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Are transistors ohmic? 

Doping
Breakdown voltage
Ohmic contact
Field-effect transistor
Transistor

Answers from top 10 papers

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Papers (10)Insight
Open access•Book Chapter•DOI
Ohmic Contacts for High Power and High Temperature Microelectronics
Lilyana Kolaklieva, Roumen Kakanakov 
01 Dec 2009
20 Citations
Hence, the following requirements to the ohmic contacts are decisive for application in high power and high temperature microelectronics:
Journal Article•DOI
Low resistance Ohmic contact scheme (∼μΩ cm2) to p-InP
Moon-Ho Park, Li Wang, J. Y. Cheng, C. J. Palmstro 
06 Jan 1997-Applied Physics Letters
21 Citations
The Ohmic behavior can be rationalized by the formation of a heavily doped surface layer or a heterojunction.
Open access•Journal Article•DOI
AlN metal–semiconductor field-effect transistors using Si-ion implantation
Hironori Okumura, Hironori Okumura, Sami Suihkonen, Jori Lemettinen, Akira Uedono, Yuhao Zhang, Daniel Piedra, Tomas Palacios 
06 Mar 2018-Japanese Journal of Applied Physics
38 Citations
These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.
Journal Article•DOI
Ultrathin organic transistors for chemical sensing
Richard D. Yang, Thomas Gredig, Corneliu N. Colesniuc, Jeongwon Park, Ivan K. Schuller, William C. Trogler, Andrew C. Kummel 
26 Jun 2007-Applied Physics Letters
94 Citations
The enhanced response for the ultrathin transistors provides insight into the device physics.
Journal Article•DOI
Vertical organic transistors.
Björn Lüssem, Alrun A. Günther, Axel Fischer, Daniel Kasemann, Karl Leo 
14 Oct 2015-Journal of Physics: Condensed Matter
69 Citations
Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs.
Journal Article•DOI
Hysteresis caused by water molecules in carbon nanotube field-effect transistors
Woong Kim, Ali Javey, Ophir Vermesh, Qian Wang, Yiming Li, Hongjie Dai 
16 Jan 2003-Nano Letters
962 Citations
The results may have implications to field-effect transistors made from other chemically derived materials.
Journal Article•DOI
Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010)
Hironori Okumura, Hironori Okumura, Yuji Kato, Takayoshi Oshima, Tomas Palacios 
04 Mar 2019-Japanese Journal of Applied Physics
25 Citations
These results show the great potential of (AlGa)2O3 transistors for high-power applications.
Open access•Journal Article•DOI
The Multiple Facets of Ohmic Confinement in ASDEX
M. Bessenrodt-Weberpals, K. McCormick, F. X. Söldner, Friedrich E. Wagner, Hans-Stephan Bosch, O. Gehre, Ewald Müller, H. D. Murmann, J. Neuhauser, W. Poschenrieder, K.-H. Steuer, N. Tsois, Asdex Team 
01 Jan 1991-Nuclear Fusion
28 Citations
The two most prominent features of Ohmic confinement can therefore be explained on the basis of simple physical models.
Journal Article•DOI
Low temperature (<or=600 degrees C) poly-silicon thin film transistors
R. J. Stroh, F. Plais, T. Kretz, P. Legagneux, O. Huet, M. Magis, D. Pribat, N. Jiang, M. C. Hugon, B. Agius 
01 Feb 1994
9 Citations
It is shown that high electron mobilities and low off currents characterise the transistors fabricated with these techniques.
Journal Article•DOI
Si hetero-bipolar transistor with a fluorine-doped SiC emitter and a thin, highly doped epitaxial base
Toshihiro Sugii, T. Yamazaki, T. Ito 
01 Nov 1990-IEEE Transactions on Electron Devices
41 Citations
The results show the possibility of fabricating transistors with a very thin, highly doped base.

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