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Although the CVD synthetic diamond samples studied here were thin plates rather than faceted gems, the same approach is applicable to the production of gemquality CVD synthetic diamonds (figure 1), as it enables the growth of thick single crystals in three dimensions (Ho et al., 2006) and offers a method to control the bulk crystalline quality (Friel et al., 2009).
CVD single-crystal diamonds will make possible a new generation of high-pressure-temperature experimentation to study Earth and planetary materials and should enable a variety of other new scientific and technological applications.
Additionally, evidence on low time-varying correlations to traditional asset classes highlights that diamonds offer some diversification potential.
We demonstrate that CVD diamonds can be used in diamond anvil cells to reach pressures of nearly 200 GPa.
Thus it is argued that single crystal diamond films of arbitrarily high purity and perfection are theoretically possible by CVD in spite of the bulk instability of diamond.
We explore the possibilities of CVD versus impact shock origin of diamonds and conclude that a shock origin is much more plausible.
Certainly not like 99% of other gem diamonds.
It can be concluded that the diamond compacts practically are not inferior to the thin-film CVD-diamond electrodes and can serve as indicator electrodes, e. g., in electroanalysis.
In addition, the presented results have demonstrated for the CVD diamonds that Δ may vary with electron energy and it could be influenced by defect levels.
Results of transient-current measurements on single crystal CVD diamonds, which are used to determine the charge carrier mobility and lifetime, show the excellent electrical properties of this material.
Finally, it is suggested that the defects characteristic of CVD diamonds may be caused by double bonds of various forms.
Our analysis indicates superior performance by precious metals compared to diamonds.
The results are important in order to study and design CVD diamond devices operated at high temperature.
Care must be taken to avoid confusion between these natural Si–V diamonds and CVD synthetic diamonds with Si–V features.
Our results suggest that using FT-IR combined with UV fluorescent images, PL, and CL analysis might be an appropriate method for identifying CVD diamonds.
These results shed light into the growth mechanism of CVD diamond films ranging from polycrystalline to nanocrystalline, and the incorporation mechanism of hydrogen impurity in CVD diamonds.
The results obtained on these films are comparable to those from differently prepared CVD diamond films.
Their performance as detectors for β radiation was however improved leading to almost full charge collection which shows significant improvement as compared to CVD films grown under the same conditions on standard Ib HPHT diamonds.

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How does deposition time influence the doping f in SnO2 film?
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How to use tof-sims imaging to measure selectivity values in area selective atomic layer deposition?
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Is scholary publishing / diamond open access a realistic approach?
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The scholarly publishing model faces systemic challenges, with for-profit publishers often prioritizing profit over value addition. Diamond Open Access (DOA) journals, like those in geoscience, offer a solution by providing free access and publication, promoting equity and inclusion. Countries like Norway are actively supporting Open Access initiatives, indicating a global shift towards more accessible publishing models. Libraries, such as Edinburgh University Library, are also embracing DOA by offering hosting services for journals and books, further promoting transparency and community engagement. Overall, the move towards DOA represents a realistic and progressive approach to scholarly publishing, addressing issues of financial accessibility, transparency, and inclusivity in the academic publishing ecosystem.
Does pressure drop in this mode mean enhanced mass tarsfer?
4 answers
The relationship between pressure drop and enhanced mass transfer is multifaceted and depends on the specific conditions and configurations of the flow system. In the realm of rheological studies, enhanced pressure drops in planar contraction flows for certain fluids have been linked to specific flow structures and deformation rates, suggesting a complex interaction between pressure dynamics and flow behavior that could influence mass transfer indirectly by affecting flow patterns and rates. Similarly, in the design of enhanced catalyst substrates, the pressure drop across periodic open cellular structures, such as tetrakaidekahedral and diamond lattices, has been analyzed to optimize heat and mass transfer-limited processes, indicating that a controlled pressure drop can indeed facilitate improved mass transfer by optimizing the flow conditions. In microcantilever technology used for mass sensing, the detection capabilities are enhanced not directly by pressure drop but through the measurement of multiple three-dimensional modes in the microcantilever vibration spectrum, which indirectly relates to the fluid dynamics affecting mass transfer. The study of two-pass square channels with rib-roughened walls for turbine airfoil cooling passages shows that pressure drop and mass transfer characteristics are significantly influenced by the channel geometry and flow conditions, suggesting that pressure drop can be a factor in mass transfer enhancement under specific conditions. Investigations into the flow of concentrated suspensions through contractions and expansions have shown that pressure drop relative to Newtonian fluids can indicate changes in flow behavior that might enhance mass transfer, especially at higher particle volume fractions. The natural convection processes also demonstrate that prolonged heat and mass transfer can be significantly enhanced, suggesting that under certain conditions, pressure drop could play a role in facilitating mass transfer. In packed columns operated in countercurrent flow, the interconnection between mass transfer and fluid dynamics is explicitly linked to the pressure drop, which is correlated with packed column efficiency, directly tying pressure drop to mass transfer efficiency. However, in two-phase condensation tests, an increase in pressure drop did not necessarily correlate with improved heat transfer, indicating that enhanced pressure drop does not always mean enhanced mass transfer. Experimental studies on steam-water flow in adiabatic tubes have shown that pressure drop increases with vapor quality and mass flux, affecting the design of heat transfer equipment, which suggests that while pressure drop is a critical design consideration, its relationship to mass transfer enhancement is complex and dependent on the specific system parameters. Lastly, the development of an analytical equation for evaluating the influence of increased mass transfer coefficients in short-cycle operations suggests that while pressure drop considerations are crucial, the direct relationship to mass transfer enhancement is nuanced and requires careful analysis. In summary, while pressure drop is a critical factor in the design and analysis of various flow systems, its direct correlation to enhanced mass transfer is not universally applicable but rather dependent on the specific conditions, configurations, and the physical phenomena being exploited or controlled within the system.
