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We proposed a new microactuator to realize high track density of Hard Disk Drives (HDDs).
These transistors facilitate the development of very-high-speed, high-density ULSIs.
In application to both a. c.- and d. c.-motor drives, the fast switching capability of transistors can have advantages over thyristors, and we shall see it grow as an alternative power controller
They are prime candidates to combine the low cost, high capacity and random access features of ordinary magnetic hard disk drives with the low power draw, high data rate, small size, and nonvolatility of solid-state flash memories.
Hard disk drives must be designed to be resistant to operational and non-operational shock (Jayson et al.
Fabricated transistors have gains, ideality factors, and leakage currents comparable to those of bulk-devices.<<ETX>>
SiC unipolar transistors, such as JFETs and MESFETs have also a promising potential for digital integrated circuits operating at high temperature and/or in harsh environments.
Book ChapterDOI
Seungbum Hong, Yunseok Kim 
01 Jan 2014
As such, in a broad sense, most of the mechanically addressing storage devices such as hard disk drives (HDDs) and optical disk drives (ODDs) can be called probe storage devices.
It is shown that transistors having thin, lightly doped collector regions are particularly susceptible to avalanche injection, which suggests that some compromise may be necessary in the design of high-frequency power transistors.
They seem to have the best parameters among currently known polymorphic gates based on conventional transistors.
To the best of our knowledge, these are the most radiation-hard thin film transistors reported to date.
These properties give SiC transistors low conduction losses and fast switching capability.
We believe these are the fastest transistors of their kind in the world.
Moreover, the hard drives deteriorate gradually, but these models can not describe this gradual change precisely.
These results exhibit the promising potential of our transistors in artificial intelligence and healthcare systems.
Furthermore, the transistors have good output characteristics and can be easily modulated by the back gate.
The enhanced response for the ultrathin transistors provides insight into the device physics.
The results show the possibility of fabricating transistors with a very thin, highly doped base.
In conclusion, the power density of high-speed switched reluctance drives is comparable to that of conventional drives.

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