Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well
TL;DR: In this article, the valence and conduction band offsets (VBO and CBO) at the semiconductor heterojunction are crucial parameters to design the active region of contemporary electronic and optoelectronic devices.
Abstract: The valence and conduction band offsets (VBO and CBO) at the semiconductor heterojunction are crucial parameters to design the active region of contemporary electronic and optoelectronic devices. In this report, to study the band alignment parameters at the In0.15Al0.85N/MoS2 lattice matched heterointerface, large area MoS2 single layers are chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N films and vice versa. We grew InAlN having an in-plane lattice parameter closely matching with that of MoS2. We confirm that the grown MoS2 is a single layer from optical and structural analyses using micro-Raman spectroscopy and scanning transmission electron microscopy. The band offset parameters VBO and CBO at the In0.15Al0.85N/MoS2 heterojunction are determined to be 2.08 ± 0.15 and 0.60 ± 0.15 eV, respectively, with type-I band alignment using high-resolution x-ray photoelectron spectroscopy in conjunction with ultraviolet photoelectron spectroscopy. Furthermore, we design a MoS2 quantum well structure by growing an In0.15Al0.85N layer on MoS2/In0.15Al0.85N type-I heterostructure. By reducing the nitrogen plasma power and flow rate for the overgrown In0.15Al0.85N layers, we achieve unaltered structural properties and a reasonable preservation of photoluminescence intensity with a peak width of 70 meV for MoS2 quantum well (QW). The investigation provides a pathway towards realizing large area, air-stable, lattice matched, and eventual high efficiency In0.15Al0.85N/MoS2/In0.15Al0.85N QW-based light emitting devices.
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TL;DR: In this article, a review of recent achievements of 2D nanostructured materials for chemiresistive-type gas sensors is presented, where the basic sensing mechanism is described based on charge transfer behavior between gas species and 2D nano-materials.
Abstract: Two-dimensional (2D) nanostructures are gaining tremendous interests due to the fascinating physical, chemical, electrical, and optical properties. Recent advances in 2D nanomaterials synthesis have contributed to optimization of various parameters such as physical dimension and chemical structure for specific applications. In particular, development of high performance gas sensors is gaining vast importance for real-time and on-site environmental monitoring by detection of hazardous chemical species. In this review, we comprehensively report recent achievements of 2D nanostructured materials for chemiresistive-type gas sensors. Firstly, the basic sensing mechanism is described based on charge transfer behavior between gas species and 2D nanomaterials. Secondly, diverse synthesis strategies and characteristic gas sensing properties of 2D nanostructures such as graphene, metal oxides, transition metal dichalcogenides (TMDs), metal organic frameworks (MOFs), phosphorus, and MXenes are presented. In addition, recent trends in synthesis of 2D heterostructures by integrating two different types of 2D nanomaterials and their gas sensing properties are discussed. Finally, this review provides perspectives and future research directions for gas sensor technology using various 2D nanomaterials.
177 citations
TL;DR: In this article, first-principle calculations of P, BSe, and SiC monolayers and their van der Waals heterostructures are investigated by (hybrid) first-plausar calculations.
Abstract: Electronic structure, optical, and photocatalytic properties of P, BSe, and SiC monolayers and their van der Waals heterostructures are investigated by (hybrid) first-principle calculations. The stability of the heterostructures and their corresponding induced-strain/unstrain monolayers are confirmed by the phonon spectra calculations. Similar to the corresponding parent monolayers, P-BSe (BSe-SiC) heterostructures are indirect type-II (type-I) bandgap semiconductors. A tensile strain of 10% (2%) transforms P-BSe (BSe-SiC) to type-I (type-II) direct bandgap nature. Interestingly, irrespective of the corresponding monolayers, the P-SiC heterostructure is a direct bandgap (type-II) semiconductor. The calculated electron and hole carrier mobilities of these heterostructures are in the range of 1.2 × 10 4 cm 2 / Vs to 68.56 × 10 4 cm 2 / Vs. Furthermore, absorption spectra are calculated to understand the optical behavior of these systems, where the lowest energy transitions are dominated by excitons. The valence and conduction band edges straddle the standard redox potentials in P-BSe, BSe-SiC, and P-SiC (strained) heterostructures, making them promising candidates for water splitting in the acidic solution. An induced compressive strain of 3.5% makes P suitable for water splitting at pH = 0.
56 citations
TL;DR: In this paper, the authors provide an overview of aluminum nitride, sapphire, and gallium oxide as platforms for deep-ultraviolet optoelectronic devices, in which they criticize the status of sarspphire as a platform for efficient deep UV devices and detail advancements in device growth and fabrication.
Abstract: Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride optoelectronic devices, based on aluminum gallium nitride and boron nitride and their alloys, and the heterogeneous integration with two-dimensional and oxide-based materials is reviewed. We emphasize wide-bandgap nitride compound semiconductors (i.e., (B, Al, Ga)N) as the deep-ultraviolet materials of interest, and two-dimensional materials, namely graphene, two-dimensional boron nitride, and two-dimensional transition metal dichalcogenides, along with gallium oxide, as the hybrid integrated materials. We examine their crystallographic properties and elaborate on the challenges that hinder the realization of efficient and reliable ultraviolet and deep-ultraviolet devices. In this article we provide an overview of aluminum nitride, sapphire, and gallium oxide as platforms for deep-ultraviolet optoelectronic devices, in which we criticize the status of sapphire as a platform for efficient deep-ultraviolet devices and detail advancements in device growth and fabrication on aluminum nitride and gallium oxide substrates. A critical review of the current status of deep-ultraviolet light emission and detection materials and devices is provided.
