Proceedings ArticleDOI
Vertical GaN Split Gate Trench MOSFET with Improved High Frequency FOM
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TLDR
In this article, a new vertical GaN split gate trench MOSFET with a conventional trench gate MOS-FET for 600 V switching applications has been proposed, which exhibits 7 times lower HF-FOM (C rss ×R on ) and 3 times lower FOM (Q GD × R on ) without increase in the specific on-resistance, when compared to that of conventional MOS FET.Abstract:
Using TCAD Simulation, we present a systematic analysis and comparison of a new vertical GaN split gate trench MOSFET (SGT-MOSFET) with a conventional trench gate MOS-FET for 600 V switching applications We have calibrated our simulation models to match the experimental data as available in the literature We show that the SGT-MOSFET exhibits 7 times lower HF-FOM (C rss ×R on ) and 3 times lower HF-FOM (Q GD × R on ) without increase in the specific on-resistance, when compared to that of conventional MOSFET We, also have presented the main process steps required for the fabrication of the proposed device These improvements are important for reducing the conduction and switching losses, and making high frequency power conversion more efficientread more
Citations
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Journal ArticleDOI
A comparative analysis and an optimized structure of vertical GaN floating gate trench MOSFET for high-frequency FOM
TL;DR: In this paper , a vertical GaN floating gate trench MOSFET was designed to obtain an enhanced high-frequency figure of merit (HF-FOM) than the conventional SGT- and TG-MOSFs.
Journal ArticleDOI
An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance
TL;DR: In this article , the authors proposed a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT) for power conversion applications, where two parallel gates and a field plate are introduced vertically on the sidewalls and connected, respectively, to the gate and source.
Journal ArticleDOI
An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance
TL;DR: In this article , the authors proposed a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT) for power conversion applications, where two parallel gates and a field plate are introduced vertically on the sidewalls and connected to the gate and source.
References
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Journal ArticleDOI
GaN-on-Si Vertical Schottky and p-n Diodes
TL;DR: In this article, the authors demonstrated GaN vertical Schottky and p-n diodes on Si substrates for the first time, achieving a breakdown voltage of 205 V and a soft BV higher than 300 V, respectively, with peak electric field of 2.9 MV/cm in GaN.
Journal ArticleDOI
Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors
Yuhao Zhang,Min Sun,Zhihong Liu,Daniel Piedra,Hyung-Seok Lee,Feng Gao,Tatsuya Fujishima,Tomas Palacios +7 more
TL;DR: In this article, the authors present self-consistent electrothermal simulations of single-finger and multifinger GaN vertical metal-oxide-semiconductor field effect transistors (MOSFETs) and lateral AlGaN/GaN high-electron-mobility transistors and compare their thermal performance.
Journal ArticleDOI
In Situ O xide, G aN Interlayer-Based Vertical Trench MOS FET ( OG-FET ) on Bulk GaN substrates
Chirag Gupta,Cory Lund,Silvia H. Chan,Anchal Agarwal,Junquian Liu,Yuuki Enatsu,Stacia Keller,Umesh K. Mishra +7 more
TL;DR: In this paper, the authors report on high breakdown voltage in situ oxide, GaN interlayer-based vertical trench MOSFETs (OG-FET) on bulk GaN substrates.
Journal ArticleDOI
High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth
TL;DR: In this article, the carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning carbon doping concentration between ≤3.5 µm and 3.9 µm.
Journal ArticleDOI
600 V/ $1.7~\Omega$ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor
TL;DR: In this article, a GaN vertical trench metal-oxide-semiconductor field effect transistor (MOSFET) with normally off operation was reported, with a threshold voltage of 4.8 V, blocking voltage of 600 V at gate bias of 0 V, and on-resistance of $1.7~\Omega $ (10 V).