Ultrasensitive Detection of Mercury Ions Under UV Illumination of MoS 2 Functionalized AlGaN/GaN Transistor
23 Oct 2020-IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers (IEEE))-Vol. 67, Iss: 12, pp 5693-5700
TL;DR: In this article, the MoS2 functionalized AlGaN/GaN high-electron mobility transistor (HEMT) was utilized for the first time to detect toxic mercury (Hg2+) ions under ultraviolet (UV) illumination.
Abstract: In this work, the MoS2 functionalized AlGaN/GaN high-electron mobility transistor (HEMT) was utilized for the first time to detect toxic mercury (Hg2+) ions under ultraviolet (UV) illumination. The AlGaN/GaN HEMT was fabricated on the sapphire substrate, and corresponding structural and electrical properties were investigated. Subsequently, the optimization of MoS2 concentration for device functionalization was carried out by performing sensing analysis of Hg2+ ions on three devices, and it was observed that the 20 mg/mL concentration of MoS2 is optimum for the detection of Hg2+ ions. Furthermore, the detection of Hg2+ ions was performed under UV exposure, where the developed sensor showed much-improved sensitivity of $548.07~\mu \text{A}$ /ppb compared with normal light. The comparative analysis indicates the increase of three orders of magnitude in sensitivity under UV irradiation, and it is the highest sensitivity ever observed by the AlGaN/GaN HEMT sensor for Hg2+ ion detection. Moreover, the sensor also exhibits the limit of detection (LoD) of 6.14 parts per trillion (ppt) that is much lower than the World Health Organization (WHO) standard limit for Hg2+ ions in drinking water. Due to the photoexcitation process, the generation of electron–hole pairs provides more binding sites on the MoS2 surface, which results in the ultrasensitive detection of the Hg2+ ions at trace and ultratrace levels.
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TL;DR: In this article, the authors introduce the recent trends in heavy metal ion sensing with semiconductor devices, including ion-sensitive field effect transistors (ISFETs) and AlGaN/GaN high electron mobility transistors(HEMTs) and semiconductor materials like graphene, two-dimensional metal dichalcogenides, decorated with different nanoparticles with appropriate functionalization.
Abstract: Heavy metal ions are highly toxic, carcinogens, and non-biodegradable in nature and pollute most water resources that lead to severe health-related issues. It is essential to develop highly sensitive, selective, rapid, and accurate approaches for their detection in water. Semiconducting devices and materials with micro and nanostructures have been featured with fast response time, low power, high sensitivity, low detection limit. This review concisely introduces the recent trends in heavy metal ion sensing with semiconductor devices, including ion-sensitive field-effect transistors (ISFETs) and AlGaN/GaN high electron mobility transistors (HEMTs) and semiconductor materials like graphene, two-dimensional metal dichalcogenides, decorated with different nanoparticles with appropriate functionalization.
20 citations
TL;DR: In this article , the authors have demonstrated a highly sensitive platform for real-time detection of mercury (Hg 2+ ) ions after successfully making silver nanowires (AgNWs)-MoS.
Abstract: We have demonstrated a highly sensitive novel platform for real-time detection of mercury (Hg 2+ ) ions after successfully making silver nanowires (AgNWs)-MoS 2 nanocomposite and functionalizing it over ungated AlGaN/GaN high-electron-mobility transistor (HEMT). The AlGaN/GaN HEMT structures were grown over the sapphire substrate using molecular beam epitaxy. AgNWs-MoS 2 nanocomposites were optimized for the device functionalization and 1:4 ratio was found highly sensitive for Hg 2+ ions. The sensor exhibits high sensitivity toward Hg 2+ ions of 1.604 mA/ppb and calculated its Limit of Detection (LoD) up to the range of 20 parts per trillion. The observed sensitivity is highest among previously reported AlGaN/GaN fabricated HEMT-based sensors for mercury (Hg 2+ ) ions detection and is well below the standard permissible limits as set by World Health Organization (WHO) and Environmental Protection Agency (EPA). The enhancement in sensitivity is due to the enhanced surface to volume ratio of AgNW-MoS 2 nanocomposite and the highly conductive nature of AgNWs incorporated in MoS 2 . Moreover, we also performed sensing on real water samples of tap water and lake water. Furthermore, we showed the smart sensing capability of our developed sensor by illustrating the Internet of Things (IoT)-enabled system for next-generation heavy metal ion sensing.
3 citations
TL;DR: In this article , the authors investigated the feasibility of nano gap embedded AlGaN/GaN HEMT to sense antibody-antigen reaction in a typical antibody Ixodes ricinus immunosuppressor (anti-Iris) protein in nano cavity.
