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Journal ArticleDOI

Velocity‐field characteristics of Ga1−xInxP1−yAsy quaternary alloys

01 Mar 1977-Applied Physics Letters (American Institute of Physics)-Vol. 30, Iss: 5, pp 242-244
TL;DR: In this article, the electron drift velocity and electric field relationship for the Ga1−xInxP1−yAsy quaternary alloy was calculated using the Monte Carlo method.
Abstract: The electron drift‐velocity–electric‐field relationship has been calculated for the Ga1−xInxP1−yAsy quaternary alloy using the Monte Carlo method. Emphasis has been placed on the compositional range for which the alloy is lattice matched to GaAs and InP. These calculations suggest that this quaternary offers promise as a material for microwave semiconductor devices, including field‐effect transistors and transferred electron devices.
Citations
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Journal ArticleDOI
TL;DR: In this article, Monte Carlo calculations of velocity-field characteristics for GaAs using the recent experimental conduction-band ordering of Aspnes, which places the Lc6(111) conduction−band minima lower in energy than the Xc6 (100) minima.
Abstract: This paper describes Monte Carlo calculations of velocity‐field characteristics for GaAs using the recent experimental conduction‐band ordering of Aspnes, which places the Lc6(111) conduction‐band minima lower in energy than the Xc6(100) minima. These calculations use intervalley deformation potentials which give the best fit to recent high‐field drift velocity measurements, and at the same time give good agreement with accepted peak velocity and threshold field values.

260 citations

Journal ArticleDOI
TL;DR: In this article, a technique is described for the estimation of the influence of random potential alloy scattering on the high field transport properties of quaternary III-V semiconductors obtained by Monte Carlo simulation.
Abstract: A technique is described for the estimation of the influence of random potential alloy scattering on the high field transport properties of quaternary III–V semiconductors obtained by Monte Carlo simulation. The approach is based on an extension of a theoretical model for scattering in the ternary alloys. The magnitude of the scattering potential is an important parameter in alloy scattering, and three proposed models for calculating this potential are discussed. These are the energy bandgap difference, the electron affinity difference, and the heteropolar energy difference for the appropriate binary compounds. The technique is used in the Monte Carlo method to study the influence of alloy scattering on the transport properties of III–V quaternary alloys. The results of this study are used in a device model to estimate device parameters for FETs.

169 citations

Journal ArticleDOI
TL;DR: In this paper, the energy band gap and lattice constant contours are presented for the nine quaternary alloys formed from Al, Ga, In and P, As, Sb.
Abstract: Energy band gap and lattice constant contours are presented for the nine quaternary alloys formed from Al, Ga, In and P, As, Sb. The quaternary bandgaps were obtained using an interpolation formula proposed by Moonet al. The quater nary lattice constants were obtained by use of a linear interpolation technique using the binary lattice constants as boundary values.

150 citations

Journal ArticleDOI
TL;DR: In this paper, the band-to-band Auger recombination effect on the threshold current in an InGaAsP laser is studied theoretically and an approximation method for the calculation is derived and the Auger lifetime is obtained numerically in the framework of the k-p perturbation method for band structure calculation.
Abstract: The band-to-band Auger recombination effect on the threshold current in an InGaAsP laser is studied theoretically. An approximation method for the calculation is derived and the Auger lifetime is obtained numerically in the framework of the k-p perturbation method for band structure calculation. Gain factor and radiative lifetime are calculated by using Stern's method, which involves the band tailing caused by injected carriers. Calculated carder lifetime, quantum efficiency, and threshold current density for the 1.27 μm InGaAsP laser agree well with reported experimental values. The calculated characteristic temperature T 0 and the break point temperature T B are compared with experimental values for InGaAsP lasers with a variety of compositions. The comparison shows that the Auger recombination is one of the dominant effects in determining the threshold current of InGaAsP lasers.

