Use of empirically deduced composition and temperature dependent intrinsic carrier density in Si1-xGex, In1-xGaxAs and In1-xGaxAsyP1-y in calculating minimum capacitance in C-V plot of MIS structure
TL;DR: In this article, an expression for the composition and temperature dependence of intrinsic carrier densities in Si 1− x Ge x, In 1−x Ga x As and In 1 − x Ga X As y P 1− y are developed.
Abstract: Empirical expressions for the composition and temperature dependence of intrinsic carrier densities in Si 1− x Ge x , In 1−x Ga x As and In 1− x Ga x As y P 1− y are developed. The value is then used to compute the minimum capacitance in AlSi 3 N 4 Si 1− x Ge x MIS structures and good agreement is obtained with the experimental data. The expected values of minium capacitance for MIS diodes made of the other two materials are given.
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19 Dec 2019
TL;DR: In this article, the intrinsic carrier density of Ge1−xSnx alloy (0 ≤ x ≤ 02) is calculated by including composition dependent effective masses in Γ and L valleys in the conduction band, in light hole (LH) and heavy hole (HH) valence bands, and composition-dependent band gaps.
Abstract: Values of intrinsic carrier density ni in Ge1−xSnx alloy (0 ≤ x ≤ 02) are calculated by including composition dependent effective masses in Γ and L valleys in the conduction band, in light hole (LH) and heavy hole (HH) valence bands, and composition-dependent band gaps The maximum temperatures of operation of the alloys are also determined over a range of dopant densities and alloy compositions The temperature dependence of intrinsic density around room temperature is obtained by using x-dependent α and β parameters in Varshney’s equation The maximum achievable electron mobility based on ni is estimated
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TL;DR: In this paper, various models for calculation of physical parameters in compound alloys are discussed and the results for In1−x Gax Asy P1−y quaternaries are presented.
Abstract: Various models for calculation of physical parameters in compound alloys are discussed and the results for In1−x Gax Asy P1−y quaternaries are presented. The model used is based on a linear interpolation scheme, and therefore necessitates known values of the parameters for the related binary and ternary alloys. The material parameters considered in the present study can be classified into the following eleven groups: (1) lattice constant and crystal density, (2) thermal expansion coefficient, (3) electronic‐band structure, (4) external perturbation effect on the lowest‐direct gap, (5) effective mass, (6) dielectric constant, (7) Frohlich coupling parameter, (8) elastic properties, (9) piezoelectric properties, (10) deformation potential, and (11) excitonic effect. Of particular interest is the deviation of material parameters from linearity with respect to the alloy composition. It is found that the present model provides generally acceptable parameters, in good agreement with the existing experimental da...
686 citations
TL;DR: In this paper, the authors review recent advances in our current level of understanding of the physics underlying transport and optical properties of Ge x Si 1-x /Si strained-layer heterostructures.
Abstract: This paper reviews recent advances in our current level of understanding of the physics underlying transport and optical properties of Ge x Si 1-x /Si strained-layer heterostructures. Included are discussions of critical (maximum) layer thicknesses, effects of coherency strain on the bandgaps of both Si and Ge x Si 1-x and the influence of layer strains on the band alignments of Ge x Si 1-x /Si strained-layer heterostructures. Transport studies will center on the modulation doping results of both n and p type heterostructures. Indeed, these earlier transport studies provided essential information which led to an understanding of the band-alignment in these strained layer heterostructures. Recent measurements of the indirect bandgap of Ge x Si 1-x strained layers on
628 citations
TL;DR: The results of a comprehensive study of the overall electrical characteristics of thermally oxidised silicon surfaces are presented, and interpreted on the basis of a simple physical model of the MOS structure as mentioned in this paper.
Abstract: The results of a comprehensive study of the overall electrical characteristics of thermally oxidised silicon surfaces are presented, and interpreted on the basis of a simple physical model of the MOS structure. Extreme care was taken throughout this study to insure the validity, significance and reproducibility of the quantities measured. It is shown that the charge in the surface states is constant over a wide range of variation of the surface potential, and that this charge is positive for both n and p-type oxidised silicon. The density of surface state charge is about 2 × 1011 cm−2, and is essentially unaffected by a twenty-fold variation in the oxide thickness and by a 250-fold variation in the concentration of boron in the p-type samples. The effects of measurement frequency, illumination and temperature on the space charge capacitance of an inverted surface were investigated. This capacitance was shown to follow one of three simple models depending on the measurement frequency and the rate of generation of minority carriers.
375 citations
TL;DR: In this paper, the Kane nonparabolic approximation for band structure and recent measurements of the heavy hole mass mh and energy gap Eg were used to calculate the intrinsic carrier concentration in Hg1−xCdxTe.
Abstract: Intrinsic carrier concentration in Hg1−xCdxTe is calculated as a function of temperature and composition using the Kane nonparabolic approximation for band structure and recent measurements of the heavy hole mass mh and energy gap Eg. An expression fitted to these calculations is: ni[5.585−3.820x+1.753(10−3)T −1.364(10−3)xT] ×(1014)E3/4gT3/2 exp(−Eg/2kbT). The fit of this approximation is within 1% of the calculated ni for the range Eg>0, 50
220 citations
TL;DR: In this paper, the composition dependence of the room-temperature bandgap (Eg) and lattice constant (ao) in the pseudobinary GayIn1-yAs, GayIn 1-yP, GaAsxPl-x, and InAsxpl-x systems have been derived.
Abstract: Published data for the composition dependence of the room-temperature bandgap (Eg) and lattice constant (ao) in the pseudobinary GayIn1-yAs, GayIn1-yP, GaAsxPl-x, and InAsxPl-x systems have been used to derive the following equations for the quaternary GayInl-yAsx Pl-x, alloys:
$$\begin{gathered} a_o ({\AA}) = 5.87 + 0.18x - 0.42y + 0.02xy \hfill \\ E_g (eV) = 1.35 - x + 1.4y - 0.33xy - (0.758 - 0.28x)y(1 - y) \hfill \\ - (0.101 + 0.109y) x(1 - x). \hfill \\ \end{gathered} $$
197 citations