scispace - formally typeset
Search or ask a question
Journal ArticleDOI

Ultralow Current Switching in Flexible Hybrid PVP:MoS 2 /HfO x Bilayer Devices

03 Jul 2020-IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers (IEEE))-Vol. 67, Iss: 8, pp 3472-3477
TL;DR: In this article, an ultralow power consuming and forming-free hybrid flexible resistive random access memory device fabricated with poly(4-vinylphenol) (PVP):MoS2 composite and HfO x bilayer.
Abstract: We report an ultralow power consuming and forming-free hybrid flexible resistive random access memory device fabricated with poly(4-vinylphenol) (PVP):MoS2 composite and HfO x bilayer, exhibiting threshold switching with ultralow ON-current of 500 nA. While the higher concentration of MoS2 imparted the higher leakage current in the devices, the lower concentration devices exhibited decent switching with set and reset powers as low as 270 and 0.1 nW, respectively. The ultralow switching current indicates the formation of multiple weak nanosized conductive filaments created due to electromigration of Ag atoms under external bias. Moreover, heating temperature-dependent study of switching behavior confirms the metallic nature of the filament as the low resistance state (LRS) current falls significantly with rising temperature. Furthermore, these devices exhibited remarkable mechanical strength on flexible substrate with demonstration of nondestructive switching characteristics at a bending radius as low as 2.5 mm and after 100 consecutive compressive and tensile strain cycles at ±5-mm radius. The ultralow switching current with high flexibility indicates the capability of devices for advancement toward future low-power flexible memories and computing systems.
Citations
More filters
Journal ArticleDOI
TL;DR: In this paper , the bipolar resistive switching behavior of a 2D material such as Graphene Oxide (GO):poly(4-vinylphenol) (PVP) based bilayer in ReRAM devices is demonstrated.
Abstract: In this paper, firstly, some recently explored promising materials and processes for resistive random access memory (ReRAM) devices with bipolar switching mechanism along with their performance are discussed. Further, resistive switching behaviour of TiO x /graphene oxide (GO):poly(4-vinylphenol) (PVP) based bilayer in ReRAM devices is demonstrated. It was found that bipolar resistive switching behaviour is significantly enhanced by embedding 2D material such as GO in the organic polymer acting as switching layer. ReRAM devices with Ag/PVP:GO/TiO x /fluorine doped tin oxide (FTO) structure exhibited high ON/OFF current ratio (>103), low voltage operation, and high retention time. Bipolar resistive switching from these engineered active layers will have great potential for future large area and sustainable electronics.

5 citations

Journal ArticleDOI
TL;DR: In this paper , the interaction between polyvinyl alcohol (PVA) and two-dimensional material molybdenum disulfide (MoS2) with different mixing ratios was investigated.
Abstract: Reliability of nonvolatile resistive switching devices is the key point for practical applications of next-generation nonvolatile memories. Nowadays, nanostructured organic/inorganic heterojunction composites have gained wide attention due to their application potential in terms of large scalability and low-cost fabrication technique. In this study, the interaction between polyvinyl alcohol (PVA) and two-dimensional material molybdenum disulfide (MoS2) with different mixing ratios was investigated. The result confirms that the optimal ratio of PVA:MoS2 is 4:1, which presents an excellent resistive switching behavior. Moreover, we propose a resistive switching model of Ag/ZnO/PVA:MoS2/ITO bilayer structure, which inserts the ZnO as the protective layer between the electrode and the composite film. Compared with the device without ZnO layer structure, the resistive switching performance of Ag/ZnO/PVA:MoS2/ITO was improved greatly. Furthermore, a large resistive memory window up to 104 was observed in the Ag/ZnO/PVA:MoS2/ITO device, which enhanced at least three orders of magnitude more than the Ag/PVA:MoS2/ITO device. The proposed nanostructured Ag/ZnO/PVA:MoS2/ITO device has shown great application potential for the nonvolatile multilevel data storage memory.

4 citations

Journal ArticleDOI
TL;DR: In this paper , the poly(p-vinylphenol) (PVP)-based ovonic threshold switching devices were used in the design of logic gates to realize the function of AND and OR.

3 citations

Journal ArticleDOI
TL;DR: In this paper , a halide perovskite based flexible threshold-switched memristor with ultra-high speed was used as an artificial neuron that exhibits excellent leaky integrate-and-fire dynamics and strength-modulated spike frequency response performance.
Abstract: We report a halide perovskite based flexible threshold-switched memristor with ultra-high speed as an artificial neuron that exhibits excellent leaky integrate-and-fire dynamics and strength-modulated spike frequency response performance.

