Ultrathin oxide (SiOx) grown on HF-treated silicon
Abstract: Ultrathin tunnel oxides (SiOx) were grown on silicon, pretreated with 5% hydrofluoric acid, using high pressure, low temperature oxidation. These oxides were characterized using variable illumination current-voltage (Voc - Jsc) measurements on semi-transparent metal gate MIS diodes. The open circuit voltage (Voc), short circuit current (Jsc), ideality factor (n) and reverse saturation current (Jo) are studied as a function of oxidation time. The interface state density Dits for the HF treated sample was found to decrease from 2 X 1012 cm-2eV-1 to 9.21 X 1011 cm-2eV-1. Highly reproducible, good quality ultrathin oxides were obtained by pre-treatment of the wafer in hydrofluoric acid.
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