Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches
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TLDR
In this paper, an out-of-plane VO2 metal-insulator-metal structures and reproducible high-speed switching measurements in these two-terminal devices were reported.Abstract:
Electrically driven metal-insulator transition (MIT) in vanadium dioxide (VO2) is of interest in emerging memory devices, neural computation, and high-speed electronics. We report on the fabrication of out-of-plane VO2 metal-insulator-metal structures and reproducible high-speed switching measurements in these two-terminal devices. We have observed a clear correlation between the electrically driven on/off current ratio and the thermally induced resistance change during MIT. It is also found that sharp MIT could be triggered by the external voltage pulses within 2 ns at room temperature and the achieved on/ off ratio is greater than two orders of magnitude with good endurance.read more
Citations
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Mott Memory and Neuromorphic Devices
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Dynamically Reconfigurable Metadevice Employing Nanostructured Phase-Change Materials
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References
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Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories
TL;DR: In this article, the characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt-based resistance random access memory devices with stable and reproducible nanosecond bipolar switching behavior were studied.
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Phase-transition driven memristive system
TL;DR: In this article, the authors demonstrate memristive response in a thin film of Vanadium Dioxide, which is driven by the insulator-to-metal phase transition typical of this oxide.
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Phase-Transition Driven Memristive System
TL;DR: In this paper, the authors demonstrate memristive response in a thin film of vanadium dioxide, which is driven by the insulator-to-metal phase transition typical of this oxide and discuss details of this form of phase-change memristance and potential applications of their device.
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Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices.
TL;DR: A new dynamical model based on the Joule heating rate of a thermally driven insulator-to-metal phase transition that accurately reproduced the experimental results is derived and employed to estimate the switching time and energy scaling behavior of nanoscale niobium oxide crosspoint devices down to the 10 nm scale.
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Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications
Myungwoo Son,Joonmyoung Lee,Jubong Park,Jungho Shin,Godeuni Choi,Seungjae Jung,Wootae Lee,Seonghyun Kim,Sangsu Park,Hyunsang Hwang +9 more
TL;DR: In this paper, a nanoscale vanadium oxide (VO2) selection device with high on/off ratio (> 50), fast switching speed ( ; 106 A/cm2) was presented.