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Proceedings ArticleDOI

Ultrathin oxide (SiOx) grown on HF-treated silicon

01 Feb 1992-Vol. 1523, pp 309-313

AbstractUltrathin tunnel oxides (SiOx) were grown on silicon, pretreated with 5% hydrofluoric acid, using high pressure, low temperature oxidation. These oxides were characterized using variable illumination current-voltage (Voc - Jsc) measurements on semi-transparent metal gate MIS diodes. The open circuit voltage (Voc), short circuit current (Jsc), ideality factor (n) and reverse saturation current (Jo) are studied as a function of oxidation time. The interface state density Dits for the HF treated sample was found to decrease from 2 X 1012 cm-2eV-1 to 9.21 X 1011 cm-2eV-1. Highly reproducible, good quality ultrathin oxides were obtained by pre-treatment of the wafer in hydrofluoric acid.

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Citations
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Proceedings ArticleDOI
21 Oct 1998
Abstract: In this paper, we investigate the effect of silicon surface cleaning prior to oxidation on the reliability of ultra-thin oxides. It is demonstrated that chemical preoxide grown in H/sub 2/SO/sub 4//H/sub 2/O/sub 2/(SPM) solution prior to oxidation provides better oxide integrity than both HF-based solution dipping and preoxide grown in RCA SC1 or SC2 solutions. It is also found that the oxides with SPM preoxide exhibit better hot-carrier immunity than the RCA cleaned oxides.

References
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Journal ArticleDOI
01 Dec 1980
Abstract: An experimental study has been made of metal-silicon solar cells, with thin Ag, Au, Cu, Fe and In electrodes. No intentional interfacial layers were introduced and the silicon surfaces were chemically prepared in such a way as to minimise the residual oxide layer. The characteristics of the devices were taken at various illumination levels and the effect of barrier height, series resistance and n-value on the open-circuit voltage and the fill factor were studied. Comparison between theoretical predictions and the experimental results show that Voc/Jsc measurements that provide the n-values appropriate for the expression for the open-circuit voltage also provide a reliable method for experimental barrier-height determination under illumination and that the above ‘true’ n-value should also be used in fill-factor calculations.

4 citations