2 citations

References
More filters
Journal ArticleDOI
TL;DR: The memristive device based on an Al/WS2 NSs:PMMA/ITO device exhibited the bipolar switching characteristics with low power consumption and great performance in the bent state with radii of the curvatures of 20 and 10 mm.
Abstract: This paper reports data for the electrical characteristics and the operating mechanisms of flexible resistive switching devices based on WS2 nanosheets (NSs) dispersed in a poly(methyl methacrylate) (PMMA) layer. The ON/OFF ratio of the memristive device based on an Al/WS2 NSs:PMMA/indium tin oxides (ITO) structure was approximately 5.9 × 104. The memristive device based on the WS2 NSs also exhibited the bipolar switching characteristics with low power consumption and great performance in the bent state with radii of the curvatures of 20 and 10 mm. Especially, the results obtained after bending the device were similar to those observed before bending. The device showed nearly the same ON/OFF ratio for a retention time of 1 × 104 sec, and the number of endurance cycles was greater than 1 × 102. The set voltage and the reset voltage probability distributions for the setting and the resetting processes indicated bipolar switching characteristics. The operating and the carrier transport mechanisms of the Al/WS2 NSs:PMMA/ITO device could be explained based on the current-voltage results with the aid of an energy band diagram.

21 citations

Journal ArticleDOI
TL;DR: This research successfully presents the feasibility of PVP/PMF atomic switches for flexible integrated circuits for next-generation electronic applications.
Abstract: In this study, we demonstrate a high-performance solid polymer electrolyte (SPE) atomic switching device with low SET/RESET voltages (0.25 and -0.5 V, respectively), high on/off-current ratio (105), excellent cyclic endurance (>103), and long retention time (>104 s), where poly-4-vinylphenol (PVP)/poly(melamine-co-formaldehyde) (PMF) is used as an SPE layer. To accomplish these excellent device performance parameters, we reduce the off-current level of the PVP/PMF atomic switching device by improving the electrical insulating property of the PVP/PMF electrolyte through adjustment of the number of cross-linked chains. We then apply a titanium buffer layer to the PVP/PMF switching device for further improvement of bipolar switching behavior and device stability. In addition, we first implement SPE atomic switch-based logic AND and OR circuits with low operating voltages below 2 V by integrating 5 × 5 arrays of PVP/PMF switching devices on the flexible substrate. In particular, this low operating voltage of our logic circuits was much lower than that (>5 V) of the circuits configured by polymer resistive random access memory. This research successfully presents the feasibility of PVP/PMF atomic switches for flexible integrated circuits for next-generation electronic applications.

20 citations

Journal ArticleDOI
TL;DR: In this paper, a flexible resistive random access memory (RRAM) was developed with a PVP:GO equivolume solution spin-coated and atomic layer deposited ultrathin HfO x as an active bilayer.
Abstract: Resistive switching behavior of poly (4-vinylphenol):graphene oxide (PVP:GO) composite and ultrathin HfO x hybrid bilayer was explored for developing high-performance flexible resistive random access memory (RRAM) devices. These devices, fabricated with a PVP:GO equivolume solution spin-coated and atomic layer deposited ultrathin HfO x as an active bilayer, exhibited excellent bipolar switching behavior with set and reset voltages as low as 0.6 and −1.46 V, ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ of >105, and ac and dc switching endurance of over 1400 and 800 cycles, respectively. The same device configuration realized over a flexible polyethylene terephthalate (PET) substrate exhibited a memory window of >103 even after undergoing large mechanical strain (correspoding to a 5-mm bending radius). In addition, after 150 cumulative cycles of consecutive tensile and compressive strain at a 5-mm bending radius, flexible RRAMs demonstrated a clear memory window of $4\times 10^{{3}}$ for 104 s. Overall, the incorporation of GO into the PVP solution resulted in achieving better control over conductive filament (CF) growth and, therefore, improved repeatability and reliability. This article indicates that the strategy of incorporating composite and organic–inorganic active bilayer can lead toward the development of high-performance flexible RRAMs.

19 citations


"Ultralow Current Switching in Flexi..." refers background in this paper

  • ...higher values signify better reliability [15]....

    [...]

  • ...In recent times, hybrid RRAMs have gained significant attention, mainly due to their reliable and low-power switching operations [5], [14], [15]....

    [...]

Journal ArticleDOI
TL;DR: In this paper, a novel nano-architecture based on a complementary resistive switch (CRS) construct for smart sensor search engines is presented, which is a reduction in power consumption by almost 50% when compared with the more conventional architectures.
Abstract: Sensory search engines in a variety of applications, including DNA sequencing, are beginning to influence the way new search nanoarchitectures are constructed. This paper presents a novel nanoarchitecture based on a complementary resistive switch (CRS) construct for smart sensor search engines. Detailed operational principles of CRS, CRS-based memory array, and image matching applications using the Hamming distance measure are presented along with backing simulation results. The proposed scheme draws upon the inherent windowing behavior of fabricated CRS and hence, the duty cycle thus leading to a power dissipation of 115 nW/b, which is a reduction in power consumption by almost 50% when compared with the more conventional architectures. The variation on the match line is 100 mV/Hamming distance, providing a stable reference source for comparison input and stored data.

17 citations