Abstract: This study investigates the feasibility of Nano gap embedded AlGaN/GaN HEMT to sense antibody-antigen reaction. The sensor can detect the binding response of a typical antibody Ixodes ricinus immunosuppressor (anti-Iris) protein in Nano cavity. The sensor performance is analyzed by the change in electrical characteristics by the anti-iris antibody and iris antigen interaction. The device performance is optimized independently by varying cavity thickness, cavity length, biomolecule length, and Al composition. The output drain current recorded at V DS = 10V was linearly incremented with the length of the bio layers. The increase in cavity thickness and length will reduce the sensitivity due to a reduction in the cavity fill-in factor. The maximum sensitivity obtained is 169% at a cavity thickness of 10 nm and cavity length of 100 nm with 30% Al content. Silvaco Atlas simulation software has simulated and optimized the proposed device structure. • The antigen-antibody reaction with thiol modified surface has been analyzed using AlGaN/GaN HEMT. • The effect of cavity thickness, cavity length, and biolayers length has been analyzed. • The effect of cavity fill factor has been analyzed by changing the biolayers length to analyze sensor's performance. • The maximum drain current sensitivity obtained is 169%.
1 citations
TL;DR: In this paper, a novel visual sensing platform for the detection of mercury (II) ion (Hg2+) was developed by using a graphene quantum dots functionalized gold nanoparticles nanocomposite system.
Abstract: Owing to their detection performance without the use of any instruments, visual sensing based on gold nanoparticles has become important and attractive for a wide range of applications in various fields, especially in sensing systems. In this study, a novel visual sensing platform for the detection of mercury (II) ion (Hg2+) was developed by using a graphene quantum dots functionalized gold nanoparticles nanocomposite system. To achieve the goal of selective, sensitive, and rapid sensing of Hg2+, gold nanoparticles (AuNPs) were combined with graphene quantum dots (GQDs). GQDs was assembled on AuNPs due to the strong interaction with the terminal amino groups of GQDs. A new procedure for the selective and sensitive detection of Hg2+ has been unveiled based on the prevention of aggregation of AuNPs functionalized with GQDs in the presence of analytes (i.e. Hg2+).
TL;DR: A comprehensive review on the AlGaN/GaN HEMT based solid-state microsensors used for detection of gases, biomarkers, ions and high energy radiation which has application in environmental, clinical and water quality monitoring besides medical research is provided in this article .
Abstract: AlGaN/GaN high electron mobility transistors (HEMTs) demonstrate exceptional properties desired for sensing regime applications due to their extraordinary chemical stability, non-toxicity, surface amenable to functionalization, high surface charge sensitivity and high temperature endurance. This report provides a comprehensive review on the AlGaN/GaN HEMT based solid-state microsensors used for detection of gases, biomarkers, ions and high energy radiation which has application in environmental, clinical and water quality monitoring besides medical research. The material properties and fabrication aspects are highlighted first and then sensing mechanisms for different applications and various device design advancements during past decades in literature are discussed along with the modelling and simulation perspectives. There are some reports which discuss AlGaN/GaN HEMT for a particular application only and thus there was a need for a review which discusses various aspects and applications in one study to render an overall bird's eye view of potential of this material system.
References
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TL;DR: In this article, the basic principles of x-ray diffraction of thin films and areas of special current interest, such as analysis of non-polar, semipolar and cubic III-nitrides, are reviewed, along with the basic principle of X-ray diffusion of thin thin films, and some useful values needed in calculations, including elastic constants and lattice parameters.
Abstract: The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV, violet, blue and green light-emitting diodes and lasers, as well as solar cells, high-electron mobility transistors (HEMTs) and other devices. However, the film growth process gives rise to unusually high strain and high defect densities, which can affect the device performance. X-ray diffraction is a popular, non-destructive technique used to characterize films and device structures, allowing improvements in device efficiencies to be made. It provides information on crystalline lattice parameters (from which strain and composition are determined), misorientation (from which defect types and densities may be deduced), crystallite size and microstrain, wafer bowing, residual stress, alloy ordering, phase separation (if present) along with film thicknesses and superlattice (quantum well) thicknesses, compositions and non-uniformities. These topics are reviewed, along with the basic principles of x-ray diffraction of thin films and areas of special current interest, such as analysis of non-polar, semipolar and cubic III-nitrides. A summary of useful values needed in calculations, including elastic constants and lattice parameters, is also given. Such topics are also likely to be relevant to other highly lattice-mismatched wurtzite-structure materials such as heteroepitaxial ZnO and ZnSe.
925 citations
"Ultrasensitive Detection of Mercury..." refers background in this paper
...In our case, dislocation densities were calculated using the model given by Moram and Vickers [34] and were found out to be 3.2 × 109 cm−2 for N screw dislocations and 7.4 × 109 cm−2 for N edge dislocation densities....
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...[34] M. A. Moram and M. E. Vickers, “X-ray diffraction of III-nitrides,” Rep. Prog....
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...Moram and Vickers [34] and were found out to be 3....
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TL;DR: In this article, the toxicity mechanisms of various metal ions and their relationship towards the induction of oxidative stress have been summarized, and electrochemical biosensors employed in the detection of metal ions with various interfaces have been highlighted.
