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Can we use pn junction as amplifier Why? 

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Proceedings ArticleDOI
R.L. Davies, F.E. Gentry 
01 Jan 1962
13 Citations
As a consequence, it is very desirable to design high voltage pn junction devices so that the electric field at the surface is significantly lower than that within the body of the device.
Thus a Diamond-GaAs pn junction can be formed by direct bonding.
Moreover, it can be easily extended to any multilayer PN junction device.
A diamond/GaAs pn junction can be formed by direct bonding.
By modifying the junction design, the width and position of the p‐n junction can be varied effectively.
The doping method we proposed in this paper can be applied to make a multifunctional homogeneous lateral p–n junction device.
The results support the formation of a pn like junction by ferroelectric oxides.
The pn junction formed in this way has strong rectifying characteristics.

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