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Journal ArticleDOI

Warm electron coefficient in polar semiconductors in the presence of strong electron-electron collisions

28 Jun 1976-Physics Letters A (North-Holland)-Vol. 57, Iss: 4, pp 347-348
TL;DR: In this article, an iterative calculation of the warm electron coefficient was presented considering polar mode scattering in a parabolic band, where electron-electron collisions were assumed strong enough to establish a Maxwellian distribution function.
About: This article is published in Physics Letters A.The article was published on 1976-06-28. It has received None citations till now. The article focuses on the topics: Electron & Scattering.
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Journal ArticleDOI
Daniel L. Rode1
TL;DR: In this paper, the drift mobilities of the five direct-gap III-V semiconductors GaAs, GaSb, InP, InAs, and InSb are presented as a function of temperature.
Abstract: The electron drift mobilities of the five direct-gap III-V semiconductors GaAs, GaSb, InP, InAs, and InSb are presented as a function of temperature. Polar-mode, deformation-potential acoustic, and piezoelectric scattering are included, as well as nonparabolic conduction bands and the corresponding electron wave functions. The drift mobility follows exactly from the assumed model by a simple iterative technique of solution which retains all the advantages of variational techniques without, however, the need for excessive mathematical detail. Piezoelectric scattering is shown to be considerable in GaAs for temperatures below 100 \ifmmode^\circ\else\textdegree\fi{}K. The agreement between theory and experiment for GaAs is satisfactory.

295 citations

Journal ArticleDOI
TL;DR: In this article, the authors compared the theory which takes into account scatterings by polar optical phonons, acoustic phonons and ionized impurity atoms with the theory that does not.

2 citations