Journal ArticleDOI
Write-Once-Read-Many-Times and Bipolar Resistive Switching Characteristics of TiN/HfO 2 /Pt Devices Dependent on the Electroforming Polarity
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TLDR
In this article, the dependence of memory characteristics on electroforming polarity based on TiN/HfO2/Pt devices is reported. And the authors also indicate that the TiN and HfO 2/Pts devices have promising application in both RRAM and non-editable WORM.Abstract:
In this letter, we report the dependence of memory characteristics on electroforming polarity based on TiN/HfO2/Pt devices. Bipolar resistive switching (BRS) and write-once-read-many-times memory (WORM) behaviors were obtained after the negative and positive electroforming process, respectively. Analysis of conduction mechanisms of high resistance state confirms that BRS and WORM were dominated by Schottky emission and trap-controlled space charge limited current, respectively. These phenomena can be explained by the filamentary model with the assistance of interfacial role. Moreover, this letter also indicates that the TiN/HfO2/Pt devices have promising application in both RRAM and non-editable WORM.read more
Citations
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Journal ArticleDOI
Comprehensive Model of Electron Conduction in Oxide-Based Memristive Devices
Carsten Funck,Stephan Menzel +1 more
TL;DR: In this article, a two-terminal memristive device can change its resistance state upon application of appropriate voltage stimuli, and the resistance can be tuned over a wide resistance range enabling the device to tolerate a wide range of voltage stimuli.
Journal ArticleDOI
Nonvolatile WORM and rewritable multifunctional resistive switching memory devices from poly(4-vinyl phenol) and 2-amino-5-methyl-1,3,4-thiadiazole composite
Yanmei Sun,Dianzhong Wen +1 more
TL;DR: In this article, a multifunctional resistive switching memory device with the typical sandwich structure of Al/Poly(4-vinylphenol) (PVP)+2-Amino-5-methyl-1,3,4-thiadiazole/Al is fabricated.
Journal ArticleDOI
Resistive Switching Characteristic of Low-Temperature Top-Electrode-Free Tin-Oxide Memristor
TL;DR: In this article, the bipolar resistive switching (RS) characteristic of a top-electrode-free sol-gel SnOx resistive memory, which was fabricated at a low temperature of 120 °C, was investigated.
Journal ArticleDOI
Write-Once-Read-Many-Times Characteristic of InZnO Oxide Semiconductor
TL;DR: In this article, the authors investigated the write-once-read-many-times (WORM) characteristics of sol-gel InZnO (IZO) thin films.
Journal ArticleDOI
Improved barrier parameters and working stability of Au/p-GO/n-lnP/Au–Ge Schottky barrier diode with GO interlayer showing resistive switching effect
TL;DR: In this paper, the authors investigated the Au/p-GO/n-lnP/Au-Ge device structure for possible micro-and opto-electronic applications.
References
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Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.
TL;DR: The Ag/ZnO:Mn/Pt device represents an ultrafast and highly scalable memory element for developing next generation nonvolatile memories and a model concerning redox reaction mediated formation and rupture of Ag bridges is suggested to explain the memory effect.
Journal ArticleDOI
Identification of a determining parameter for resistive switching of TiO2 thin films
Christina Rohde,Christina Rohde,Byung Joon Choi,Doo Seok Jeong,Seol Choi,Jin Shi Zhao,Cheol Seong Hwang +6 more
TL;DR: In this paper, an electric-pulse-induced resistive switching of 43nm thick TiO2 thin films grown by metalorganic chemical vapor deposition was studied by currentvoltage (I-V) and constant voltage-time measurements.
Journal ArticleDOI
Oxygen vacancy in monoclinic HfO2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments
TL;DR: In this paper, the authors calculate energy levels associated with the oxygen vacancy in monoclinic HfO2 using a hybrid density functional which accurately reproduces the experimental band gap.
Journal ArticleDOI
A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM
Shimeng Yu,H.-S. Philip Wong +1 more
TL;DR: In this paper, a phenomenological model was proposed to provide a unified explanation for both the unipolar and bipolar resistive switching mechanisms of metal oxide RRAMs, which combines the previous thermal dissolution model and ion migration model and thus can explain many experimental observations such as the electrode material-dependent switching polarity and the voltage-time dilemma between fast switching and long retention.