Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance
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...NW FETs show excellent gate control, near-ideal subthreshold behavior, high ION/IOFF ratio, and high drive current [21], [27]–[ 29 ]....
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...The inset shows the NW channel before poly-gate deposition. Reprinted with permission from [ 29 ]....
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...(b) Drain current characteristics showing that high drive currents are possible in GAA FETs. Reprinted with permission from [ 29 ]....
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...The wires have been carefully released by etching away the grown oxide in dilute HF [28], [ 29 ]....
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...For instance, we obtained ION values of 2.4 and 1.3 mA/μm, DIBL values of 8 and 13 mV/V, and SS of 60 and 65 mV/dec for NMOS and PMOS, respectively [ 29 ]....
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