scispace - formally typeset
Journal ArticleDOI

ZnSe films: preparation and properties

Reads0
Chats0
TLDR
In this paper, ZnSe films were prepared by the hot wall evaporation technique onto glass, NaCl and KCl substrates at different substrate temperatures during deposition and the effect of deposition parameters on the grain growth, grain distribution and surface roughness were studied.
About
This article is published in Vacuum.The article was published on 1995-11-01. It has received 14 citations till now. The article focuses on the topics: Grain boundary & Grain growth.

read more

Citations
More filters
Journal ArticleDOI

Study of optical properties of thermally evaporated ZnSe thin films annealed at different pulsed laser powers

TL;DR: In this article, the optical properties of thermally evaporated and laser annealed ZnSe thin films were investigated in the spectral range 300-2500nm at room temperature.
Journal ArticleDOI

Effect of annealing on structural and optoelectronic properties of nanostructured ZnSe thin films

TL;DR: In this article, thin films of ZnSe were deposited on soda lime glass substrates by thermal evaporation and annealed in vacuum at various temperatures in the range of 100-300°C. Structural and optoelectronic properties of these films were investigated and compared with the available data.
Journal ArticleDOI

Significantly enhancing the dielectric constant and breakdown strength of linear dielectric polymers by utilizing ultralow loadings of nanofillers

TL;DR: In this article, the authors reported that the incorporation of ultralow amounts ( 87% at 800 MV m−1) represented the record values in linear dielectric polymer composites with low filler content (≤5 vol%).
Journal ArticleDOI

Properties of cu-doped low resistive ZnSe films deposited by two-sourced evaporation

TL;DR: In this paper, the optical properties of deposited and doped films, such as film thickness, absorption coefficient and optical band gap have been calculated from the normal transmission spectra in the range of 300-2200nm.
References
More filters
Journal ArticleDOI

The electrical properties of polycrystalline silicon films

TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
Journal ArticleDOI

Physics of Thin Films

Journal ArticleDOI

Transport properties of polycrystalline silicon films

TL;DR: In this article, the transport properties of polycrystalline silicon films are examined and interpreted in terms of a modified grain-boundary trapping model, based on the assumption of both a δ-shaped and a uniform energy distribution of interface states.
Related Papers (5)