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Fig. 2. (a) Retention and (b) endurance characteristics of the ZnO WORM memory device in the ON and OFF states at a read voltage of 1.0 V. (c) Dependence of resistance on measurement temperature.
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Journal Article
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DOI
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Write-Once–Read-Many-Times Memory Based on ZnO on p-Si for Long-Time Archival Storage
[...]
Jing Qi
1
,
Qing Zhang
1
,
Jian Huang
1
,
Jingjian Ren
1
,
Mario Olmedo
1
,
Jianlin Liu
1
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+2 more
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Institutions (1)
University of California, Riverside
1
12 Aug 2011
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IEEE Electron Device Letters