135 citations

Journal ArticleDOI
TL;DR: In this article, the physical properties related to the crystal growth and carrier transport are discussed in terms of both the design and the operating characteristics of detectors fabricated from this ternary alloy.
Abstract: Ga 0.47 In 0.53 As has been used to make fast (rt i_{D} A) and good quantum efficiency (η Q ext > 50 percent over the entire 1.0-1.7 \mu m region of the optical spectrum). The physical properties related to the crystal growth and carrier transport are discussed in this paper in terms of both the design and the operating characteristics of detectors fabricated from this ternary alloy. The results of our work show that Ga 0.47 In 0.53 As is a material well-suited to several important semiconductor device applications. A comparison to other semiconductor photodiodes shows that Ga 0.47 In 0.53 As is one of the most sensitive detectors available in the 1.0-1.7 \mu m wavelength region. One can expect repeater-free transmission in excess of 150 km at 100 Mbits . s-1using these detectors in a digital optical fiber link at the 1.55 μm low-loss ( \alpha dB . km-1) low-dispersion transmission window.

115 citations

References
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Journal ArticleDOI
TL;DR: In this article, a Monte Carlo technique was used to calculate the electron distribution functions in the (000) and (100) valleys of gallium arsenide, and the structure of the distribution function was interpreted in terms of the energy dependence of the scattering processes, particular reference being made to the prediction of a population inversion for fields in excess of about 10 kV cm.

769 citations

Journal ArticleDOI
TL;DR: In this paper, the experimental results for electrons obtained with the time-of-flight technique are presented for temperatures between 8 and 300 and fields ranging between 1.5 and 5 \ifmmode\times\else\texttimes\fi{} ${10}^{4}$ V ${\mathrm{cm}}^{\ensuremath{-}1} 1}$ oriented along crystallographic directions.
Abstract: Experimental results for electrons obtained with the time-of-flight technique are presented for temperatures between 8 and 300\ifmmode^\circ\else\textdegree\fi{}K and fields ranging between 1.5 and 5 \ifmmode\times\else\texttimes\fi{} ${10}^{4}$ V ${\mathrm{cm}}^{\ensuremath{-}1}$ oriented along $〈111〉$, $〈110〉$, and $〈100〉$ crystallographic directions. At 8\ifmmode^\circ\else\textdegree\fi{}K the dependence of the transit time upon sample thickness has allowed a measurement of the valley repopulation time when the electric field is $〈100〉$ oriented. These experimental results have been interpreted with Monte Carlo calculations in the same ranges of temperature and field. The theoretical model includes the many-valley structure of the Si conduction band, acoustic intravalley scattering with correct momentum and energy relaxation and correct equilibrium phonon population, several intervalley scatterings, and ionized impurity scattering.

418 citations

Journal ArticleDOI
TL;DR: In this article, room temperature cw operation has been achieved for stripe geometry double-heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm.
Abstract: Room‐temperature cw operation has been achieved for stripe‐geometry double‐heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm. The heterostructures were grown by liquid‐phase epitaxy on melt‐grown InP substrates, and stripes were defined by using proton bombardment to produce high‐resistance current‐confining regions.

265 citations

Journal ArticleDOI
TL;DR: In this article, the mean time between scattering due to a random alloy potential is considered and a pseudobinary alloy model for describing the arrangement of alloy concentrations on the allowed lattice sites is presented.
Abstract: The mean time between scattering due to a random alloy potential is considered. The development makes use of the Warren-Cowley order parameters and uses a pseudobinary alloy model for describing the arrangement of alloy concentrations on the allowed lattice sites. The resulting mean time between scattering is found to depend inversely on the square root of temperature and energy.

252 citations

Journal ArticleDOI
TL;DR: In this paper, the drift velocity in high electric fields was calculated for several wideband-gap semiconductors and SiC, diamond, and GaN hold promise for values above 2\ifmmode\times\else\texttimes\fi{10}^{7}$ cm/sec.
Abstract: The drift velocity in high electric fields is calculated for several wide-band-gap semiconductors. Saturated velocities above ${10}^{7}$ cm/sec are found for several and SiC, diamond, and GaN hold promise for values above 2\ifmmode\times\else\texttimes\fi{}${10}^{7}$ cm/sec.

240 citations