Proceedings ArticleDOI
Vertical GaN Split Gate Trench MOSFET with Improved High Frequency FOM
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TLDR
In this article, a new vertical GaN split gate trench MOSFET with a conventional trench gate MOS-FET for 600 V switching applications has been proposed, which exhibits 7 times lower HF-FOM (C rss ×R on ) and 3 times lower FOM (Q GD × R on ) without increase in the specific on-resistance, when compared to that of conventional MOS FET.Abstract:
Using TCAD Simulation, we present a systematic analysis and comparison of a new vertical GaN split gate trench MOSFET (SGT-MOSFET) with a conventional trench gate MOS-FET for 600 V switching applications We have calibrated our simulation models to match the experimental data as available in the literature We show that the SGT-MOSFET exhibits 7 times lower HF-FOM (C rss ×R on ) and 3 times lower HF-FOM (Q GD × R on ) without increase in the specific on-resistance, when compared to that of conventional MOSFET We, also have presented the main process steps required for the fabrication of the proposed device These improvements are important for reducing the conduction and switching losses, and making high frequency power conversion more efficientread more
Citations
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Journal ArticleDOI
A comparative analysis and an optimized structure of vertical GaN floating gate trench MOSFET for high-frequency FOM
TL;DR: In this paper , a vertical GaN floating gate trench MOSFET was designed to obtain an enhanced high-frequency figure of merit (HF-FOM) than the conventional SGT- and TG-MOSFs.
Journal ArticleDOI
An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance
TL;DR: In this article , the authors proposed a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT) for power conversion applications, where two parallel gates and a field plate are introduced vertically on the sidewalls and connected, respectively, to the gate and source.
Journal ArticleDOI
An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance
TL;DR: In this article , the authors proposed a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT) for power conversion applications, where two parallel gates and a field plate are introduced vertically on the sidewalls and connected to the gate and source.
References
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Journal ArticleDOI
Gallium nitride devices for power electronic applications
TL;DR: In this article, the authors discuss the properties of GaN that make it an attractive alternative to established silicon and emerging SiC power devices and present challenges and innovative solutions to creating enhancement-mode power switches.
Journal ArticleDOI
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.
Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
TL;DR: In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.
Journal ArticleDOI
GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
Masahito Kodama,Masahiro Sugimoto,Eiko Hayashi,Narumasa Soejima,Osamu Ishiguro,Masakazu Kanechika,Kenji Itoh,Hiroyuki Ueda,Tsutomu Uesugi,Tetsu Kachi +9 more
TL;DR: In this article, a novel method for fabricating trench structures on GaN was developed and a smooth non-polar (1100) plane was obtained by wet etching using tetramethylammonium hydroxide (TMAH) as the etchant.
Journal ArticleDOI
Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV
TL;DR: In this paper, the authors reported the characteristics of vertical GaN-based trench metal-oxide-semiconductor field effect transistors on a free-standing GaN substrate with a blocking voltage of 16 kV.