magnetization stability. We demonstrate this principle for ferromagnetic cobalt nanoparticles of about 4 nm in diameter that are embedded in either a paramagnetic or an antiferromagnetic matrix. Whereas the cobalt cores lose their magnetic moment at 10 K in the first system, they remain ferromagnetic up to about 290 K in the second. This behaviour is ascribed to the specific way ferromagnetic nanoparticles couple to an antiferromagnetic matrix.
1,459 citations
TL;DR: In this paper, exchange biased magnetic tunnel junction (MTJ) structures are shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture, which exhibit very large magnetoresistive (MR) values exceeding 40% at room temperature, with specific resistance values ranging down to as little as ∼60 Ω(μm)2.
Abstract: Exchange biased magnetic tunnel junction (MTJ) structures are shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture. MTJ elements have been developed which exhibit very large magnetoresistive (MR) values exceeding 40% at room temperature, with specific resistance values ranging down to as little as ∼60 Ω(μm)2, and with MR values enhanced by moderate thermal treatments. Large MR values are observed in magnetic elements with areas as small as 0.17 (μm)2. The magnetic field dependent current–voltage characteristics of an MTJ element integrated with a silicon diode are analyzed to extract the MR properties of the MTJ element itself.
1,110 citations