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Does Lowes sell transistors? 

Bipolar junction transistor
Heterojunction
Field-effect transistor
Transistor
Schottky diode

Answers from top 9 papers

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Papers (9)Insight
Open access•Journal Article•DOI
Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors
Elvedin Memisevic, Erik Lind, Lars-Erik Wernersson 
11 Sep 2014-Journal of Vacuum Science & Technology B
17 Citations
Finally, they introduce these steps in an existing transistor process and demonstrate vertical nanowire transistors with high performance.
Journal Article•DOI
Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack
Y. Chen, Douglas Macintyre, X. Cao, E. Boyd, David A. J. Moran, Helen McLelland, Martin Christopher Holland, C.R. Stanley, Iain G. Thayne, Stephen Thoms 
10 Dec 2003-Journal of Vacuum Science & Technology B
28 Citations
We believe these are the fastest transistors of their kind in the world.
Journal Article•DOI
High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition
Martin L. Green, D. Brasen, H. Temkin, R. D. Yadvish, T. Boone, Leonard C. Feldman, M. Geva, B. E. Spear 
01 Jan 1990-Thin Solid Films
17 Citations
These HJBTs show great promise as microwave transistors.
Journal Article•DOI
Si hetero-bipolar transistor with a fluorine-doped SiC emitter and a thin, highly doped epitaxial base
Toshihiro Sugii, T. Yamazaki, T. Ito 
01 Nov 1990-IEEE Transactions on Electron Devices
41 Citations
The results show the possibility of fabricating transistors with a very thin, highly doped base.
Journal Article•DOI
A tunneling field-effect transistor with 25 nm metallurgical channel length
Fu-Cheng Wang, W. E. Zhang, C. H. Yang, M. J. Yang, Brian R. Bennett, R. A. Wilson, D. R. Stone 
02 Jun 1997-Applied Physics Letters
9 Citations
The results demonstrate a new scheme of building nanometer-scale transistors.
Journal Article•DOI
Nanoheat Conduction Performance of Black Phosphorus Field-Effect Transistor
Faouzi Nasri, Mohamed Fadhel Ben Aissa, Hafedh Belmabrouk 
25 Apr 2017-IEEE Transactions on Electron Devices
11 Citations
This paper not only exposes various novel properties of BP transistors, but also demonstrates the great usefulness of the BP transistors.
Journal Article•DOI
Source–Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications
Kohei Hamaya, Kohei Hamaya, Yuichiro Ando, Taizoh Sadoh, Masanobu Miyao 
20 Jan 2011-Japanese Journal of Applied Physics
38 Citations
These two novel and interesting results are expected to form the basis of a key technology toward developing next-generation SiGe transistors.
Journal Article•DOI
High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors
R. S. Qhalid Fareed, Xiaobo Sharon Hu, A. Tarakji, J. Deng, R. Gaska, Michael Shur, M.A. Khan 
01 Apr 2005-Applied Physics Letters
24 Citations
The obtained results demonstrate a potential of this technique for development of the next-generation high-power transistors.
Journal Article•DOI
Very high-mobility organic single-crystal transistors with in-crystal conduction channels
Jun Takeya, Masakazu Yamagishi, Y. Tominari, R. Hirahara, Yasuhiro Nakazawa, Takeshi Nishikawa, T. Kawase, Tatsuya Shimoda, S. Ogawa 
09 Mar 2007-Applied Physics Letters
666 Citations
These are the highest values ever reported for organic transistors.

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