Journal ArticleDOI
Ultra Low-Temperature Growth of High-Integrity Thin Gate Oxide Films by Low-Energy Ion-Assisted Oxidation
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In this article, high integrity thin gate oxide films have been grown at a temperature as low as 450° C by direct oxidation of silicon, where the bombardment of the silicon surface by low energy ions of argon and oxygen mixed plasma is utilized to activate the oxidation process.Abstract:
High integrity thin gate oxide films have been grown at a temperature as low as 450° C by direct oxidation of silicon. The bombardment of the silicon surface by low energy ions of argon and oxygen mixed plasma is utilized to activate the oxidation process. Dielectric breakdown field intensity of the oxide film of 12 MV/cm is obtained by the MOS capacitor evaluation. The precise control of the bombarding energy is essential in achieving the high-integrity thin gate oxide films.read more
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Patent
Ion-assisted oxidation methods and the resulting structures
Li Li,Pai-Hung Pan +1 more
TL;DR: In this article, the oxide layer may overlie the substrate and is proximate a gate structure on the substrate, and the at least one oxidant may be oxygen, water, ozone, or hydrogen peroxide, or a mixture thereof.
Journal ArticleDOI
New plasma source with low electron temperature for fabrication of an insulating barrier in ferromagnetic tunnel junctions
TL;DR: In this article, a new plasma source, characterized as low electron temperature of 1 eV and high density of 10/sup 12/ cm/sup -3/, is introduced to the Al oxidation process in the magnetic tunnel junction (MTJ) fabrication.
Journal ArticleDOI
Mechanism of Oxidation of Si Surfaces Exposed to O2/Ar Microwave-Excited Plasma
TL;DR: In this paper, the Jorgensen-Mott model was used to explain the plasma oxidation of 200mm-diameter Si wafer surface at low temperature (400 °C) with use of high-density microwave plasma in O2/Ar gas.
Journal ArticleDOI
Magnetotransport Properties of Co - Fe / Al-O / Co - Fe Tunnel Junctions Oxidized with Microwave Excited Plasma
Kazuhiro Nishikawa,Satoshi Ogata,Toshihiro Shoyama,Wan-Sick Cho,Tae-Sick Yoon,Masakiyo Tsunoda,Migaku Takahashi +6 more
TL;DR: In this article, the effect of immiscible element addition to the Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed.
Journal ArticleDOI
Low-temperature processing of semiconductor surfaces by use of a high-density microwave plasma
TL;DR: In this paper, a new microwave plasma oxidation apparatus with unique features addressing the aforementioned low-temperature process is described, and the oxide growth rate was studied as a function of time, gaseous ambient, pressure, applied microwave power and silicon substrate parameters to determine crystallographic oxidation rate anisotropy and dopant concentration-dependent oxidation at temperatures much below 400 °C.