Abstract: Most of the metal ions are carcinogens and lead to serious health concerns by producing free radicals. Hence, fast and accurate detection of metal ions has become a critical issue. Among various metal ions arsenic, cadmium, lead, mercury and chromium are considered to be highly toxic. To detect these metal ions, electrochemical biosensors with interfaces such as microorganisms, enzymes, microspheres, nanomaterials like gold, silver nanoparticles, CNTs, and metal oxides have been developed. Among these, nanomaterials are considered to be most promising, owing to their strong adsorption, fast electron transfer kinetics, and biocompatibility, which are very apt for biosensing applications. The coupling of electrochemical techniques with nanomaterials has enhanced the sensitivity, limit of detection, and robustness of the sensors. In this review, toxicity mechanisms of various metal ions and their relationship towards the induction of oxidative stress have been summarized. Also, electrochemical biosensors employed in the detection of metal ions with various interfaces have been highlighted.
730 citations
"Ultrasensitive Detection of Mercury..." refers background in this paper
...The standard permissible limit set by the World Health Organization (WHO) and Environmental Protection Agency (EPA) for mercury (Hg2+) ions in drinking water is 1 and 2 ppb, respectively [3], [5]....
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TL;DR: The study suggests that wastewater irrigation led to accumulation of heavy metals in food stuff causing potential health risks to consumers, and heavy metal contamination in the wastewater irrigated site presented a significant threat of negative impact on human health.
728 citations
"Ultrasensitive Detection of Mercury..." refers background in this paper
...THE toxic nature of heavy metals is well known since they pose a greater threat to human health and the environment [1]....
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TL;DR: These non-volatile memory devices, based on field-effect transistors with large hysteresis, consisting entirely of stacked two-dimensional materials show high mobility, high on/off current ratio, large memory window and stable retention, providing a promising route towards flexible and transparent memory devices utilizing atomically thin two- dimensional materials.
Abstract: Atomically thin two-dimensional materials have emerged as promising candidates for flexible and transparent electronic applications. Here we show non-volatile memory devices, based on field-effect transistors with large hysteresis, consisting entirely of stacked two-dimensional materials. Graphene and molybdenum disulphide were employed as both channel and charge-trapping layers, whereas hexagonal boron nitride was used as a tunnel barrier. In these ultrathin heterostructured memory devices, the atomically thin molybdenum disulphide or graphene-trapping layer stores charge tunnelled through hexagonal boron nitride, serving as a floating gate to control the charge transport in the graphene or molybdenum disulphide channel. By varying the thicknesses of two-dimensional materials and modifying the stacking order, the hysteresis and conductance polarity of the field-effect transistor can be controlled. These devices show high mobility, high on/off current ratio, large memory window and stable retention, providing a promising route towards flexible and transparent memory devices utilizing atomically thin two-dimensional materials.
648 citations
"Ultrasensitive Detection of Mercury..." refers background in this paper
...These unique properties of MoS2 make it most suitable for photodetectors, gas sensors, water splitting, batteries, and memory devices [18], [20], [23]–[25]....
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TL;DR: Detailed studies of MoS2 transistors on industrial plastic sheets reveal robust electronic properties down to a bending radius of 1 mm which is comparable to previous reports for flexible graphene transistors, and provides guidance for achieving flexible MoS 2 transistors that are reliable at sub-mm bending radius.
Abstract: While there has been increasing studies of MoS2 and other two-dimensional (2D) semiconducting dichalcogenides on hard conventional substrates, experimental or analytical studies on flexible substrates has been very limited so far, even though these 2D crystals are understood to have greater prospects for flexible smart systems. In this article, we report detailed studies of MoS2 transistors on industrial plastic sheets. Transistor characteristics afford more than 100x improvement in the ON/OFF current ratio and 4x enhancement in mobility compared to previous flexible MoS2 devices. Mechanical studies reveal robust electronic properties down to a bending radius of 1 mm which is comparable to previous reports for flexible graphene transistors. Experimental investigation identifies that crack formation in the dielectric is the responsible failure mechanism demonstrating that the mechanical properties of the dielectric layer is critical for realizing flexible electronics that can accommodate high strain. Our uniaxial tensile tests have revealed that atomic-layer-deposited HfO2 and Al2O3 films have very similar crack onset strain. However, crack propagation is slower in HfO2 dielectric compared to Al2O3 dielectric, suggesting a subcritical fracture mechanism in the thin oxide films. Rigorous mechanics modeling provides guidance for achieving flexible MoS2 transistors that are reliable at sub-mm bending radius.
457 citations
"Ultrasensitive Detection of Mercury..." refers background in this paper
...into the body of living beings and affect their health [2]....
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...The excellent mechanical flexibility, robustness, outstanding thermal stability, high surface to volume ratio, and ease of utilization with silicon device processing make the MoS2 a superior material for future technologies [2], [18], [21]....
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