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Journal ArticleDOI

Ultrahigh-Density Nanowire Arrays Grown in Self-Assembled Diblock Copolymer Templates

15 Dec 2000-Science (American Association for the Advancement of Science)-Vol. 290, Iss: 5499, pp 2126-2129
TL;DR: A simple, robust, chemical route to the fabrication of ultrahigh-density arrays of nanopores with high aspect ratios using the equilibrium self-assembled morphology of asymmetric diblock copolymers is shown.
Abstract: We show a simple, robust, chemical route to the fabrication of ultrahigh-density arrays of nanopores with high aspect ratios using the equilibrium self-assembled morphology of asymmetric diblock copolymers. The dimensions and lateral density of the array are determined by segmental interactions and the copolymer molecular weight. Through direct current electrodeposition, we fabricated vertical arrays of nanowires with densities in excess of 1.9 x 10(11) wires per square centimeter. We found markedly enhanced coercivities with ferromagnetic cobalt nanowires that point toward a route to ultrahigh-density storage media. The copolymer approach described is practical, parallel, compatible with current lithographic processes, and amenable to multilayered device fabrication.

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Citations
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Journal ArticleDOI
TL;DR: In this article, a method was used for preparing gold NRs with aspect ratios ranging from 1.5 to 4.5 for which the surface plasmon absorption maxima are between 600 and 1300 nm.
Abstract: A method is used for preparing gold NRs with aspect ratios ranging from 1.5 to 10 for which the surface plasmon absorption maxima are between 600 and 1300 nm. This method has been adapted from a previously published seed-mediated growth method (Jana et al. Adv. Mater. 2001, 13, 1389). The disadvantages and limitations of the earlier method (i.e., formation of noncylindrical NRs, φ-shaped particles, and formation of a large fraction of spherical particles) have been overcome by use of a hexadecyltrimethylammonium bromide (CTAB)-capped seed instead of a citrate-capped one. In a single-component surfactant system, the silver content of the growth solution was used to grow NRs to a desired length. This results in reproducible formation of NRs with aspect ratios ranging from 1.5 to 4.5. To grow longer NRs with aspect ratios ranging from 4.6 to 10, a binary surfactant mixture composed of benzyldimethylhexadecylammoniumchloride (BDAC) and CTAB was used. NRs are grown in this mixture either by aging or by additio...

4,645 citations

Journal ArticleDOI
15 Dec 2000-Science
TL;DR: It is shown that the use of substrate surface energy patterning to direct the flow of water-based conducting polymer inkjet droplets enables high-resolution definition of practical channel lengths of 5 micrometers, and high mobilities were achieved.
Abstract: Direct printing of functional electronic materials may provide a new route to low-cost fabrication of integrated circuits. However, to be useful it must allow continuous manufacturing of all circuit components by successive solution deposition and printing steps in the same environment. We demonstrate direct inkjet printing of complete transistor circuits, including via-hole interconnections based on solution-processed polymer conductors, insulators, and self-organizing semiconductors. We show that the use of substrate surface energy patterning to direct the flow of water-based conducting polymer inkjet droplets enables high-resolution definition of practical channel lengths of 5 micrometers. High mobilities of 0.02 square centimeters per volt second and on-off current switching ratios of 10 5 were achieved.

3,190 citations

Journal ArticleDOI
TL;DR: Inkjet printing has been used as a free-form fabrication method for building three-dimensional parts and is being explored as a way of printing electrical and optical devices, especially where these involve organic components.
Abstract: Inkjet printing is familiar as a method of printing text and images onto porous surfaces. In the last few years it has been used as a free-form fabrication method for building three-dimensional parts and is being explored as a way of printing electrical and optical devices, especially where these involve organic components. Inkjet printers are also being used to produce arrays of proteins and nucleic acids. The need for a versatile inkjet technology for free-forming materials and for multilayer devices raises a number of materials problems that do not apply to conventional printing of images. Higher resolutions will be needed if organic transistors are to be printed. Also, it must be possible to print pinhole-free layers to avoid shorting of devices. Multiple layers must be printed such that they mix and react to form a single material or such that they form discrete unmixed layers. Printing on dense rather than porous substrates will be the norm. This article reviews the range of materials that has been ...

1,774 citations

Journal ArticleDOI
TL;DR: Methods for the preparation of mesoporous carbon materials with extremely high surface areas and ordered mesostructures, with potential applications as catalysts, separation media, and advanced electronic materials in many scientific disciplines are developed.
Abstract: Porous carbon materials are of interest in many applications because of their high surface area and physicochemical properties. Conventional syntheses can only produce randomly porous materials, with little control over the pore-size distributions, let alone mesostructures. Recent breakthroughs in the preparation of other porous materials have resulted in the development of methods for the preparation of mesoporous carbon materials with extremely high surface areas and ordered mesostructures, with potential applications as catalysts, separation media, and advanced electronic materials in many scientific disciplines. Current syntheses can be categorized as either hard-template or soft-template methods. Both are examined in this Review along with procedures for surface functionalization of the carbon materials obtained.