39 citations
TL;DR: In this article, the authors acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST) under Grant No. KACST TIC R2-FP-008.
Abstract: We acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST) under Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding No. BAS/1/1614-01-01 and MBE equipment funding No. C/M-20000-12-001-77.
22 citations
Cites background from "Type-I band alignment at MoS2/In0.1..."
...AlGaN-based photodetectors can overcome these problems as they have better spectral selectivity due to the direct bandgap and capability of tuning the cut-off wavelength by varying the composition of the ternary alloys.(189) Since the first demonstration of GaN-based UV photodetectors by Khan et al....
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09 Jun 2021
TL;DR: In this paper, the authors presented a method to provide access to a realistic metal-semiconductor interface by large-area exfoliation of single-layer MoS2 on clean polycrystalline gold surfaces.
Abstract: Two-dimensional semiconductors such as MoS2 are promising for future electrical devices. The interface to metals is a crucial and critical aspect for these devices because undesirably high resistances due to Fermi level pinning are present, resulting in unwanted energy losses. To date, experimental information on such junctions has been obtained mainly indirectly by evaluating transistor characteristics. The fact that the metal-semiconductor interface is typically embedded, further complicates the investigation of the underlying physical mechanisms at the interface. Here, we present a method to provide access to a realistic metal-semiconductor interface by large-area exfoliation of single-layer MoS2 on clean polycrystalline gold surfaces. This approach allows us to measure the relative charge neutrality level at the MoS2-gold interface and its spatial variation almost directly using Kelvin probe force microscopy even under ambient conditions. By bringing together hitherto unconnected findings about the MoS2-gold interface, we can explain the anomalous Raman signature of MoS2 in contact to metals [ACS Nano. 7, 2013, 11350] which has been the subject of intense recent discussions. In detail, we identify the unusual Raman mode as the A1g mode with a reduced Raman shift (397 cm-1) due to the weakening of the Mo-S bond. Combined with our X-ray photoelectron spectroscopy data and the measured charge neutrality level, this is in good agreement with a previously predicted mechanism for Fermi level pinning at the MoS2-gold interface [Nano Lett.14, 2014, 1714]. As a consequence, the strength of the MoS2-gold contact can be determined from the intensity ratio between the reduced A1greduced mode and the unperturbed A1g mode.
20 citations
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TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Abstract: Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
12,477 citations
TL;DR: This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime by characterized by Raman spectroscopy.
Abstract: Molybdenum disulfide (MoS2) of single- and few-layer thickness was exfoliated on SiO2/Si substrate and characterized by Raman spectroscopy. The number of S−Mo−S layers of the samples was independently determined by contact-mode atomic force microscopy. Two Raman modes, E12g and A1g, exhibited sensitive thickness dependence, with the frequency of the former decreasing and that of the latter increasing with thickness. The results provide a convenient and reliable means for determining layer thickness with atomic-level precision. The opposite direction of the frequency shifts, which cannot be explained solely by van der Waals interlayer coupling, is attributed to Coulombic interactions and possible stacking-induced changes of the intralayer bonding. This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime.
3,969 citations
TL;DR: Above an annealing temperature of 300 °C, chemically exfoliated MoS2 exhibit prominent band gap photoluminescence, similar to mechanically exfoliate monolayers, indicating that their semiconducting properties are largely restored.
Abstract: A two-dimensional crystal of molybdenum disulfide (MoS2) monolayer is a photoluminescent direct gap semiconductor in striking contrast to its bulk counterpart. Exfoliation of bulk MoS2 via Li intercalation is an attractive route to large-scale synthesis of monolayer crystals. However, this method results in loss of pristine semiconducting properties of MoS2 due to structural changes that occur during Li intercalation. Here, we report structural and electronic properties of chemically exfoliated MoS2. The metastable metallic phase that emerges from Li intercalation was found to dominate the properties of as-exfoliated material, but mild annealing leads to gradual restoration of the semiconducting phase. Above an annealing temperature of 300 °C, chemically exfoliated MoS2 exhibit prominent band gap photoluminescence, similar to mechanically exfoliated monolayers, indicating that their semiconducting properties are largely restored.
3,403 citations
TL;DR: Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS(2) monolayer, and TEM images verify that the synthesized MoS (2) sheets are highly crystalline.
Abstract: Large-area MoS(2) atomic layers are synthesized on SiO(2) substrates by chemical vapor deposition using MoO(3) and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS(2) monolayer. The TEM images verify that the synthesized MoS(2) sheets are highly crystalline.
3,088 citations
TL;DR: In this paper, high efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet light have been obtained through the use of an InGaN active layer instead of a GaN active layers.
Abstract: REVIEW High-efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet light have been obtained through the use of an InGaN active layer instead of a GaN active layer. The localized energy states caused by In composition fluctuation in the InGaN active layer are related to the high efficiency of the InGaN-based emitting devices. The blue and green InGaN quantum-well structure light-emitting diodes with luminous efficiencies of 5 and 30 lumens per watt, respectively, can be made despite the large number of threading dislocations (1 x 10(8) to 1 x 10(12) cm-2). Epitaxially laterally overgrown GaN on sapphire reduces the number of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate. InGaN multi-quantum-well structure laser diodes formed on the GaN layer above the SiO2 mask area can have a lifetime of more than 10,000 hours. Dislocations increase the threshold current density of the laser diodes.
1,675 citations