Tunnel oxides in AlSiOx/p-Si diodes by high pressure, low temperature oxidation of Si(100) and Si(111)
TL;DR: In this paper, tunnel oxide (SiOx) films were grown on (100) and (111) oriented, 10 Omega cm, p-type silicon wafers at a temperature of 250 degrees C, and pressure of 2 atm in dry oxygen ambient.
Abstract: Tunnel oxide (SiOx) films, about 20 AA in thickness, were grown on (100) and (111) oriented, 10 Omega cm, p-type silicon wafers at a temperature of 250 degrees C, and pressure of 2 atm in dry oxygen ambient. The SiOx films were characterized using AlSiOx/p-Si MIS diodes with semi-transparent metal electrodes, by variable illumination current-voltage technique. The open-circuit voltage, short-circuit current, ideality factor and reverse saturation current were studied as functions of oxidation time and were found to be in accordance with a reduction of the interface state density with the oxide growth. From the experimental n-values the interface state densities were calculated and were found to be of the order of 1012 cm-2 eV-1 for both orientations. The reverse saturation current density obtained was of the order of 10-7 A cm-2 for (111) oriented substrates and 10-8 A cm-2 for the (100) orientation. The order of the oxide fixed charge was computed using deviation in the experimental barrier height from the theoretical barrier height (assuming no fixed charges are present). This was found to be of the order of 1012 cm-2 in both cases.
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TL;DR: In this paper, the influence of the Al/Si atomic ratio in dc magnetron sputtered Al1-x6Oy amorphous and transparent films upon their chemical composition, films' structure, optical and electrical properties was investigated.
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TL;DR: In this article, the I-V and C-V characteristics of MIS diodes fabricated on silicon surfaces treated with 5% HF were investigated and it was observed that the ideality factor n = 1.25, density of interface states Dit = 9 × 1011/ cm-2 eV-1, effective barrier height Vb = 0.74 V, open-circuit voltage Voc =0.28 V, and density of fixed oxide charges Q 0~1011 cm 2 of 5%HF treated dioded are lower than those of untreated devices
Abstract: Our earlier XPS and UPS studies have shown that etching a silicon surface with 5% HF concentration produces a stable surface with minimum contamination and low density of surface states. This has prompted us to study the I-V and C-V characteristics of MIS diodes fabricated on silicon surfaces treated with 5% HF. Tunnel oxides of ~20 A are grown on p-type (100) surfaces by a high-pressure (2 atm) and low-temperature (250 °C) method. Aluminum dots are vacuum evaporated through metal masks onto the oxide to fabricate MIS diodes. For photovoltaic measurements the gate electrode is made semitransparent by reducing its thickness to ~120 A. From the variable-illumination current-voltage characteristics it is observed that the ideality factor n = 1.25, density of interface states Dit = 9 × 1011/ cm-2 eV-1, effective barrier height Vb = 0.74 V, open-circuit voltage Voc = 0.28 V and density of fixed oxide charges Q0~1011 cm-2 of 5% HF treated diodes are lower than those of untreated devices where n = 1.54, Dit = 2 × 1012 cm-2 eV-1, Vb = 0.78 V, Voc = 0.42 V and Q0~1012 cm-2. This is attributed to the removal of the native oxide and passivation of silicon dangling bonds by HF treatment. C-V characteristics of the MIS diodes also confirmed the reduction in barrier height on HF treatment. An increase in negative charges with increasing HF concentration, possibly due to excess of fluorine ions which may be responsible for the reduction in barrier height, is found in the interfacial layer.
TL;DR: In this paper, metal-dielectric-semiconductor (MDS) structures with aluminum nitride (AlN) as a tunnel dielectric based on high-ohmic p-type silicon substrates have been studied.
Abstract: Metal-dielectric-semiconductor (MDS) structures with aluminum nitride (AlN) as a tunnel dielectric based on high-ohmic p-type silicon substrates have been studied. The samples were characterized with respect to the charge collection efficiency and energy resolution on probing with 5.4-MeV α particles. In addition, the nature of noises and the state of the AlN-p-Si interface were investigated. It is established that the parameters of these MDS structures as radiation detectors are close to those of widely used Schottky-barrier detectors based on n-Si (Au-n-Si). A decrease in the concentration of deep centers at the AlN-p-Si interface allows the proposed MDS structures to compete successfully with n-Si based detectors, which is due to a higher purity of the initial material.
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TL;DR: This paper considers the design, fabrication, and characterization of very small Mosfet switching devices suitable for digital integrated circuits, using dimensions of the order of 1 /spl mu/.
Abstract: This paper considers the design, fabrication, and characterization of very small Mosfet switching devices suitable for digital integrated circuits, using dimensions of the order of 1 /spl mu/. Scaling relationships are presented which show how a conventional MOSFET can be reduced in size. An improved small device structure is presented that uses ion implantation, to provide shallow source and drain regions and a nonuniform substrate doping profile. One-dimensional models are used to predict the substrate doping profile and the corresponding threshold voltage versus source voltage characteristic. A two-dimensional current transport model is used to predict the relative degree of short-channel effects for different device parameter combinations. Polysilicon-gate MOSFET's with channel lengths as short as 0.5 /spl mu/ were fabricated, and the device characteristics measured and compared with predicted values. The performance improvement expected from using these very small devices in highly miniaturized integrated circuits is projected.
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TL;DR: In this paper, a theoretical and experimental study has been made of silicon Schottky diodes in which the metal and semiconductor are separated by a thin interfacial film.
Abstract: A theoretical and experimental study has been made of silicon Schottky diodes in which the metal and semiconductor are separated by a thin interfacial film. A generalized approach is taken towards the interface states which considers their communication with both the metal and the semiconductor. Diodes were fabricated with interfacial films ranging from 8 to 26 A in thickness, and their characteristics are related to this model. The effects of reduced transmission coefficients together with fixed charge in the film are investigated. The interpretation of the current-voltage characteristics and the validity of the C−2-V method in the determination of diffusion potentials are discussed.
1,519 citations
TL;DR: In this paper, the authors reported that the active area efficiency of a 3.1-cm2 silicon solar cell was close to the best silicon cell yet produced with 17.6% active-area efficiency (AM1, 28°C).
Abstract: Major new results are reported for silicon MIS solar cells. Open‐circuit voltages up to 655 mV (AM0, 25 °C) have been obtained for 0.1‐Ω cm silicon wafers, substantially higher than previously reported for any other silicon solar cell. On an active‐area basis, the efficiency of these high‐output‐voltage cells is close to the best silicon cell yet produced with 17.6% active‐area efficiency (AM1, 28 °C) for a 3‐cm2 cell.
141 citations
133 citations