Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance
Citations
2 citations
Cites background from "Ultra-Narrow Silicon Nanowire Gate-..."
...NW devices with channels of just a few nanometers in diameter have already been demonstrated [2, 3, 4, 5]....
[...]
2 citations
Cites background from "Ultra-Narrow Silicon Nanowire Gate-..."
...gate-all-around (GAA) silicon nanowire transistor (SNWT), is considered an important candidate for future CMOS scaling beyond the 32-nm node [1]–[3]....
[...]
...ones reported earlier in [3] and [8], respectively....
[...]
2 citations
Cites background or methods or result from "Ultra-Narrow Silicon Nanowire Gate-..."
...The QCSE can be minimized by orienting heterojunctions along nonpolar orientations orthogonal to the c-direction, including the [11-20] a-direction and [1-100] m-direction (Figure 2-7c)....
[...]
...The majority of nanowires grew in the [1-100] m-direction on a-GaN substrates, while the majority grew in the [0001] c-direction on c-GaN substrates, similar to the results for GaN nanowires....
[...]
...In nanowires, this can be achieved by fabricating radial heterojunctions around c-oriented nanowires or axial heterojunctions along nonpolar-oriented nanowires, including the [1-100] m-direction and the [11-20] a-direction, although other potential nonpolar orientations do exist....
[...]
...Both Au- and Ni-seeded nanowires grew preferentially in the [1-100] m-direction, as confirmed by selected area diffraction (SAD)....
[...]
...As with previous GaN studies, r-sapphire substrates coated with 1 nm Au films produced GaN nanowires orientated in the [1-100] m-...
[...]
2 citations
Cites background from "Ultra-Narrow Silicon Nanowire Gate-..."
...Nanowires with various channel lengths and cross sections have been fabricated [3, 4, 5]....
[...]
2 citations
References
1,407 citations
605 citations
551 citations
477 citations
252 citations