Journal ArticleDOI
Variation of trap state density and barrier height with Cu/In ratio in CuInSe2 films
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TLDR
In this paper, optical properties of CuInSe 2 films, deposited by the three-source evaporation technique at a substrate temperature of 670 K, were studied critically to determine the grain boundary scattering effects from the tailing of the absorption edge.About:
This article is published in Thin Solid Films.The article was published on 1994-07-01. It has received 11 citations till now. The article focuses on the topics: Grain boundary & Crystallite.read more
Citations
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Journal ArticleDOI
Comprehensive comparison of various techniques for the analysis of elemental distributions in thin films.
Daniel Abou-Ras,Raquel Caballero,Ch.-H. Fischer,Christian A. Kaufmann,Iver Lauermann,Roland Mainz,Harry Mönig,A. Schöpke,Christiane Stephan,C. Streeck,Susan Schorr,A. Eicke,M. Döbeli,B. Gade,J. Hinrichs,Tim Nunney,H. Dijkstra,Volker Hoffmann,Denis Klemm,Varvara Efimova,Andreas Bergmaier,Günther Dollinger,Thomas Wirth,Wolfgang E. S. Unger,Angus Rockett,Alejandro Pérez-Rodríguez,J. Álvarez-García,Victor Izquierdo-Roca,Thomas Schmid,Pyuck-Pa Choi,Matthias Müller,Frank Bertram,Juergen Christen,H. Khatri,Robert W. Collins,Sylvain Marsillac,I. Kötschau +36 more
TL;DR: Results on elemental distribution analyses in Cu(In,Ga)Se2 thin films for solar cells performed by use of wavelength-dispersive and energy-dis Dispersive X-ray spectrometry in a scanning electron microscope and transmission electron microscope are shown.
Journal ArticleDOI
Composition effects on the crystal structure of CuInSe2
José Manuel Merino,J. L. Martín de Vidales,Sourindra Mahanty,Raquel Diaz,F. Rueda,Máximo León +5 more
TL;DR: By x-ray powder diffraction and the Rietveld refinement method, the atomic positions in CuInSe2 were determined for compositions close to stoichiometry.
Journal ArticleDOI
Structural, compositional and photoluminescence characteristics of CuInSe2 thin films prepared by close-spaced vapor transport
TL;DR: In this article, the growth temperature effects on the properties of polycrystalline Cu-In-Se thin films, prepared by the close-spaced vapor technique (CSVT) using iodine as a transport agent.
Journal ArticleDOI
Electrodeposition of CuInSe2 thin films and their characteristics
TL;DR: In this paper, a structural transition from chalcopyrite to sphalerite was observed on the electrodeposited CuInSe2 when the compositions of the thin films were varied from a quasi-stoichiometry to indium rich.
Journal ArticleDOI
Optical Constants of CuInSe2 Thin Films Prepared by Two-Stage Process
TL;DR: In this paper, the structural properties and atomic compositions of thin film CuInSe2 chalcopyrite semiconductors were determined by energy-dispersive analysis of x-rays (EDAX) and x-ray diffraction (XRD) measurements.
References
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Journal ArticleDOI
The electrical properties of polycrystalline silicon films
TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
Journal ArticleDOI
Transport properties of polycrystalline silicon films
TL;DR: In this article, the transport properties of polycrystalline silicon films are examined and interpreted in terms of a modified grain-boundary trapping model, based on the assumption of both a δ-shaped and a uniform energy distribution of interface states.
Journal ArticleDOI
ZnO/CdS/CuInSe2 thin‐film solar cells with improved performance
TL;DR: In this paper, the authors described the highest efficiency single junction thin-film cell reported to date with an active area efficiency of 14.8% with the cell structure n−ZnO/n−CdS/p−CuInSe2 deposited on a soda-lime glass substrate.
Journal ArticleDOI
Bandgap and optical transitions in thin films from reflectance measurements
TL;DR: In this paper, a new formulation and method are presented for evaluating bandgap, optical transitions and optical constants from the reflectance data for films deposited onto a non-absorbing substrate, which can be used to evaluate the optical properties of the films.
Journal ArticleDOI
Defect chemical explanation for the effect of air anneal on CdS/CuInSe2 solar cell performance
David Cahen,Rommel Noufi +1 more
TL;DR: In this paper, the authors formulate a consistent defect chemical model of the effect of air/O2 anneals on CdS/CuInSe2 devices, based on O-induced neutralization of (near) surface donor states in CuInSe 2 grains.
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