Journal ArticleDOI
Ultralow Current Switching in Flexible Hybrid PVP:MoS 2 /HfO x Bilayer Devices
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TLDR
In this article, an ultralow power consuming and forming-free hybrid flexible resistive random access memory device fabricated with poly(4-vinylphenol) (PVP):MoS2 composite and HfO x bilayer.Abstract:
We report an ultralow power consuming and forming-free hybrid flexible resistive random access memory device fabricated with poly(4-vinylphenol) (PVP):MoS2 composite and HfO x bilayer, exhibiting threshold switching with ultralow ON-current of 500 nA. While the higher concentration of MoS2 imparted the higher leakage current in the devices, the lower concentration devices exhibited decent switching with set and reset powers as low as 270 and 0.1 nW, respectively. The ultralow switching current indicates the formation of multiple weak nanosized conductive filaments created due to electromigration of Ag atoms under external bias. Moreover, heating temperature-dependent study of switching behavior confirms the metallic nature of the filament as the low resistance state (LRS) current falls significantly with rising temperature. Furthermore, these devices exhibited remarkable mechanical strength on flexible substrate with demonstration of nondestructive switching characteristics at a bending radius as low as 2.5 mm and after 100 consecutive compressive and tensile strain cycles at ±5-mm radius. The ultralow switching current with high flexibility indicates the capability of devices for advancement toward future low-power flexible memories and computing systems.read more
Citations
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Journal ArticleDOI
Bipolar resistive switching properties of TiO x /graphene oxide doped PVP based bilayer ReRAM
TL;DR: In this paper , the bipolar resistive switching behavior of a 2D material such as Graphene Oxide (GO):poly(4-vinylphenol) (PVP) based bilayer in ReRAM devices is demonstrated.
Journal ArticleDOI
Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor
Tangyou Sun,Hui Juan Shi,Shuai Gao,Zhiping Zhou,Zhiqiang Yu,Wenjing Guo,Haiou Li,Fabi Zhang,Zhimou Xu,Xiaowen Zhang +9 more
TL;DR: In this paper , the interaction between polyvinyl alcohol (PVA) and two-dimensional material molybdenum disulfide (MoS2) with different mixing ratios was investigated.
Journal ArticleDOI
Ovonic threshold switching device and its application to logic gate function and steep slope in field effect transistors
TL;DR: In this paper , the poly(p-vinylphenol) (PVP)-based ovonic threshold switching devices were used in the design of logic gates to realize the function of AND and OR.
Journal ArticleDOI
Resistive switching behavior of TiO2/(PVP:MoS2) nanocomposite hybrid bilayer in rigid and flexible RRAM devices
Journal ArticleDOI
Halide perovskite memristor with ultra-high-speed and robust flexibility for artificial neuron applications
Lingzhi Tang,Yang Huang,Chen Wang,Zhen Xuan Zhao,Yiming Yang,Jiming Bian,Huaqiang Wu,Zengxing Zhang,David Wei Zhang +8 more
TL;DR: In this paper , a halide perovskite based flexible threshold-switched memristor with ultra-high speed was used as an artificial neuron that exhibits excellent leaky integrate-and-fire dynamics and strength-modulated spike frequency response performance.
References
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Journal ArticleDOI
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Journal ArticleDOI
Complementary Resistive Switching Observed in Graphene Oxide-Based Memory Device
Kaixi Shi,Zhongqiang Wang,Haiyang Xu,Zhe Xu,Xiaohan Zhang,Xiaoning Zhao,Weizhen Liu,Guochun Yang,Yichun Liu +8 more
TL;DR: In this paper, complementary resistive switching (CRS) was demonstrated in a single-stack graphene oxide (GO) memory cell for the first time, where the high resistance state can be distinguished into 0 and 1 states by different bias polarities.
Journal ArticleDOI
Nonvolatile WORM and rewritable multifunctional resistive switching memory devices from poly(4-vinyl phenol) and 2-amino-5-methyl-1,3,4-thiadiazole composite
Yanmei Sun,Dianzhong Wen +1 more
TL;DR: In this article, a multifunctional resistive switching memory device with the typical sandwich structure of Al/Poly(4-vinylphenol) (PVP)+2-Amino-5-methyl-1,3,4-thiadiazole/Al is fabricated.