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X‐ray photoelectron spectroscopy of ammonium sulfide treated GaAs (100) surfaces
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The effect of ammonium sulfide treatment on the GaAs(100) surface has been investigated by x-ray photoelectron spectroscopy as discussed by the authors, which produces a slight Ga enrichment on the surface and leaves roughly 0.6 of a monolayer of sulfide which inhibits initial oxidation of the surface.Abstract:
The effect of an ammonium sulfide treatment on the GaAs (100) surface has been investigated by x‐ray photoelectron spectroscopy. The treatment produces a slight Ga enrichment on the surface and leaves roughly 0.6 of a monolayer of sulfide which inhibits initial oxidation of the surface. The sulfide is not lost as the surface becomes oxidized but appears to remain near the GaAs/oxide interface. Furthermore, in the oxidized layer, As oxide is preferentially drawn to the surface relative to Ga oxide.read more
Citations
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Chemical studies of the passivation of GaAs surface recombination using sulfides and thiols
TL;DR: In this article, the steady-state photoluminescence of (100)-oriented GaAs has been studied using x-ray photoelectron spectroscopy and steadystate photodynamic properties of GaAs surfaces exposed to inorganic and organic donors.
Journal ArticleDOI
Epitaxial film crystallography by high-energy Auger and X-ray photoelectron diffraction
TL;DR: In this paper, the authors review the application of Auger and X-ray photoelectron diffraction at high electron kinetic energies to the problem of structure determination in ultrathin epitaxial overlayers.
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High-resolution transfer printing on GaAs surfaces using alkane dithiol monolayers
Yueh-Lin Loo,Yueh-Lin Loo,Julia W. P. Hsu,R. L. Willett,Kirk W. Baldwin,Ken W. West,John A. Rogers +6 more
TL;DR: In this article, a transfer printing technique for directly patterning thin gold films onto GaAs surfaces is described, mediated by the presence of an alkane dithiol monolayer on the wafer surface.
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Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single-source precursor
TL;DR: In this paper, a two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS.
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Growth and characterization of (111) and (001) oriented MgO films on (001) GaAs
TL;DR: In this paper, the effects of substrate preparation on the structure and orientation of MgO films grown on (001) GaAs using pulsed laser deposition has been investigated, and the results showed that a preferential orientation within the plane of the substrate was obtained in cases where the surface oxide was only partially desorbed prior to growth.
References
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Journal ArticleDOI
Hartree-Slater subshell photoionization cross-sections at 1254 and 1487 eV.
TL;DR: In this article, the results of photoelectric cross-sections for the Kα lines of magnesium at 1254 eV and of aluminum at 1487 eV were given for Z values up to 96.
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Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
TL;DR: In this paper, a passivated nonradiative recombination center at the periphery of a GaAs/AlGaAs heterostructure bipolar transistor was proposed to increase the current gain of the device at low collector currents.
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Nearly ideal electronic properties of sulfide coated GaAs surfaces
TL;DR: In this paper, a robust covalently bonded sulfide layer was proposed to explain the favorable electronic properties of GaAs/GaAs interfaces, and the surface recombination velocity at the interface between Na2S⋅9H2O and GaAs began to approach that of the nearly ideal AlGaAs/GAAs interface.
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Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAs pn diodes
TL;DR: In this paper, the dark currentvoltage characteristics of GaAs pn homojunctions whose surfaces have been passivated with Na2S and (NH4)2S chemical treatments were investigated.