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Field-effect transistor

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Open access•Journal Article•DOI Novel 10-nm Gate Length MoS 2 Transistor Fabricated on Si Fin Substrate Yu Pan, Huaxiang Yin, Kailiang Huang, Zhaohao Zhang, Qingzhu Zhang, Kunpeng Jia, Zhenhua Wu, Kun Luo, Jiahan Yu, Junfeng Li, Wenwu Wang, Tianchun Ye - Show less +11 more 11 Apr 2019-IEEE Journal of the Electron Devices Society 12 Citations	This technology provides a promising approach for future CMOS scaling with large scale new 2-D material transistors.
Journal Article•DOI InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices Henrik Nilsson, Mingtang Deng, Philippe Caroff, Claes Thelander, Lars Samuelson, Lars-Erik Wernersson, Hongqi Xu - Show less +6 more 10 Jan 2011-IEEE Journal of Selected Topics in Quantum Electronics 55 Citations	The measurements also demonstrate the possibility of realizing ambipolar transistors using InSb nanowires.
Journal Article•DOI Si hetero-bipolar transistor with a fluorine-doped SiC emitter and a thin, highly doped epitaxial base Toshihiro Sugii, T. Yamazaki, T. Ito - Show less +2 more 01 Nov 1990-IEEE Transactions on Electron Devices 41 Citations	The results show the possibility of fabricating transistors with a very thin, highly doped base.
Journal Article•DOI A tunneling field-effect transistor with 25 nm metallurgical channel length Fu-Cheng Wang, W. E. Zhang, C. H. Yang, M. J. Yang, Brian R. Bennett, R. A. Wilson, D. R. Stone - Show less +6 more 02 Jun 1997-Applied Physics Letters 9 Citations	The results demonstrate a new scheme of building nanometer-scale transistors.
Journal Article•DOI Model for drain current RTS amplitude in small-area MOS transistors O. Roux dit Buisson, Gerard Ghibaudo, J. Brini - Show less +2 more 01 Sep 1992-Solid-state Electronics 66 Citations	RTS measurements performed on small-area MOS transistors partly support the validity of this model.
Journal Article•DOI Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect Zijun Chen, Yi Pei, S. Newman, David F. Brown, Roy B. Chung, Sarah L. Keller, Steven P. DenBaars, Shuji Nakamura, Umesh Mishra - Show less +8 more 01 May 2009-Applied Physics Letters 26 Citations	Thus, this device is promising for highly scaled transistors.
Journal Article•DOI Suppression of ambipolar leakage current in Schottky barrier MOSFET using gate engineering Sumit Kale, Pravin N. Kondekar - Show less +1 more 02 Sep 2015-Electronics Letters 22 Citations	The proposed device structure is especially beneficial for nanowire-based transistors.

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How does ionized oxygen vacancies attracted to the SiO2/β-Ga2O3 interface?

Ionized oxygen vacancies are attracted to the SiO2/β-Ga2O3 interface due to the thermodynamic justification of the scavenging process, as supported by first-principles calculations. The formation energy of oxygen vacancies is smaller in the SiO2 interlayer compared to the HfO2 layer, leading to their migration to minimize energy. At the interface, the presence of oxygen vacancies in the outermost TiO2 plane of BaTiO3 and Si-O-Ti bonds creates a polar region with localized positive and negative charges, promoting the formation of an electron gas in oxygen-deficient BaTiO3 near the interface. Additionally, in β-Ga2O3, oxygen vacancies in their fully charged states induce extra emission peaks in the photoluminescence spectrum, demonstrating their impact on the material's optical properties.How are 3D primitive cubic type structures constructed?

3D primitive cubic type structures can be constructed through various methods outlined in the provided research contexts. One approach involves the spontaneous assembly of a primitive cubic lattice from intersecting arrays of cylindrical waveguides, generated using incandescent light bulbs, showcasing potential for nonlinear photonic lattices. Another method discusses the formation of bicontinuous cubic phases templating nanoporous materials with a single primitive morphology, achieved by incorporating specific surfactants into lipid mixtures under controlled hydration conditions. Additionally, the construction of primitive cubic networks for arbitrary tilings of 3D space using regular hexagonal prisms is explored and classified, highlighting the versatility of such structures. These diverse methodologies demonstrate the flexibility and applicability of constructing 3D primitive cubic type structures in various scientific domains.What are the sensors used to measure dissolved oxygen?

Various sensors are utilized to measure dissolved oxygen (DO) levels. These include potentiometric solid-state semiconductor sensors like SnO2-gate field-effect transistors (FETs), fluorescence quenching-based sensors employing fluorescence lifetime detection, time-domain lifetime measurement sensors with oxygen sensing films, phosphorescence quenching-based intelligent sensors on optofluidic platforms for continuous DO measurement, and microelectrode array (MEA) sensors with gold electrodes for electrochemical testing in solutions like potassium ferricyanide. Each sensor type offers unique advantages such as high sensitivity, stability, accuracy, and the ability to provide continuous, real-time measurements, catering to diverse applications in industrial, biomedical, and environmental fields.