Ultrathin oxide (SiOx) grown on HF-treated silicon
01 Feb 1992-Vol. 1523, pp 309-313
TL;DR: In this article, ultrathin tunnel oxides (SiOx) were grown on silicon, pretreated with 5% hydrofluoric acid, using high pressure, low temperature oxidation, and characterized using variable illumination currentvoltage (Voc - Jsc) measurements on semi-transparent metal gate MIS diodes.
Abstract: Ultrathin tunnel oxides (SiOx) were grown on silicon, pretreated with 5% hydrofluoric acid, using high pressure, low temperature oxidation. These oxides were characterized using variable illumination current-voltage (Voc - Jsc) measurements on semi-transparent metal gate MIS diodes. The open circuit voltage (Voc), short circuit current (Jsc), ideality factor (n) and reverse saturation current (Jo) are studied as a function of oxidation time. The interface state density Dits for the HF treated sample was found to decrease from 2 X 1012 cm-2eV-1 to 9.21 X 1011 cm-2eV-1. Highly reproducible, good quality ultrathin oxides were obtained by pre-treatment of the wafer in hydrofluoric acid.
Citations
More filters
21 Oct 1998
TL;DR: In this paper, the effect of silicon surface cleaning prior to oxidation on the reliability of ultra-thin oxides was investigated, and it was demonstrated that chemical preoxide grown in H/sub 2/SO/sub 4/H/sub 1/O/Sub 2/(SPM) solution prior to oxidization provides better oxide integrity than both HF-based solution dipping and preoxide growing in RCA SC1 or SC2 solutions.
Abstract: In this paper, we investigate the effect of silicon surface cleaning prior to oxidation on the reliability of ultra-thin oxides. It is demonstrated that chemical preoxide grown in H/sub 2/SO/sub 4//H/sub 2/O/sub 2/(SPM) solution prior to oxidation provides better oxide integrity than both HF-based solution dipping and preoxide grown in RCA SC1 or SC2 solutions. It is also found that the oxides with SPM preoxide exhibit better hot-carrier immunity than the RCA cleaned oxides.
References
More filters
01 Dec 1980
TL;DR: In this paper, an experimental study has been made of metal-silicon solar cells, with thin Ag, Au, Cu, Fe and In electrodes, and the characteristics of the devices were taken at various illumination levels and the effect of barrier height, series resistance and n-value on the open-circuit voltage and the fill factor were studied.
Abstract: An experimental study has been made of metal-silicon solar cells, with thin Ag, Au, Cu, Fe and In electrodes. No intentional interfacial layers were introduced and the silicon surfaces were chemically prepared in such a way as to minimise the residual oxide layer. The characteristics of the devices were taken at various illumination levels and the effect of barrier height, series resistance and n-value on the open-circuit voltage and the fill factor were studied. Comparison between theoretical predictions and the experimental results show that Voc/Jsc measurements that provide the n-values appropriate for the expression for the open-circuit voltage also provide a reliable method for experimental barrier-height determination under illumination and that the above ‘true’ n-value should also be used in fill-factor calculations.
4 citations