1,716 citations

Journal ArticleDOI
24 Jul 2003-Nature
TL;DR: The integration of thin films of block copolymer with advanced lithographic techniques to induce epitaxial self-assembly of domains are demonstrated and illustrate how hybrid strategies to nanofabrication allow for molecular level control in existing manufacturing processes.
Abstract: Parallel processes for patterning densely packed nanometre-scale structures are critical for many diverse areas of nanotechnology. Thin films of diblock copolymers can self-assemble into ordered periodic structures at the molecular scale (approximately 5 to 50 nm), and have been used as templates to fabricate quantum dots, nanowires, magnetic storage media, nanopores and silicon capacitors. Unfortunately, perfect periodic domain ordering can only be achieved over micrometre-scale areas at best and defects exist at the edges of grain boundaries. These limitations preclude the use of block-copolymer lithography for many advanced applications. Graphoepitaxy, in-plane electric fields, temperature gradients, and directional solidification have also been demonstrated to induce orientation or long-range order with varying degrees of success. Here we demonstrate the integration of thin films of block copolymer with advanced lithographic techniques to induce epitaxial self-assembly of domains. The resulting patterns are defect-free, are oriented and registered with the underlying substrate and can be created over arbitrarily large areas. These structures are determined by the size and quality of the lithographically defined surface pattern rather than by the inherent limitations of the self-assembly process. Our results illustrate how hybrid strategies to nanofabrication allow for molecular level control in existing manufacturing processes.

1,665 citations


Cites background from "Ultrahigh-Density Nanowire Arrays G..."

  • ...on the unpatterned (1) and underexposed (3) regions....

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  • ...The structure of the block-copolymer film on these areas (see area (3) in Fig....

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  • ...In underexposed areas (see area (3) in Fig....

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  • ...Regions (1), (2) and (3) in b delineate unpatterned, overexposed, and underexposed areas of the photoresist, respectively....

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  • ...Regions (1), (2) and (3) in c show the block-copolymer morphologies observed over corresponding areas....

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References
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Journal ArticleDOI
09 Jun 1995-Science
TL;DR: A highly ordered metal nanohole array (platinum and gold) was fabricated by a two-step replication of the honeycomb structure of anodic porous alumina that showed a notable color change compared with bulk gold.
Abstract: A highly ordered metal nanohole array (platinum and gold) was fabricated by a two-step replication of the honeycomb structure of anodic porous alumina. Preparation of the negative porous structure of porous alumina followed by the formation of the positive structure with metal resulted in a honeycomb metallic structure. The metal hole array of the film has a uniform, closely packed honeycomb structure approximately 70 nanometers in diameter and from 1 to 3 micrometers thick. Because of its textured surface, the metal hole array of gold showed a notable color change compared with bulk gold.

4,892 citations

Journal ArticleDOI
22 Jan 1999-Science
TL;DR: The synthesis of massive arrays of monodispersed carbon nanotubes that are self-oriented on patterned porous silicon and plain silicon substrates is reported and the mechanisms of nanotube growth and self-orientation are elucidated.
Abstract: The synthesis of massive arrays of monodispersed carbon nanotubes that are self-oriented on patterned porous silicon and plain silicon substrates is reported. The approach involves chemical vapor deposition, catalytic particle size control by substrate design, nanotube positioning by patterning, and nanotube self-assembly for orientation. The mechanisms of nanotube growth and self-orientation are elucidated. The well-ordered nanotubes can be used as electron field emission arrays. Scaling up of the synthesis process should be entirely compatible with the existing semiconductor processes, and should allow the development of nanotube devices integrated into silicon technology.

3,093 citations

Journal ArticleDOI
19 Nov 1999-Science
TL;DR: A molecule containing a nitroamine redox center was used in the active self-assembled monolayer in an electronic device that exhibited negative differential resistance and an on-off peak-to-valley ratio in excess of 1000:1.
Abstract: A molecule containing a nitroamine redox center (2'-amino-4-ethynylphenyl-4'-ethynylphenyl-5'-nitro-1-benzenethiol) was used in the active self-assembled monolayer in an electronic device. Current-voltage measurements of the device exhibited negative differential resistance and an on-off peak-to-valley ratio in excess of 1000:1.

2,295 citations

Journal ArticleDOI
30 May 1997-Science
TL;DR: In this paper, dense periodic arrays of holes and dots have been fabricated in a silicon nitride-coated silicon wafer and transferred directly to the underlying silicon oxide layer by two complementary techniques.
Abstract: Dense periodic arrays of holes and dots have been fabricated in a silicon nitride–coated silicon wafer. The holes are 20 nanometers across, 40 nanometers apart, and hexagonally ordered with a polygrain structure that has an average grain size of 10 by 10. Spin-coated diblock copolymer thin films with well-ordered spherical or cylindrical microdomains were used as the templates. The microdomain patterns were transferred directly to the underlying silicon nitride layer by two complementary techniques that resulted in opposite tones of the patterns. This process opens a route for nanometer-scale surface patterning by means of spontaneous self-assembly in synthetic materials on length scales that are difficult to obtain by standard semiconductor lithography techniques.

1,921 citations

Journal ArticleDOI
TL;DR: In this article, self-organized hexagonal pore arrays with a 50-420 nm interpore distance in anodic alumina have been obtained by anodizing aluminum in oxalic, sulfuric, and phosphoric acid solutions.
Abstract: Self-organized hexagonal pore arrays with a 50–420 nm interpore distance in anodic alumina have been obtained by anodizing aluminum in oxalic, sulfuric, and phosphoric acid solutions. Hexagonally ordered pore arrays with distances as large as 420 nm were obtained under a constant anodic potential in phosphoric acid. By comparison of the ordered pore formation in the three types of electrolyte, it was found that the ordered pore arrays show a polycrystalline structure of a few micrometers in size. The interpore distance increases linearly with anodic potential, and the relationship obtained from disordered porous anodic alumina also fits for periodic pore arrangements. The best ordered periodic arrangements are observed when the volume expansion of the aluminum during oxidation is about 1.4 which is independent of the electrolyte. The formation mechanism of ordered arrays is consistent with a previously proposed mechanical stress model, i.e., the repulsive forces between neighboring pores at the metal/oxide interface promote the formation of hexagonally ordered pores during the oxidation process.

1,496 citations