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We have demonstrated for the first time that the condensed phase of electrons and holes in germanium can be produced by carrier injection.
This new structure is expected to expedite the implementation of germanium as a channel material in next-generation nanoelectronic devices.
We show that compact germanium emitters can be obtained by processing germanium into tensile-strained microdisks.
These transistors exhibited ambipolar operation and an ON/OFF current ratio of ~104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time.
Our work may pave a way to develop low field magnetoresistance devices from germanium and silicon.
These bring the structure of germanium into better agreement with those of silicon and diamond.
These highly strained regions can be used to control the band structure of silicon-integrated germanium epilayers.
Thus, the proposed bandgap-engineered silicon-germanium biristor is preferable for low-voltage operations.

Related Questions

How does a germanium and silicon detector work?5 answersA germanium-silicon photoelectric detector works by utilizing the properties of germanium and silicon to detect incident light. The detector consists of various layers and electrodes that enable its functionality. The silicon waveguide is responsible for transmitting the incident light, while the silicon substrate receives the propagated light. The germanium absorption region, surrounded by epitaxial silicon and covered by an epitaxial silicon doped region, plays a crucial role in absorbing the incident light. The detector also includes adjustable gain peak and bandwidth gain assembly to optimize the detector's performance. By generating large electric fields in the avalanch region layer and small electric fields in the Ge absorption area layer, the detector reduces dark current and improves photoelectric conversion efficiency. Additionally, the detector can couple and superpose two beams of light, resulting in a more uniform light field distribution and improved bandwidth, saturation characteristic, and reliability. A vertical incidence type silicon-based germanium detector with a medium metasurface enhances absorption efficiency and responsivity without sacrificing high-speed performance.
How are gallium and germanium used in the semiconductor industry?5 answersGallium and germanium are both used in the semiconductor industry. Gallium compounds are used in semiconductor materials and optoelectronic devices such as laser diodes, light-emitting diodes, photodetectors, and solar cells. Gallium is also used in the production of high-powered radio frequency smartphones, which has led to an increase in its production. Germanium, on the other hand, is used as a substrate in the production of semiconductor devices. It is doped with specific dopants to create different functionalities in the devices. Additionally, germanium can be heavily doped to achieve a superconducting state, making it attractive for future information processing technologies like spintronics or quantum computing. Overall, gallium and germanium play important roles in the semiconductor industry, contributing to the development of various electronic devices and technologies.
How to make a computer out of transistors?6 answers
What material is a transistor made from?10 answers
What type of material is a transistor made of?8 answers
Where was the silicon transistor invented?7 answers

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