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Can you replace a tube with a transistor?

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Proceedings Article•DOI Design methodology for Carbon Nanotube based circuits in the presence of metallic tubes Ashraf, Nain, Chrzanowska-Jeske, Narendra - Show less +3 more 01 Jan 2010 7 Citations	Different tube configurations in CNFET transistor like Parallel Tube (PT) and Transistor Stacking (TrS) can be used to trade-off yield for performance.
Journal Article•DOI Thermal performance analysis of a novel linear cavity receiver for parabolic trough solar collectors Xueling Li, Huawei Chang, Chen Duan, Yao Zheng, Shuiming Shu - Show less +4 more 01 Mar 2019-Applied Energy 43 Citations	Therefore, it can be used to replace the evacuated collector tube which has poor performance due to long-term operation.
Journal Article•DOI Junction Transistor Equivalent Circuits and Vacuum-Tube Analogy L. J. Giacoletto 01 Nov 1952 8 Citations	The junction transistor possesses operating characteristics that are closely comparable to a modified triode vacuum tube.
Journal Article•DOI A Note on the Analysis of Vacuum Tube and Transistor Circuits L. A. Zadeh 01 Aug 1953 7 Citations	It does not involve the replacement of the vacuum tube and the transistor by their equivalent circuits, and hence does not require a redrawing of the circuit diagram.
Proceedings Article•DOI Carbon nanotube transistor circuits: models and tools for design and performance optimization Hon-Sum Philip Wong, Jie Deng, Arash, Hazeghi, Tejas Krishnamohan, Gordon Wan - Show less +5 more 05 Nov 2006 23 Citations	It can be used for design of nanotube transistor circuits as well as to study performance benefits of the new transistor.
Journal Article•DOI The 2N3055: a case history J.N. Ellis, V.S. Osadchy - Show less +1 more 01 Nov 2001-IEEE Transactions on Electron Devices 7 Citations	We propose that this transistor be given a place in the archives of history, ranked alongside other famous devices of the 20th century such as the 300B tube.

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Related Questions

What transistor can replace the 12au7 tube?5 answersThe 12AU7 tube can be replaced by a transistor-based organic field effect transistor (OFTT) tube. This OFET tube consists of a grid, an insulation layer, an active layer, a source, and a drain. The active layer is made of a p-6p/C8-BTBT composite material, with a p-6p layer covering the insulation layer and a C8-BTBT layer crystallized on top to form an ordered crystal-shaped organic thin film. The fabrication method involves pre-processing an ITO substrate, spin-coating an insulation layer, evaporating the p-6p/C8-BTBT composite material, and fabricating the source and drain. This transistor-based OFET tube improves performance, reduces fabrication difficulty, and has wide application value in micro-electronics and applied electronics.

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