WlDE BAND GAP ELECTRONIC DEVlCES (KEYNOTE)
01 Jan 2002-
TL;DR: In this paper, the authors proposed Strain Energy Band Engineering and Pulsed Atomic Epitaxy techniques to control strain and lattice mismatch by using AllnGaNGaN heterostructures and should find important applications in power devices.
Abstract: The feature sizes of silicon devices approach values where fundamental physics limitations lead to diminishing returns on investment in further scaling, and wide band gap semiconductor materials look increasingly attractive for many applications, where high electron mobility, high current carrying capabilities, a high thermal conductivity, high temperature operation, and a high breakdown field make them superior to silicon and Ill-V semiconductor technology. GaN-based devices have demonstrated high-temperature operation with little or no degradation up to 300 "C. The most spectacular results have been obtained for AIGaN/GaN microwave power High Electron Mobility Transistors (HEMTs) that yielded over to 11 W/mni power at 10 GHz. The maximum density of the two-dimensional electron gas at the GaNiAlGaN heterointerface or in GaN/AIGaN quantum well structures can exceed 2~10'~ cm-2, which is an order of magnitude higher than for traditional GaAs/AIGaAs heterostructures. Very large piezoelectric constants of AIN and GaN can be used in piezoelectric and pyroelectric sensors and could be taken advantage for enhancing the sheet carrier concentration and reducing leakage current in conventional electronic devices. Recently proposed Strain Energy Band Engineering and Pulsed Atomic Epitaxy techniques should allow us to independently control strain and lattice mismatch by using AllnGaNGaN heterostructures and should find important applications in power devices. Si02/AIGalnN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistors (MOSHFETs) and SiN/AlGalnN/GaN Metal lnsulator Semiconductor Heterostructure Field Effect Transistors (MlSHFETs) have exhibited perfomiance superior to that of conventional AIGaN/GaN devices and hold promise for power applications. GaN epitaxial layers can be grown on Sic, which allows us to combine superior transport properties of GaN with a high thermal conductivity of Sic. All this gives hope that electronic devices based on GaN will reach the same prominence as GaN-based blue and white, and UV light emitters.
References
More filters
TL;DR: In this paper, the resonant detection of subterahertz radiation by two-dimensional electron plasma confined in a submicron gate GaAs/AlGaAs field effect transistor is demonstrated.
Abstract: The resonant detection of subterahertz radiation by two-dimensional electron plasma confined in a submicron gate GaAs/AlGaAs field-effect transistor is demonstrated. The results show that the critical parameter that governs the sensitivity of the resonant detection is ωτ, where ω is the radiation frequency and τ is the momentum scattering time. By lowering the temperature and hence increasing τ and increasing the detection frequency ω, we reached ωτ∼1 and observed resonant detection of 600 GHz radiation in a 0.15 μm gate length GaAs field-effect transistor. The evolution of the observed photoresponse signal with temperature and frequency is reproduced well within the framework of a theoretical model.
214 citations
TL;DR: In this article, the energy dependent momentum and energy relaxation times, and the effective single valley energy dependent effective mass, were extracted from Monte Carlo simulations of gallium nitride, indium oxide, and aluminum nitride.
Abstract: The energy dependent momentum and energy relaxation times, and the effective single valley energy dependent effective mass, are extracted from Monte Carlo simulations of gallium nitride, indium nitride, and aluminum nitride. A simple semi-analytical energy model, which uses these dependencies, is in good agreement with the results of transient Monte Carlo simulations. Both the Monte Carlo and the semi-analytical simulations show that the overshoot effects are most pronounced when the electric field abruptly changes from a value below a critical field to one above. This is attributed to the relatively large difference between the effective energy and momentum relaxation times for such a variation of electric field. Our calculations indicate that gallium nitride and indium nitride should have the most pronounced transient effects. A calculation of the transit times as a function of the gate length shows that an upper bound for the maximum expected cut-off frequencies are 260 GHz and 440 GHz for 0.2 μm gallium nitride and indium nitride field effect transistors, respectively.
10 citations
01 Jan 1996
TL;DR: A 1GaN/GaN Heterostructure Field Effect Transistors (HFETs) have been used as solar blind ultraviolet photodetectors as mentioned in this paper, which use superior transport properties of the two dimensional electron gas in wide band gap semiconductors.
Abstract: We will review properties of wide band gap semiconductors, which make them superior materials for many electronic and optoelectronic applications. These semiconductors should allow us to achieve a very high on-to-off ratio in transistors, implement nonvolatile solid state memories, and develop new optoelectronic and optical devices for visible and ultraviolet ranges as well as electronic and optoelectronic systems operating in a harsh environment and/or at elevated temperatures. Technological difficulties, relatively low mobility values, and problems related to contacts and traps make the realization of this great potential a challenge. We show that many of these difficulties can be alleviated in A1GaN/GaN Heterostructure Field Effect Transistors (HFETs), which use superior transport properties of the two dimensional electron gas in wide band gap semiconductors. A1GaN/GaN HFET’s, which have been fabricated on a transparent sapphire substrate, are very sensitive to ultraviolet light. Hence, they can be also used as solar blind ultraviolet photodetectors.
9 citations