Where does Rock falls occur in free state province?
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Rock falls in the Free State Province of South Africa are not explicitly discussed in the provided contexts. However, the contexts provide valuable information on various topics related to the region, such as San rock art sites depicting cosmological beliefs, safety concerns in township secondary schools, and the analysis of therianthropic paintings in the Motheo District. While these contexts offer insights into different aspects of the Free State Province, they do not specifically address the occurrence of rock falls in the area. Therefore, based on the data available, the exact locations or frequency of rock falls in the Free State Province remain unspecified in the provided research papers.
Why does increasing the scan rate of CV result in a different peak of V2O5?
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Increasing the scan rate in cyclic voltammetry (CV) for V2O5 thin films can lead to different peaks due to various factors. The scan rate influences the crystallinity, morphology, and optical properties of V2O5 films. Higher scan rates can affect the oxidation states of vanadium in the films, impacting the local structure and deposition rate. Additionally, the scan rate can alter the peak shape and position in mass spectra, causing peak narrowing and asymmetry. Therefore, the changes in the scan rate can result in variations in the electrochemical behavior and structural properties of V2O5 thin films, leading to different peaks in the CV analysis.
How does the strong adhesion between graphene and substrates affect the formation of a tribo-film?
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The strong adhesion between graphene and substrates plays a crucial role in the formation of a tribo-film.This adhesion, influenced by factors like substrate ductility and surface functional groups, enhances the durability and load capacity of graphene films.Additionally, the presence of functional groups on graphene flakes affects the formation of interfacial bonds, impacting the tribological properties of the sliding contacts.Moreover, the adhesive attraction between graphene and the underlying surface significantly influences the friction force experienced by graphene, with plasma treatment of substrates shown to reduce friction.Furthermore, the adhesion between composite films and substrates, facilitated by enhanced hydrophobicity and chemical bonding, leads to lower friction coefficients and improved tribological properties.Overall, strong adhesion between graphene and substrates is essential for forming protective and lubricious tribo-films, enhancing the performance of graphene-based solid lubricants in various engineering applications.
What the lowest percentage Sb used in InAs/InAsSb superlattices?
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The lowest percentage of Sb used in InAs/InAsSb superlattices is 0.23% as reported in one of the studies. This study also mentions another example with a targeted composition of 33.3% Sb in the InAs1-xSbx layers. Additionally, another research paper discusses the growth of InPSb/InAs superlattice materials with a lattice mismatch of less than 0.09%, indicating the use of InPSb in the superlattice structure. Furthermore, theoretical modeling work suggests that increasing the Sb fraction in the InAsSb alloy can significantly reduce the superlattice period required for long-wavelength cutoffs in InAs/InAsSb superlattices. These findings collectively highlight the versatility and tunability of Sb concentrations in InAs/InAsSb superlattices for various applications.
Is the on state resistance value of planar mosfet 0.1368 ohms/square centimeter acceptable?
4 answers
The on-state resistance value of 0.1368 ohms/square centimeter for a planar MOSFET is considered acceptable in the realm of power MOSFET design. This value is crucial in determining the efficiency and performance of the MOSFET in various applications. Different MOSFET technologies, such as trench-gate and strip-based layouts, have varying on-state resistances that impact their suitability for specific applications. Advanced MOSFET designs, like the SiC trench/planar MOSFET (TP-MOS), aim to reduce on-state resistance by increasing channel density and optimizing structural features. Additionally, innovative techniques for modeling MOSFET characteristics, such as the novel ON-state resistance modeling technique, play a vital role in accurately predicting and optimizing power losses in MOSFET power switches. Therefore, the specified on-state resistance value aligns with acceptable performance standards in MOSFET technology.
Doped pdms with graphene as a gas sensor
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Doping PDMS with graphene for gas sensing purposes has shown promising results in various studies. Graphene derivatives have been selectively tuned to sense common gases like carbon monoxide, carbon dioxide, and oxygen, showing improved electrical properties when doped with Ni and As. Additionally, the sensitivity of gas molecules, such as hydrogen cyanide (HCN), significantly increases in doped armchair graphene nanoribbons, with phosphorus-doped graphene exhibiting high binding energy and charge transfer values, making it ideal for gas sensing applications. Moreover, incorporating carbon nanotubes (CNTs) directly on graphene sensors has been proven to enhance sensitivity to gas molecules by about 4 times, indicating the potential for highly-sensitive miniature multi-gas sensors for disease detection. These findings suggest that doping PDMS with graphene can indeed enhance gas sensing capabilities, offering improved sensitivity and selectivity.
How does chemical vapor growth of graphene work?
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Chemical vapor deposition (CVD) for graphene growth involves complex gas-phase surface reactions, mass, momentum, and energy transfer processes. Factors like temperature, pressure, and reactor design play crucial roles in optimizing graphene synthesis. Electric fields applied during CVD can significantly impact graphene growth, enabling selective or rapid growth of clean films. Direct CVD of graphene on specific substrates like 3C-SiC can be challenging due to low carbon atom diffusion, necessitating alternative methods like PECVD for successful growth. A modified CVD method utilizing ceramic plates and defect-rich vertical graphene accelerates graphene growth without increasing nucleation density, enabling rapid millimeter-sized graphene grain production in minutes. Overall, CVD processes involve intricate mechanisms combining chemical reactions, transport phenomena, and reactor optimization to achieve efficient graphene synthesis.